US5679610A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of planarizing a semiconductor workpiece surface
Assignee: Toshiba Corp
•
Filing: 1994-12-15
•
Granted: 1997-10-21
•
Expires: 2014-12-15
Abstract
Abstract The present invention relates to a simple, low cost planarization technique whereby physical pressure is used to planarize the surface of a semiconductor device. The method of the present invention planarizes a semiconductor workpiece surface and results in an increase in the productivity of the processing steps that follow. In effect, the present invention applies physical pressure to flatten the surface layers of a semiconductor workpiece. The present invention is particularly adapted for use in planarizing surface layers made of plastic materials.
Inventors
- 👤 Tetsuo Matsuda
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:14
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
67 words
A semiconductor workpiece processing method, comprising: providing a semiconductor workpiece; forming a layer of material on said semiconductor workpiece; and contacting a surface of said layer of material with a plate having apertures formed therein to apply pressure so as to planarize said surface of said layer of material, wherein excess material flows through said apertures when said plate contacts said surface of said layer of material.
Claim 2
Dependent Claim
67 words
A semiconductor workpiece processing method, comprising: providing a semiconductor workpiece; forming a layer of material on said semiconductor workpiece; and contacting a surface of said layer of material with a plate having apertures formed therein to apply pressure so as to planarize said surface of said layer of material, wherein excess material flows through said apertures when said plate contacts said surface of said layer of material.
Claim 3
Dependent Claim
29 words
The semiconductor workpiece processing method of clam 1, further comprising the step of heating said layer of material while said plate contacts said surface of said layer of material.
Claim 4
Dependent Claim
29 words
The semiconductor workpiece processing method of clam 1, further comprising the step of heating said layer of material while said plate contacts said surface of said layer of material.
Claim 5
Dependent Claim
43 words
The semiconductor workpiece processing method of claim 1, further comprising the steps of pre-heating said plate before said plate contacts said surface of said layer of material, and further heating said plate while said plate contacts said surface of said layer of material.
Claim 6
Dependent Claim
31 words
The semiconductor workpiece processing method of claim 1, wherein a surface of said plate which contacts said surface of said layer of material is coated with a layer of non-stick material.
Claim 7
Dependent Claim
16 words
The semiconductor workpiece processing method of claim 4, wherein said non-stick material is a silicone material.
Claim 8
Dependent Claim
16 words
The semiconductor workpiece processing method of claim 4, wherein said non-stick material is a fluorocarbon material.
Claim 9
Dependent Claim
19 words
The semiconductor workpiece processing method of claim 1, wherein said layer of material is comprised of a dielectric material.
Claim 10
Dependent Claim
21 words
The semiconductor workpiece processing method of claim 1, wherein said layer of material is comprised of a material containing silicon dioxide.
Claim 11
Dependent Claim
16 words
The semiconductor workpiece processing method of claim 1 wherein said layer of material comprises spin-on-glass (SOG).
Claim 12
Dependent Claim
21 words
The semiconductor workpiece processing method of claim 1, wherein said layer of material is comprised of a doped silicon dioxide material.
Claim 13
Dependent Claim
19 words
The semiconductor workpiece processing method of claim 10, wherein said doped silicon dioxide material comprises phosphorous silicate glass (PSG).
Claim 14
Dependent Claim
19 words
The semiconductor workpiece processing method of claim 10, wherein said doped silicon dioxide material comprises borophosphorous silicate glass (BPSG).
Claim 15
Dependent Claim
19 words
The semiconductor workpiece processing method of claim 1, wherein said layer of material is comprised of a field oxide.
Claim 16
Dependent Claim
19 words
The semiconductor workpiece processing method of claim 1, wherein said layer of material is comprised of a metallic material.
Claim 17
Dependent Claim
19 words
The semiconductor workpiece processing method of claim 1, wherein said layer of material is comprised of a semiconductor material.
Claim 18
Dependent Claim
15 words
The semiconductor workpiece processing method of claim 1, wherein said plate is a metallic plate.
Claim 19
Independent Claim
79 words
A method of planarizing a semiconductor workpiece surface comprising: providing a plate having apertures formed therein; pre-heating said plate to an elevated temperature; contacting said semiconductor workpiece surface with said heated plate; and further heating said plate to a further elevated temperature while said plate contacts said semiconductor workpiece surface so as to planarize said semiconductor workpiece surface, wherein excess surface material of said semiconductor workpiece surface flows through said apertures when said plate contacts said semiconductor workpiece surface.
Claim 20
Independent Claim
79 words
A method of planarizing a semiconductor workpiece surface comprising: providing a plate having apertures formed therein; pre-heating said plate to an elevated temperature; contacting said semiconductor workpiece surface with said heated plate; and further heating said plate to a further elevated temperature while said plate contacts said semiconductor workpiece surface so as to planarize said semiconductor workpiece surface, wherein excess surface material of said semiconductor workpiece surface flows through said apertures when said plate contacts said semiconductor workpiece surface.
Claim 21
Dependent Claim
31 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein a surface of said plate which contacts said semiconductor workpiece surface is coated with a layer of non-stick material.
Claim 22
Dependent Claim
19 words
The method of planarizing a semiconductor workpiece surface of claim 18, wherein said non-stick material comprises a silicone material.
Claim 23
Dependent Claim
19 words
The method of planarizing a semiconductor workpiece surface of claim 18, wherein said non-stick material comprises a fluorocarbon material.
Claim 24
Dependent Claim
22 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said semiconductor workpiece surface is comprised of a dielectric material.
Claim 25
Dependent Claim
24 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said semiconductor workpiece surface is comprised of a material containing silicon dioxide.
Claim 26
Dependent Claim
19 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said semiconductor workpiece surface comprises spin-on-glass (SOG).
Claim 27
Dependent Claim
24 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said semiconductor workpiece surface is comprised of a doped silicon dioxide material.
Claim 28
Dependent Claim
22 words
The method of planarizing a semiconductor workpiece surface of claim 24, wherein said doped silicon dioxide material comprises phosphorous silicate glass (PSG).
Claim 29
Dependent Claim
22 words
The method of planarizing a semiconductor workpiece surface of claim 24, wherein said doped silicon dioxide material comprises borophosphorous silicate glass (BPSG).
Claim 30
Dependent Claim
22 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said semiconductor workpiece surface is comprised of a field oxide.
Claim 31
Dependent Claim
22 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said semiconductor workpiece surface is comprised of a metallic material.
Claim 32
Dependent Claim
22 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said semiconductor workpiece surface is comprised of a semiconductor material.
Claim 33
Dependent Claim
24 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said heated plate is moved into contact with said semiconductor workpiece surface.
Claim 34
Dependent Claim
18 words
The method of planarizing a semiconductor workpiece surface of claim 17, wherein said plate is a metallic plate.
References Cited (Backward Citations)
US4609139A
Cited
JPS6246533A
Cited
US4676868A
Cited
US4963221A
Cited
US4758533A
Cited
US4909693A
Cited
US5078820A
Cited
US5034801A
Cited
US5580827A
Cited
US5164323A
Cited
US5104828A
Cited
US5257478A
Cited
US5173766A
Cited
JPH04111454A
Cited
US5106779A
Cited
US5285102A
Cited
US5371943A
Cited
US5286329A
Cited
US5318663A
Cited
US5434107A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-20 | 2001-04-21 | 2001-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-20 | 2005-04-21 | 2005-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-20 | 2009-04-21 | 2009-10-21 | $7700.00 | Window Closed / Lapsed |