US4930442A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave plasma CVD apparatus having an improved microwave transmissive window
Assignee: Canon Inc
•
Filing: 1988-03-25
•
Granted: 1990-06-05
•
Expires: 2008-03-25
Abstract
Abstract An improved microwave plasma CVD apparatus for the formation of a thin film on a substrate by exciting glow discharge in a reaction chamber, comprising a substantially enclosed reaction chamber to receive the substrate, a means for supplying a film forming raw material gas into said reaction chamber and a means for introducing microwave energy into said reaction chamber, characterized in that said means for introducing microwave energy retains the gas atmosphere in said reaction chamber and as well as is constituted by a microwave transmissive material capable of introducing the microwave energy, said material being alumina ceramics containing glassy component such as SiO 2 , CaO and MgO in an amount of 1 wt. % to 10 wt. % and substantially as other component α-alumina. In the improved apparatus, the microwave transmissive window can be repeatedly used without being damaged for a long period of time and a desirable functional deposited film may be mass-produced at a high deposition rate.
Inventors
- 👤 Shigehira Iida
- 👤 Takayoshi Arai
- 👤 Junichiro Hashizume
- 👤 Tetsuya Takei
- 👤 Keishi Saitoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:05
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
231 words
An apparatus for the formation of a functional silicon-containing deposited film on a plurality of cylindrical substrate by means of a microwave plasma chemical vapor deposition process conducted in a substantially enclosed deposition chamber, said deposition chamber being cylindrical and comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said microwave introducing window being formed of an alumina ceramic consisting of α-alumina and from 1 to 8 wt.% of one or more glassy component selected from the group consisting of SiO 2 , CaO, and MgO, said cylindrical deposition chamber having a discharge space with a plurality of rotatable cylindrical substrate holders circumferentially positioned around a longitudinal axis of said discharge space, each rotatable cylindrical substrate holder provided with an electric heater therein, each said rotatable cylindrical substrate holder capable of having mounted thereon one of said cylindrical substrates, said rotatable cylindrical substrate holders being arranged at intervals said cylindrical deposition chamber also being provided with a plurality of gas feed pipes for supplying a film-forming raw material gas into said discharge space and means for evacuating said cylindrical deposition chamber, each said gas feed pipe being arranged between two of said rotatable cylindrical substrate holders so as to permit the film-forming raw material gas to be supplied into said discharge space.
Claim 2
Independent Claim
231 words
An apparatus for the formation of a functional silicon-containing deposited film on a plurality of cylindrical substrate by means of a microwave plasma chemical vapor deposition process conducted in a substantially enclosed deposition chamber, said deposition chamber being cylindrical and comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said microwave introducing window being formed of an alumina ceramic consisting of α-alumina and from 1 to 8 wt.% of one or more glassy component selected from the group consisting of SiO 2 , CaO, and MgO, said cylindrical deposition chamber having a discharge space with a plurality of rotatable cylindrical substrate holders circumferentially positioned around a longitudinal axis of said discharge space, each rotatable cylindrical substrate holder provided with an electric heater therein, each said rotatable cylindrical substrate holder capable of having mounted thereon one of said cylindrical substrates, said rotatable cylindrical substrate holders being arranged at intervals said cylindrical deposition chamber also being provided with a plurality of gas feed pipes for supplying a film-forming raw material gas into said discharge space and means for evacuating said cylindrical deposition chamber, each said gas feed pipe being arranged between two of said rotatable cylindrical substrate holders so as to permit the film-forming raw material gas to be supplied into said discharge space.
Claim 3
Dependent Claim
21 words
The apparatus according to claim 1, wherein each of said plurality of gas feed pipes is of a microwave transmissive material.
Claim 4
Dependent Claim
144 words
A microwave plasma chemical vapor deposition process for forming an amorphous silicon-containing semiconductor film on a plurality of cylindrical substrates suitable for use in an electrophotographic photosensitive device in the apparatus of claim 2, which comprises the steps of: (a) placing one of said cylindrical substrates on each of said cylindrical substrate holders, (b) evacuating said cylindrical deposition chamber to bring the interior of said chamber to a predetermined vacuum, (c) supplying a film-forming raw material gas through said plurality of gas feed pipes into said discharge space while rotating said cylindrical substrate holders and maintaining said cylindrical substrates at a predetermined temperature, (d) introducing a microwave energy through said microwave introducing window into said discharge space to cause glow discharge, and (e) maintaining said glow discharge for a desired period of time to thereby form a functional deposited film on said cylindrical substrates.
References Cited (Backward Citations)
JPS548363A
Cited
US4609428A
Cited
US4720471A
Cited
US4735926A
Cited
JPS6244577A
Cited
US4729341A
Cited
JPS6350479A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-04 | 1993-12-04 | 1994-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-04 | 1997-12-04 | 1998-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-04 | 2001-12-04 | 2002-06-05 | $7700.00 | Window Closed / Lapsed |