US5106779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for widening the laser planarization process window for metalized films on semiconductor wafers
Assignee: Micron Technology Inc
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Filing: 1990-12-06
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Granted: 1992-04-21
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Expires: 2010-12-06
Abstract
Abstract The invention relates to taking advantage of increasing the boiling point of a material by increasing pressure within the processing chamber, which will then push the optical ablation limit to a higher optical fluence (laser intensity). A method in accordance with the invention of planarizing a metallic film on a semiconductor wafer employing laser energy comprises: a) injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and b) selectively applying laser energy to the metallic film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr. Increasing pressure within the chamber in this manner will raise the boiling temperature of the particular metallic film without a corresponding significant increase in the melting temperature of the metallic film.
Inventors
- 👤 Chang Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:08
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/04; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; Y; Y10; Y10S; Y10S148/00; Y10S148/134; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
64 words
A method of planarizing a metallic film on a semiconductor wafer using laser energy, the method comprising: injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and selectively applying laser energy to the metallic film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr.
Claim 2
Independent Claim
64 words
A method of planarizing a metallic film on a semiconductor wafer using laser energy, the method comprising: injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and selectively applying laser energy to the metallic film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr.
Claim 3
Dependent Claim
30 words
The method of planarizing a metallic film of claim 1 wherein the inert gas is selected from the group consisting of Ar, N 2 , and Kr, or mixtures thereof.
Claim 4
Dependent Claim
32 words
The method of planarizing a metallic film of claim 1 comprising injecting the inert gas into the laser planarization chamber to provide a pressure within the chamber which is approximately one atmosphere.
Claim 5
Dependent Claim
30 words
The method of planarizing a metallic film of claim 3 wherein the inert gas is selected from the group consisting of Ar, N 2 , and Kr, or mixtures thereof.
Claim 6
Independent Claim
66 words
A method of planarizing an aluminum containing film on a semiconductor wafer using laser energy, the method comprising: injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and selectively applying laser energy to the aluminum containing film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr.
Claim 7
Independent Claim
66 words
A method of planarizing an aluminum containing film on a semiconductor wafer using laser energy, the method comprising: injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and selectively applying laser energy to the aluminum containing film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr.
Claim 8
Dependent Claim
31 words
The method of planarizing an aluminum containing film of claim 5 wherein the inert gas is selected from the group consisting of Ar, N 2 , and Kr, or mixtures thereof.
Claim 9
Dependent Claim
33 words
The method of planarizing an aluminum containing film of claim 5 comprising injecting the inert gas into the laser planarization chamber to provide a pressure within the chamber which is approximately one atmosphere.
Claim 10
Dependent Claim
31 words
The method of planarizing an aluminum containing film of claim 7 wherein the inert gas is selected from the group consisting of Ar, N 2 , and Kr, or mixtures thereof.
Claim 11
Independent Claim
63 words
A method of widening the laser planarization process window for planarizing aluminum containing films comprising: injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and selectively applying laser energy to the aluminum containing film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr.
Claim 12
Independent Claim
63 words
A method of widening the laser planarization process window for planarizing aluminum containing films comprising: injecting an inert gas into a laser planarization chamber to provide a desired pressure within the chamber which is above 1 Torr; and selectively applying laser energy to the aluminum containing film within the chamber containing the inert gas and maintained at a pressure greater than 1 Torr.
Claim 13
Dependent Claim
30 words
The method of widening the process window of claim 9 wherein the inert gas is selected from the group consisting of Ar, N 2 , and Kr, or mixtures thereof.
Claim 14
Dependent Claim
32 words
The method of widening the process window of claim 9 comprising injecting the inert gas into the laser planarization chamber to provide a pressure within the chamber which is approximately one atmosphere.
Claim 15
Dependent Claim
30 words
The method of widening the process window of claim 11 wherein the inert gas is selected from the group consisting of Ar, N 2 , and Kr, or mixtures thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-04-21 | 1995-10-21 | 1996-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-21 | 1999-10-21 | 2000-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-21 | 2003-10-21 | 2004-04-21 | $7700.00 | Window Closed / Lapsed |