Patent FR1105764A successfully refreshed from Google Patents.
Patent US5679483A successfully refreshed from Google Patents.
US5679483A
Expired / Lapsed
US
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Embedded phase shifting photomasks and method for manufacturing same
Assignee: Qimonda AG
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Filing: 1994-12-20
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Granted: 1997-10-21
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Expires: 2014-12-20
Abstract
Abstract The present invention phase shifting photomask is fabricated by means of a structured modification to the surface of a mask blank suitable for photolithography. Ion implantation, diffusion or similar processes are used to alter the optical properties of selected areas of a mask blank in such a way that these areas modify the intensity and phase of optical radiation transmitted through the processed areas of the mask blank substrate. The present invention provides the intended phase and intensity modulation by modification of a surface layer or other layer which is close to the surface of the mask blank. This leaves the actual surface of the mask blank intact and smooth without chemical changes to the surface of the mask blank. In this way optical radiation is not scattered on the borders of different materials and unwanted particulates will have a lower chance of adhering to a smooth surface with little or no topography. Use of photomasks manufactured in accordance with the present invention method enhances the resolution and process window, for example, depth of focus and/or exposure latitude of the lithographic process.
Inventors
- 👤 Wilhelm Maurer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:26
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
146 words
A method of producing a phase shifting photomask for use in optical lithography, said method including the steps of: providing a mask blank for use in photolithography; masking selected portions of said mask blank with a mask layer to form a pattern of exposed and unexposed regions on the surface of said mask blank; introducing a substance into an area immediately underneath the surface of each of said exposed regions of said mask blank to alter the optical properties of each of said areas while the chemical properties of said surface of said mask blank remain unchanged wherein light transmitted through said mask blank will experience a phase shift and absorption only in the location of each of said exposed regions; and stripping away said mask layer, thereby leaving a consistently smooth and homogeneous surface on said mask blank which is void of any topographical imperfections.
Claim 2
Independent Claim
146 words
A method of producing a phase shifting photomask for use in optical lithography, said method including the steps of: providing a mask blank for use in photolithography; masking selected portions of said mask blank with a mask layer to form a pattern of exposed and unexposed regions on the surface of said mask blank; introducing a substance into an area immediately underneath the surface of each of said exposed regions of said mask blank to alter the optical properties of each of said areas while the chemical properties of said surface of said mask blank remain unchanged wherein light transmitted through said mask blank will experience a phase shift and absorption only in the location of each of said exposed regions; and stripping away said mask layer, thereby leaving a consistently smooth and homogeneous surface on said mask blank which is void of any topographical imperfections.
Claim 3
Dependent Claim
29 words
The method of claim 1, wherein each of said areas comprises an embedded region of phase shifting material underneath the surface of said mask blank at said exposed regions.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein said step of introducing includes ion implantation from selected dopants.
Claim 5
Dependent Claim
18 words
The method of claim 3, wherein said ion implantation is accomplished by means of an ion scanning beam.
Claim 6
Dependent Claim
18 words
The method of claim 3, wherein said ion implantation is accomplished by means of a patterned ion beam.
Claim 7
Dependent Claim
23 words
The method of claim 1, wherein said step of introducing includes the step of diffusing atoms into said areas of said mask blank.
Claim 8
Dependent Claim
13 words
The method of claim 1, wherein said mask blank is comprised of quartz.
Claim 9
Dependent Claim
28 words
The method of claim 1, wherein said substances introduced into said mask blank are selected from the group consisting of Boron, Phosphorus, Aluminum, Gallium, Indium, Arsenic and Antimony.
Claim 10
Dependent Claim
35 words
The method of claim 1, wherein said exposed regions of said mask blank produce a phase shift in optical radiation of 180° and a transmission loss of between 4% and 20% relative said unexposed regions.
Claim 11
Independent Claim
89 words
A method of producing a phase shifting photomask for use in optical lithography, said method including the steps of: providing a mask blank substrate for use in photolithography; implanting ions from a dopant into selected regions underneath a surface of said substrate in order to alter the optical properties of said selected regions while the chemical properties of said surface of said mask blank substrate remain unchanged such that the intensity and phase of optical radiation transmitted through said regions is modified relative to other areas of said substrate.
Claim 12
Independent Claim
89 words
A method of producing a phase shifting photomask for use in optical lithography, said method including the steps of: providing a mask blank substrate for use in photolithography; implanting ions from a dopant into selected regions underneath a surface of said substrate in order to alter the optical properties of said selected regions while the chemical properties of said surface of said mask blank substrate remain unchanged such that the intensity and phase of optical radiation transmitted through said regions is modified relative to other areas of said substrate.
Claim 13
Dependent Claim
41 words
The method of claim 10, wherein said step of implanting ions produces an embedded region of modified material underneath the surface of said mask blank at said selected regions, wherein the chemical properties of said surface of said substrate remain unchanged.
Claim 14
Dependent Claim
18 words
The method of claim 10, wherein said ion implantation is accomplished by means of an ion scanning beam.
Claim 15
Dependent Claim
18 words
The method of claim 10, wherein said ion implantation is accomplished by means of a patterned ion beam.
Claim 16
Dependent Claim
38 words
The method of claim 10, wherein said selected regions of said mask blank produce a phase shift in optical radiation of 180° and a transmission loss of between 4% and 20% relative said other areas of said substrate.
Claim 17
Dependent Claim
37 words
The photomask of claim 10, wherein said modified regions of said substrate produce a phase shift in optical radiation of 180° and a transmission loss of between 4% and 20% relative said unmodified regions of said substrate.
Claim 18
Dependent Claim
75 words
A phase shifting photomask for use in optical lithography, said photomask comprising: a transparent substrate being of a first index of refraction, said substrate including selected regions embedded underneath a top surface thereof, said selected regions being of a second index of refraction that is substantially different than said first index of refraction, wherein the intensity and phase of optical radiation transmitted through said substrate is altered only in said selected regions of said substrate.
Claim 19
Dependent Claim
75 words
A phase shifting photomask for use in optical lithography, said photomask comprising: a transparent substrate being of a first index of refraction, said substrate including selected regions embedded underneath a top surface thereof, said selected regions being of a second index of refraction that is substantially different than said first index of refraction, wherein the intensity and phase of optical radiation transmitted through said substrate is altered only in said selected regions of said substrate.
Claim 20
Dependent Claim
38 words
The photomask of claim 16, wherein the chemical properties of said surface of said mask substrate remain unchanged, thereby leaving a consistently smooth surface on said top surface of said substrate which is void of any topographical imperfections.
Claim 21
Dependent Claim
36 words
The photomask of claim 16, wherein said selected regions were changed from said first index of refraction to said second index of refraction by structurally modifying said selected regions by introducing a substance into said substrate.
Claim 22
Dependent Claim
26 words
The photomask of claim 18, wherein said substance introduced into said substrate is selected form the group consisting of Boron, Aluminum, Gallium, Indium, Arsenic and Antimony.
Claim 23
Dependent Claim
17 words
The photomask of claim 18, wherein introduction of said substance is accomplished by means of ion implantation.
Claim 24
Dependent Claim
16 words
The photomask of claim 18, wherein introduction of said substance is accomplished by means of diffusion.
Claim 25
Dependent Claim
10 words
The photomask of claim 16, wherein said substrate is quartz.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-20 | 2001-04-21 | 2001-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-20 | 2005-04-21 | 2005-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-20 | 2009-04-21 | 2009-10-21 | $7700.00 | Window Closed / Lapsed |