Patent US2729187A successfully refreshed from Google Patents.
US5362979A
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SOI transistor with improved source-high performance
Assignee: NXP BV
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Filing: 1993-08-10
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Granted: 1994-11-08
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Expires: 2013-08-10
Abstract
Abstract The present application is directed to an improved arrangement for a thin silicon SOI transistor having improved source-high performance especially for bridge type circuits. This structure prevents forward current saturation during such source-high operations, and is made by forming the laterally extending silicon layer with a region of thinner thickness over 1/3 to 2/3 of the length of the drift region, or the lateral linear doping region. The field plate is formed with a separation from the gate electrode, and only extends over the thinned portion of the drift region. The gate electrode and field plate are short-circuited by a metal interconnect.
Inventors
- 👤 Steven L. Merchant
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:52
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D12/00; H10D12/411; H10D12/421; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/64; H10D30/65; H10D30/657; H10D30/66; H10D30/668; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6713; H10D30/6715; H10D30/6717; H10D30/6729; H10D30/673; H10D8/00; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/156; H10D62/159; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
127 words
A thin film SOI device having improved source-high performance characteristics comprising the structure of a buried oxide layer; a layer of silicon on said buried oxide layer, said layer of silicon having a laterally extending region of both a first thickness and a second smaller thickness; a second oxide layer on said layer of silicon; a gate electrode above a a portion of said first thickness of said layer of silicon; a drain region laterally adjacent to said second smaller thickness of said layer of silicon; a source region laterally separated from said gate electrode; a field plate separate from said gate electrode and extending laterally over said second smaller thickness of said layer of silicon, and means for short-circuiting said gate electrode and said field plate.
Claim 2
Dependent Claim
127 words
A thin film SOI device having improved source-high performance characteristics comprising the structure of a buried oxide layer; a layer of silicon on said buried oxide layer, said layer of silicon having a laterally extending region of both a first thickness and a second smaller thickness; a second oxide layer on said layer of silicon; a gate electrode above a a portion of said first thickness of said layer of silicon; a drain region laterally adjacent to said second smaller thickness of said layer of silicon; a source region laterally separated from said gate electrode; a field plate separate from said gate electrode and extending laterally over said second smaller thickness of said layer of silicon, and means for short-circuiting said gate electrode and said field plate.
Claim 3
Dependent Claim
30 words
A thin film SOI device according to claim 1, wherein said second smaller thickness extends over about 1/3 to 2/3 of said laterally extending region of said layer of silicon.
Claim 4
Dependent Claim
20 words
A thin film SOI device according to claim 1, wherein said second smaller thickness has a thickness of 0.1-0.4 μm.
Claim 5
Dependent Claim
22 words
A thin film SOI device according to claim 1, wherein said first thickness of said layer of silicon is about 1-2 μm.
Claim 6
Dependent Claim
34 words
A thin film SOI device according to claim 1, wherein both said gate electrode and said field plate are polysilicon, and said means for short-circuiting is conductive metal extending over said second oxide layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |