Processing of semiconductor substrate

Abstract

Abstract PURPOSE:To easily obtain a perpendicular and deep groove in a semiconductor substrate by supplying a gas or a radical whose reactivity with an upper layer film thereof is sufficiently low and whose reactivity with the semiconductor substrate itself is high when etching the semiconductor substrate which is exposed to an opening by means of a focused ion beam. CONSTITUTION:After forming an opening 3 in an upper layer film 2 formed onto a semiconductor substrate 1, a focused ion beam is emanated thereupon while supplying a gas or a radical whose reactivity with the upper layer film 2 is low and whose reactivity with the semiconductor substrate 1 is high. The low reactivity causes the upper layer film 2 to be unetched and become a masking layer, while it causes the semiconductor substrate 1 to be etched actively. According to the constitution, a deeply etched groove can easily be formed without loosing the perpendicularity of the lateral wall.

Inventors

• 👤 Nobukazu Takado
• 👤 Kiyoshi Asakawa

Bibliographic Details