US5683547A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Processing method and apparatus using focused energy beam
Assignee: Hitachi Ltd
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Filing: 1994-07-12
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Granted: 1997-11-04
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Expires: 2014-07-12
Abstract
Abstract A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.
Inventors
- 👤 Junzou Azuma
- 👤 Fumikazu Itoh
- 👤 Satoshi Haraichi
- 👤 Akira Shimase
- 👤 Junichi Mori
- 👤 Takahiko Takahashi
- 👤 Emiko Uda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 22:18
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/3056; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10W20/056; H10W20/057; H01J2237/00; H01J2237/006; H01J2237/30; H01J2237/317; H01J2237/3174; H01J2237/31742; H01J2237/31744
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
110 words
A processing method using a focused energy beam for locally etching a workpiece, comprising the steps of: introducing mixed reactant gases comprising a reactive etching gas and a CVD gas into a processing chamber containing said workpiece; irradiating said focused ion energy beam onto a local portion of said workpiece; and, forming an etching hole by etch-reacting said reactive etching gas on said workpiece at said local portion with said irradiated focused energy beam while depositing a film on a sidewall of said etching hole by decomposing said CVD gas with said irradiated focused ion beam, wherein the rate of said depositing is larger than the rate of said etch-reacting.
Claim 2
Dependent Claim
110 words
A processing method using a focused energy beam for locally etching a workpiece, comprising the steps of: introducing mixed reactant gases comprising a reactive etching gas and a CVD gas into a processing chamber containing said workpiece; irradiating said focused ion energy beam onto a local portion of said workpiece; and, forming an etching hole by etch-reacting said reactive etching gas on said workpiece at said local portion with said irradiated focused energy beam while depositing a film on a sidewall of said etching hole by decomposing said CVD gas with said irradiated focused ion beam, wherein the rate of said depositing is larger than the rate of said etch-reacting.
Claim 3
Dependent Claim
38 words
A processing method using a focused ion beam as claimed in claim 1, wherein said film deposited on said sidewall of said etching hole exhibits etch-reacting of said reactive etching gas on said sidewall of said etching hole.
Claim 4
Dependent Claim
63 words
A processing method using a focused ion beam as claimed in claim 1, wherein said workpiece is a multilayer device composed of an insulating layer and a metal wiring layer, and wherein each gas of said mixed reactant gases reacts with one of said layers constituting said workpiece to cause etching of or deposition on said layer in the focused beam irradiation area.
Claim 5
Dependent Claim
148 words
A processing method using a focused ion beam for etching a multilayer device having a metal wiring layer located under an insulating layer, said method comprising the steps of: introducing mixed reactant gases comprising a first reactive etching gas for said insulating layer and a second reactive etching gas for said second metal wiring layer into a processing chamber containing said multilayer device, said first reactive etching gas being a fluorine gas and said second reactive etching gas being a chlorine gas; irradiating said focused ion beam onto a local portion of a surface of said multilayer device in the presence of said mixed reactant gases; and, forming an etching hole by etch-reacting said mixed reactant gases on said local portion of said multilayer sample with said irradiated focused ion beam without changing between the introduction of said first reactive etching gas and said second reactive etching gas.
Claim 6
Dependent Claim
148 words
A processing method using a focused ion beam for etching a multilayer device having a metal wiring layer located under an insulating layer, said method comprising the steps of: introducing mixed reactant gases comprising a first reactive etching gas for said insulating layer and a second reactive etching gas for said second metal wiring layer into a processing chamber containing said multilayer device, said first reactive etching gas being a fluorine gas and said second reactive etching gas being a chlorine gas; irradiating said focused ion beam onto a local portion of a surface of said multilayer device in the presence of said mixed reactant gases; and, forming an etching hole by etch-reacting said mixed reactant gases on said local portion of said multilayer sample with said irradiated focused ion beam without changing between the introduction of said first reactive etching gas and said second reactive etching gas.
Claim 7
Dependent Claim
112 words
A processing method using a focused ion beam for etching a multi-layer device having a metal wiring layer located under an insulating layer as claimed in claim 4, wherein said mixed reactant gases comprise at least one spontaneous gas and one nonspontaneous gas, and wherein said gases are reactive only at said local portion of said multilayer device where said focused ion beam is irradiated, and wherein by controlling the temperature of said multilayer device and by controlling the mixture ratio of said spontaneous and nonspontaneous etching gas and irradiating said focused ion beam onto said local portion of said multilayer device, the side etching amount at said local portion is controlled.
References Cited (Backward Citations)
US4380488A
Cited
US4503329A
Cited
JPS59107934A
Cited
JPS59151427A
Cited
US4609809B1
Cited
US4609809A
Cited
US4529475A
Cited
JPS60260131A
Cited
US4930439A
Cited
US4698236A
Cited
JPS61123841A
Cited
JPS6257220A
Cited
US4617087A
Cited
US4868068A
Cited
JPS635531A
Cited
US4851097A
Cited
JPS6442822A
Cited
US5298112A
Cited
JPS6489912A
Cited
US4959245A
Cited
JPH01129256A
Cited
US4874460A
Cited
JPH01169858A
Cited
JPH01169860A
Cited
US5055696A
Cited
US4889609A
Cited
US4994140A
Cited
JPH04350931A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-03 | 2001-05-05 | 2001-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-03 | 2005-05-05 | 2005-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-03 | 2009-05-05 | 2009-11-04 | $7700.00 | Window Closed / Lapsed |