Non-volatile semiconductor memory having programming region for injecting and ejecting carriers into and from floating gate

Claim 2

A semiconductor memory device having at least one memory cell and a select transistor, said memory cell comprising a source region, a drain region, a floating gate formed on a gate insulating film covering a channel region between said source and drain regions, a programming region formed separately from said source and drain regions to inject carriers into said floating gate; said select transistor being connected to said source of said memory cell and having a selector gate constituted by a first wiring line and conducting a voltage level of said source of said memory cell to a second wiring by causing said selector gate to activate; said drain region of said memory cell being connected to a third wiring line through a first contact hole, and said programming region of said memory cell being connected to a fourth wiring line through a second contact hole, and said first wiring line being parallel to said third wiring line and said second wiring line being perpendicular to said fourth wiring line.

Claim 3

A semiconductor memory device comprising a semiconductor substrate and a plurality of memory cells, each of said memory cells including a first region, a second region and a programming region selectively formed in said semiconductor substrate, a first gate insulating film covering a part of said first region, a second gate insulating film covering a part of said programming region, and a floating gate having a first portion overlapping said part of said first region to form a first capacitance therebetween and a second portion overlapping said part of said programming region to form a second capacitance, said first capacitance being larger than said second capacitance, a third region selectively formed in said semiconductor substrate apart from said second region, a third gate insulating film covering a portion of said semiconductor substrate between said second and third regions, and a selector gate provided on said third insulating film, said third gate insulating film having a thickness greater than a thickness of each of said first and second gate insulating films.

Claim 4

A semiconductor memory device comprising a semiconductor substrate and a plurality of memory cells, each of said memory cells including a first region, a second region and a programming region selectively formed in said semiconductor substrate, a first gate insulating film covering a part of said first region, a second gate insulating film covering a part of said programming region, and a floating gate having a first portion overlapping said part of said first region to form a first capacitance therebetween and a second portion overlapping said part of said programming region to form a second capacitance, said first capacitance being larger than said second capacitance, a third region selectively formed in said semiconductor substrate apart from said second region, a third gate insulating film covering a portion of said semiconductor substrate between said second and third regions, and a selector gate provided on said third insulating film, said third gate insulating film having a thickness greater than a thickness of each of said first and second gate insulating films.

Claim 5

A semiconductor memory device comprising a semiconductor substrate and a plurality of memory cells, each of said memory cells including a first region, a second region and a programming region selectively formed in said semiconductor substrate, a first gate insulating film covering a part of said first region, a second gate insulating film covering a part of said programming region, said first gate insulating film and said second gate insulating film being of substantially equal thickness, a floating gate having a first portion overlapping said part of said first region to form a first capacitance therebetween and a second portion overlapping said part of said programming region to form a second capacitance, an area of said first portion being larger than an area of said second portion, such that said first capacitance is larger than said second capacitance, said device further comprising a third region selectively formed in said semiconductor substrate apart from said second region, a third gate insulating film covering a portion of said semiconductor substrate between said second and third regions, and a selector gate provided on said third insulating film, said third gate insulating film having a thickness greater than a thickness of each of said first and second gate insulating films.

Claim 6

A semiconductor memory device comprising a semiconductor substrate and a plurality of memory cells, each of said memory cells including a first region, a second region and a programming region selectively formed in said semiconductor substrate, a first gate insulating film covering a part of said first region, a second gate insulating film covering a part of said programming region, said first gate insulating film and said second gate insulating film being of substantially equal thickness, a floating gate having a first portion overlapping said part of said first region to form a first capacitance therebetween and a second portion overlapping said part of said programming region to form a second capacitance, an area of said first portion being larger than an area of said second portion, such that said first capacitance is larger than said second capacitance, said device further comprising a third region selectively formed in said semiconductor substrate apart from said second region, a third gate insulating film covering a portion of said semiconductor substrate between said second and third regions, and a selector gate provided on said third insulating film, said third gate insulating film having a thickness greater than a thickness of each of said first and second gate insulating films.