Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same

Abstract

Abstract A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.

Inventors

• 👤 Jinsho Matsuyama
• 👤 Toshimitsu Kariya
• 👤 Yasushi Fujioka
• 👤 Tetsuya Takei
• 👤 Katsumi Nakagawa
• 👤 Masahiro Kanai
• 👤 Hiroshi Echizen

Bibliographic Details