US5707746A
Expired / Lapsed
US
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Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
Assignee: Sharp Corp
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Filing: 1993-09-21
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Granted: 1998-01-13
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Expires: 2013-09-21
Abstract
Abstract A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6×10 -6 deg -1 or more or having a distortion point of 850° C. or lower.
Inventors
- 👤 Yoshihumi Yaoi
- 👤 Yoko Katsuya
- 👤 Shuhei Tsuchimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:16
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6758; H10P; H10P95/00; H10P95/94; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
83 words
A thin film semiconductor device, comprising: an insulating substrate formed of an insulating material having a thermal expansion coefficient of 2.6×10 -6 deg. -1 or more, a thin film transistor provided on the insulating substrate, the thin film transistor including a silicon layer as an active layer; and a silicon nitride layer formed on the silicon layer, the silicon nitride layer including hydrogen, wherein the silicon layer is passivated with hydrogen diffused from the silicon nitride layer by annealing the silicon nitride layer.
Claim 2
Dependent Claim
83 words
A thin film semiconductor device, comprising: an insulating substrate formed of an insulating material having a thermal expansion coefficient of 2.6×10 -6 deg. -1 or more, a thin film transistor provided on the insulating substrate, the thin film transistor including a silicon layer as an active layer; and a silicon nitride layer formed on the silicon layer, the silicon nitride layer including hydrogen, wherein the silicon layer is passivated with hydrogen diffused from the silicon nitride layer by annealing the silicon nitride layer.
Claim 3
Dependent Claim
18 words
A thin film semiconductor device according to claim 1, wherein the insulating substrate is formed of aluminoborosilicate glass.
Claim 4
Dependent Claim
43 words
A thin film semiconductor device according to claim 2, wherein the insulating substrate of aluminoborosilicate glass has a thermal expansion coefficient of 4×10 -6 deg. -1 , the silicon layer is a polysilicon layer and the silicon nitride layer has a compressive stress.
Claim 5
Dependent Claim
17 words
A thin film semiconductor device according to claim 1, wherein the silicon layer is formed of polysilicon.
Claim 6
Dependent Claim
16 words
A thin film device according to claim 1, wherein the insulating substrate is formed of glass.
Claim 7
Dependent Claim
17 words
A thin film semiconductor device according to claim 1, wherein the silicon nitride layer has compressive stress.
Claim 8
Dependent Claim
27 words
A thin film semiconductor device according to claim 1, wherein the hydrogen in the silicon nitride layer is present in an atomic percent of 1% to 30%.
Claim 9
Dependent Claim
80 words
A thin film semiconductor device, comprising: an insulating substrate formed of an insulating material having a distortion point of 850° C. or lower, a thin film transistor provided on the insulating substrate, the thin film transistor including a silicon layer as an active layer; and a silicon nitride layer formed on the silicon layer, the silicon nitride layer including hydrogen, wherein the silicon layer is passivated with hydrogen diffused from the silicon nitride layer by annealing the silicone nitride layer.
Claim 10
Dependent Claim
80 words
A thin film semiconductor device, comprising: an insulating substrate formed of an insulating material having a distortion point of 850° C. or lower, a thin film transistor provided on the insulating substrate, the thin film transistor including a silicon layer as an active layer; and a silicon nitride layer formed on the silicon layer, the silicon nitride layer including hydrogen, wherein the silicon layer is passivated with hydrogen diffused from the silicon nitride layer by annealing the silicone nitride layer.
Claim 11
Dependent Claim
18 words
A thin film semiconductor device according to claim 8, wherein the insulating substrate is formed of aluminoborosilicate glass.
Claim 12
Dependent Claim
39 words
A thin film semiconductor device according to claim 9, wherein the insulating substrate of aluminoborosilicate glass has a distortion point of 670° C., the silicon layer is a polysilicon layer and the silicon nitride layer has a compressive stress.
Claim 13
Dependent Claim
17 words
A thin film semiconductor device according to claim 8, wherein the silicon layer is formed of polysilicon.
Claim 14
Dependent Claim
16 words
A thin film device according to claim 8, wherein the insulating substrate is formed of glass.
Claim 15
Dependent Claim
17 words
A thin film semiconductor device according to claim 8, wherein the silicon nitride layer has compressive stress.
Claim 16
Dependent Claim
27 words
A thin film semiconductor device according to claim 8, wherein the hydrogen in the silicon nitride layer is present in an atomic percent of 1% to 30%.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-01-12 | 2001-07-14 | 2002-01-13 | $2000.00 | Window Closed / Lapsed |
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