Patent US5663598A successfully refreshed from Google Patents.
US5663598A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrical circuit bonding interconnect component and flip chip interconnect bond
Assignee: Round Rock Research LLC
•
Filing: 1995-10-23
•
Granted: 1997-09-02
•
Expires: 2015-10-23
Abstract
Abstract An inexpensive low contact resistance electrical bonding interconnect having a metal bond pad portion and conductive epoxy portion. The conductive epoxy portion comprises a metal oxide reducing agent for reducing oxides formed before and/or during the fabrication of the bonding interconnect. The bonding interconnect is used to bond a die pad to a supporting substrate thereby forming a surface mount device.
Inventors
- 👤 Rickie C. Lake
- 👤 Mark E. Tuttle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:31
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/321; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H05K2201/00; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10674; H05K2201/10954; H05K2201/10984; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/07251; H10W72/073; H10W72/07331; H10W72/20; H10W72/251; H10W72/253; H10W72/30; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/50; H10W72/531; H10W72/536; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
109 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump being at least partially cured, the interconnect being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and bond pad outermost metal surface, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 2
Dependent Claim
109 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump being at least partially cured, the interconnect being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and bond pad outermost metal surface, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 3
Dependent Claim
108 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump being at least partially cured, the interconnect being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and bond pad outermost metal surface, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond.
Claim 4
Dependent Claim
108 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump being at least partially cured, the interconnect being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and bond pad outermost metal surface, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond.
Claim 5
Dependent Claim
157 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the semiconductor die being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and the conductive bonding area outermost metal surface; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 6
Dependent Claim
157 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the semiconductor die being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and the conductive bonding area outermost metal surface; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 7
Dependent Claim
158 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the semiconductor die being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and the conductive bonding area outermost metal surface; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump; the conductive epoxy bump covering all of the semiconductor die conductive bonding area and extending laterally outward therebeyond.
Claim 8
Dependent Claim
158 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the semiconductor die being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and the conductive bonding area outermost metal surface; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump; the conductive epoxy bump covering all of the semiconductor die conductive bonding area and extending laterally outward therebeyond.
Claim 9
Dependent Claim
78 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 10
Dependent Claim
78 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 11
Dependent Claim
12 words
The interconnect component of claim 5 wherein the oxidizable metal comprises aluminum.
Claim 12
Dependent Claim
12 words
The interconnect component of claim 5 wherein the oxidizable metal comprises copper.
Claim 13
Dependent Claim
62 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond.
Claim 14
Dependent Claim
62 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond.
Claim 15
Dependent Claim
132 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 16
Dependent Claim
132 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.
Claim 17
Dependent Claim
12 words
The interconnect component of claim 9 wherein the oxidizable metal comprises aluminum.
Claim 18
Dependent Claim
12 words
The interconnect component of claim 9 wherein the oxidizable metal comprises copper.
Claim 19
Dependent Claim
118 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, and an electrically conductive epoxy bump bonded to the conductive bonding area; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump; the conductive epoxy bump covering all of the semiconductor die conductive bonding area and extending laterally outward therebeyond.
Claim 20
Dependent Claim
118 words
A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, and an electrically conductive epoxy bump bonded to the conductive bonding area; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump; the conductive epoxy bump covering all of the semiconductor die conductive bonding area and extending laterally outward therebeyond.
Claim 21
Dependent Claim
76 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding pad on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding pad comprising an inner layer of aluminum and an outer layer of copper; and an electrically conductive epoxy bump bonded to the copper, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the copper.
Claim 22
Dependent Claim
76 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding pad on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding pad comprising an inner layer of aluminum and an outer layer of copper; and an electrically conductive epoxy bump bonded to the copper, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the copper.
Claim 23
Dependent Claim
95 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding pad on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding pad comprising an inner layer of a first metal and an outer layer of a second metal, the first and second metals being different from one another, the second metal comprising copper; and an electrically conductive epoxy bump bonded to the copper, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the copper.
Claim 24
Dependent Claim
95 words
An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding pad on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding pad comprising an inner layer of a first metal and an outer layer of a second metal, the first and second metals being different from one another, the second metal comprising copper; and an electrically conductive epoxy bump bonded to the copper, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the copper.
References Cited (Backward Citations)
US3871014A
Cited
US3871015A
Cited
US4582724A
Cited
DE3702354A1
Cited
US4922321A
Cited
JPS63276237A
Cited
JPH02139933A
Cited
US5029585A
Cited
US5074947A
Cited
US5196371A
Cited
US5235140A
Cited
JPH05335316A
Cited
US5384284A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-01 | 2001-03-03 | 2001-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-01 | 2005-03-03 | 2005-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-01 | 2009-03-03 | 2009-09-02 | $7700.00 | Window Closed / Lapsed |