US5658829A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor processing method of forming an electrically conductive contact plug
Assignee: Micron Technology Inc
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Filing: 1995-11-07
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Granted: 1997-08-19
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Expires: 2015-11-07
Abstract
Abstract A semiconductor processing method of forming an electrically conductive contact plug relative to a wafer includes, a) providing a substrate to which electrical connection is to be made; b) depositing a layer of first material atop the substrate to a selected thickness; c) pattern masking the first material layer for formation of a desired contact opening therethrough; d) etching through the first material layer to form a contact opening therethrough for making electrical connection with the substrate, the contact opening having an outermost region; e) after etching to form the contact opening, removing the masking from the first material layer; f) after removing the masking from the first material layer, facet sputter etching into the first material layer relative to the contact opening to provide outwardly angled sidewalls which effectively widen the contact opening outermost region, the outwardly angled sidewalls having an inner base where they join with the original contact opening; g) depositing a layer of conductive material atop the wafer and to within the facet etched contact opening to fill the contact opening; and h) etching the conductive material and first material layer inwardly to at least the angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
Inventors
- 👤 Viju K. Mathews
- 👤 Nanseng Jeng
- 👤 Pierre C. Fazan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:01
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/071; H10W20/081; H10W20/082; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
99 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising the following steps: providing a substrate; forming a first material layer atop the substrate; forming a contact opening within the first material layer, the contact opening having sidewalls with inner generally vertical sidewall portions and outwardly angled sidewall outer portions which are substantially angled from vertical and join with the inner generally vertical sidewall portions at a junction; providing conductive material within the contact opening and over the outwardly angled sidewall portions; and etching the first material layer to at least the junction.
Claim 2
Dependent Claim
99 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising the following steps: providing a substrate; forming a first material layer atop the substrate; forming a contact opening within the first material layer, the contact opening having sidewalls with inner generally vertical sidewall portions and outwardly angled sidewall outer portions which are substantially angled from vertical and join with the inner generally vertical sidewall portions at a junction; providing conductive material within the contact opening and over the outwardly angled sidewall portions; and etching the first material layer to at least the junction.
Claim 3
Dependent Claim
35 words
The processing method of claim 1 wherein the step of etching is conducted to define an electrically conductive contact plug which electrically contacts with the substrate and which projects outwardly of the first material layer.
Claim 4
Dependent Claim
13 words
The processing method of claim 1 wherein the steps occur sequentially as written.
Claim 5
Dependent Claim
147 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising the following steps: providing a substrate; forming a first material layer atop the substrate; forming a contact opening within the first material, the contact opening having outwardly angled sidewalls with a first degree of taper, the outwardly angled sidewalls having an inner base at which the first degree of taper changes to a second degree of taper which is less than the first degree of taper; providing conductive material within the contact opening to fill the contact opening to beyond the outwardly angled sidewalls' inner base, the conductive material overlying at least some of the outwardly angled sidewalls having the first degree of taper; and etching the conductive material to at least the outwardly angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
Claim 6
Dependent Claim
147 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising the following steps: providing a substrate; forming a first material layer atop the substrate; forming a contact opening within the first material, the contact opening having outwardly angled sidewalls with a first degree of taper, the outwardly angled sidewalls having an inner base at which the first degree of taper changes to a second degree of taper which is less than the first degree of taper; providing conductive material within the contact opening to fill the contact opening to beyond the outwardly angled sidewalls' inner base, the conductive material overlying at least some of the outwardly angled sidewalls having the first degree of taper; and etching the conductive material to at least the outwardly angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
Claim 7
Dependent Claim
28 words
The processing method of claim 4 wherein the step of etching is conducted to define an electrically conductive contact plug which projects outwardly of the first material layer.
Claim 8
Dependent Claim
13 words
The processing method of claim 4 wherein the steps occur sequentially as written.
Claim 9
Dependent Claim
243 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising: forming a layer of insulative material over a substrate with which electrical connection is to be made; forming a layer of masking material over the layer of insulative material; patterning the layer of masking material to define a contact opening pattern; etching a contact opening in the layer of insulative material layer through the contact opening pattern, the contact opening having an innermost region adjacent the substrate and an outermost region outward of the innermost region; after etching to form the contact opening, removing masking material from the layer of insulative material; after removing the masking material, etching into the layer of insulative material adjacent the contact opening to provide outwardly angled sidewalls within the outermost region to effectively widen the outermost region as compared to the innermost region, the outwardly angled sidewalls having an inner base where they join with the innermost region as originally formed; depositing a first layer of conductive material over the substrate and within the etched contact opening to less than fill the contact opening; depositing a second layer of conductive material over the substrate and within the contact opening to fill the contact opening; etching the first and second layers of conductive material and the layer of insulative material to at least the outwardly angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
Claim 10
Dependent Claim
243 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising: forming a layer of insulative material over a substrate with which electrical connection is to be made; forming a layer of masking material over the layer of insulative material; patterning the layer of masking material to define a contact opening pattern; etching a contact opening in the layer of insulative material layer through the contact opening pattern, the contact opening having an innermost region adjacent the substrate and an outermost region outward of the innermost region; after etching to form the contact opening, removing masking material from the layer of insulative material; after removing the masking material, etching into the layer of insulative material adjacent the contact opening to provide outwardly angled sidewalls within the outermost region to effectively widen the outermost region as compared to the innermost region, the outwardly angled sidewalls having an inner base where they join with the innermost region as originally formed; depositing a first layer of conductive material over the substrate and within the etched contact opening to less than fill the contact opening; depositing a second layer of conductive material over the substrate and within the contact opening to fill the contact opening; etching the first and second layers of conductive material and the layer of insulative material to at least the outwardly angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
Claim 11
Dependent Claim
240 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising: forming a layer of insulative oxide atop a substrate with which electrical connection is to be made; forming a layer of masking material over the layer of insulative oxide; patterning the layer of masking material to define a contact opening pattern; etching a contact opening in the layer of insulative oxide through the contact opening pattern, the contact opening having an outermost region; removing the layer of masking material from the layer of insulative oxide; etching into the layer of insulative oxide adjacent the contact opening to provide outwardly angled sidewalls which effectively widen the contact opening outermost region, the outwardly angled sidewalls having a first degree of taper and an inner base at which the first degree of taper changes to a second degree of taper which is less than the first degree of taper; forming a layer of titanium over the substrate and within the contact opening to less than completely fill the contact opening, the layer of titanium overlying at least some of the outwardly angled sidewalls having the first degree of taper; forming a layer of tungsten over the substrate and within the contact opening to fill the contact opening; and etching the titanium, tungsten and insulative oxide layers to at least the angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
Claim 12
Dependent Claim
240 words
A semiconductor processing method of forming an electrically conductive contact plug relative to a substrate comprising: forming a layer of insulative oxide atop a substrate with which electrical connection is to be made; forming a layer of masking material over the layer of insulative oxide; patterning the layer of masking material to define a contact opening pattern; etching a contact opening in the layer of insulative oxide through the contact opening pattern, the contact opening having an outermost region; removing the layer of masking material from the layer of insulative oxide; etching into the layer of insulative oxide adjacent the contact opening to provide outwardly angled sidewalls which effectively widen the contact opening outermost region, the outwardly angled sidewalls having a first degree of taper and an inner base at which the first degree of taper changes to a second degree of taper which is less than the first degree of taper; forming a layer of titanium over the substrate and within the contact opening to less than completely fill the contact opening, the layer of titanium overlying at least some of the outwardly angled sidewalls having the first degree of taper; forming a layer of tungsten over the substrate and within the contact opening to fill the contact opening; and etching the titanium, tungsten and insulative oxide layers to at least the angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-18 | 2001-02-17 | 2001-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-18 | 2005-02-17 | 2005-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-18 | 2009-02-17 | 2009-08-19 | $7700.00 | Window Closed / Lapsed |