Cleaning and flattening of si surface and apparatus therefor

Abstract

Abstract PURPOSE:To prevent the surface of Si substrate from forming an oxide film thereon by a method wherein each single atomic layer on the surface of Si is etched by processing such as heating the Si substrate or irradiating the surface of Si substrate with ultraviolet rays or laser beam in the gas atmosphere of specific silicon compounds. CONSTITUTION:SiCl4, SiHCl3, SiH2Cl2, SiH3Cl2, SiH3Cl or mixed gas thereof or said gas is mixed with Cl2 gas or HCl gas to produce gaseous atmosphere wherein an Si substrate 12 is heated or the surface thereof is irradiated with ultraviolet ray 33 or laser beam 30 or processed by the combination of said processes. The Si surface 12 is reacted to each gas by the processing such as heating the substrate 12 and irradiating it with ultraviolet rays 33 and laser beam 30. Through these procedures, each gas of silicon compounds can be used to flatten the etching surface subject to no surface irregularities such as those in case of etching process using each gas of HCl, Cl2.

Inventors

• 👤 Nahomi Takasaki
• 👤 高崎　なほみ

Bibliographic Details