US5648671A
Expired / Lapsed
US
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Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
Assignee: NXP BV
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Filing: 1995-12-13
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Granted: 1997-07-15
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Expires: 2015-12-13
Abstract
Abstract A lateral thin-film silicon-on-insulator (SOI) device includes a lateral semiconductor device such as a diode or MOSFET provided in a thin semiconductor film on a thin buried oxide. The lateral semiconductor device structure includes at least two semiconductor regions separated by a lateral drift region. By providing a substantially linear lateral doping profile in the lateral drift region, and by providing a conductive field plate on a linearly-graded top oxide insulating layer, a device structure is obtained in which conduction losses can be reduced without reducing breakdown voltage.
Inventors
- 👤 Steven L. Merchant
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D64/00; H10D64/111; H10D30/64; H10D30/66; H10D30/668; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6717; H10D8/00; H10D8/20; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/152; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
142 words
A lateral thin-film Silicon-On-Insulator (SOI) device comprising a semiconductor substrate, a thin buried oxide insulating layer on said substrate, and a lateral semiconductor device provided in a thin semiconductor film on said thin buried oxide, said thin semiconductor film comprising a first region of a first conductivity type, a second region of a second conductivity type opposite to that of the first and spaced apart from said first region by a lateral drift region of said second conductivity type having a substantially linear lateral doping profile, a top oxide insulating layer over said thin semiconductor film and having a substantially linearly-graded portion over a major portion of said lateral drift region which increases in thickness from adjacent said first region to adjacent said second region, and a conductive field plate on at least said linearly-graded portion of said top oxide insulating layer.
Claim 2
Dependent Claim
142 words
A lateral thin-film Silicon-On-Insulator (SOI) device comprising a semiconductor substrate, a thin buried oxide insulating layer on said substrate, and a lateral semiconductor device provided in a thin semiconductor film on said thin buried oxide, said thin semiconductor film comprising a first region of a first conductivity type, a second region of a second conductivity type opposite to that of the first and spaced apart from said first region by a lateral drift region of said second conductivity type having a substantially linear lateral doping profile, a top oxide insulating layer over said thin semiconductor film and having a substantially linearly-graded portion over a major portion of said lateral drift region which increases in thickness from adjacent said first region to adjacent said second region, and a conductive field plate on at least said linearly-graded portion of said top oxide insulating layer.
Claim 3
Dependent Claim
45 words
A lateral thin-film Silicon-On-Insulator (SOI) device as claimed in claim 1, wherein said device comprises a diode, said field plate is connected to said first region, which forms a first electrode of said diode, and said second region forms a second electrode of said diode.
Claim 4
Dependent Claim
33 words
A lateral thin-film Silicon-On-Insulator (SOI) device as in claim 2, wherein a maximum thickness of said top oxide insulating layer is substantially equal to a thickness of said thin buried oxide insulating layer.
Claim 5
Dependent Claim
82 words
A lateral thin-film Silicon-On-Insulator (SOI) device as claimed in claim 1, wherein said device comprises a MOSFET, said thin semiconductor film further comprises a third region of said second conductivity type alongside said first region at a side thereof remote from said lateral drift region, said conductive field plate extends over and is insulated from said first region to form a gate electrode of said MOSFET, and said third and second regions form a source and a drain region of said MOSFET.
Claim 6
Dependent Claim
33 words
A lateral thin-film Silicon-On-Insulator (SOI) device as in claim 4, wherein a maximum thickness of said top oxide insulating layer is substantially equal to a thickness of said thin buried oxide insulating layer.
Claim 7
Dependent Claim
33 words
A lateral thin-film Silicon-On-Insulator (SOI) device as claimed in claim 1, wherein the doping level of said lateral drift region increases linearly in a direction from said first region to said second region.
Claim 8
Dependent Claim
24 words
A lateral thin-film Silicon-On-Insulator (SOI) device as in claim 6, wherein said doping level increases linearly by a factor of at least about 100.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-14 | 2001-01-13 | 2001-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-14 | 2005-01-13 | 2005-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-14 | 2009-01-13 | 2009-07-15 | $7700.00 | Window Closed / Lapsed |