US5647932A
Expired / Lapsed
US
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Method of processing a piezoelectric device
Assignee: Panasonic Holdings Corp
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Filing: 1996-02-14
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Granted: 1997-07-15
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Expires: 2016-02-14
Abstract
Abstract The following steps are performed when processing electronic components such as piezoelectric devices. At Step 1 inter-atom bond is created between a functional member such as a quartz crystal plate and a first substrate, and the functional member and the quartz crystal plate are directly joined together. At Step 2, the functional member and a second substrate are fixed together with an adhesive agent or by a direct bond. At Step 3, the first substrate is removed chemically or mechanically, with said functional member and said second substrate still being joined together. A step of polishing said functional member for the adjustment of thickness thereof may be done between Step 1 and Step 2. For example, a silicon dioxide thin film may be provided between the functional member and the first substrate. Since no adhesive layer exists between the functional member and the first substrate, this improves the degree of plane of the functional member when joined to the first substrate. Therefore, functional member thickness accuracy becomes extremely high and mass productivity is also improved.
Inventors
- 👤 Yutaka Taguchi
- 👤 Kazuo Eda
- 👤 Akihiro Kanaboshi
- 👤 Tetsuyoshi Ogura
- 👤 Yoshihiro Tomita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:30
CPC Classifications
H; H03; H03H; H03H3/00; H03H3/007; H03H3/02; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
129 words
A method of processing a piezoelectric device comprising the steps of: (a) joining a functional member composed of a piezoelectric material and a first substrate together by creating an inter-atom bond such that a strong covalent bond is formed between a first flat surface of said functional member and one surface of said first substrate, said inter-atom bond created by polishing said first flat surface and said one flat surface of said first substrate, subjecting said surfaces to a hydrophiliticization treatment, and heating, (b) fixing a second substrate to a second flat surface of said functional member, and (c) removing said first substrate from said first flat surface of said functional member by mechanical polishing or chemical processing, with said functional member and said second substrate being joined together.
Claim 2
Independent Claim
129 words
A method of processing a piezoelectric device comprising the steps of: (a) joining a functional member composed of a piezoelectric material and a first substrate together by creating an inter-atom bond such that a strong covalent bond is formed between a first flat surface of said functional member and one surface of said first substrate, said inter-atom bond created by polishing said first flat surface and said one flat surface of said first substrate, subjecting said surfaces to a hydrophiliticization treatment, and heating, (b) fixing a second substrate to a second flat surface of said functional member, and (c) removing said first substrate from said first flat surface of said functional member by mechanical polishing or chemical processing, with said functional member and said second substrate being joined together.
Claim 3
Dependent Claim
40 words
A method of processing a piezoelectric device as in claim 1 further including a step of adjusting the thickness of said functional member by removing a part of said functional member after said joining step but before said fixing step.
Claim 4
Dependent Claim
46 words
A method of processing a piezoelectric device as in claim 1 wherein in said fixing step said second substrate is fixed to said functional member by creating an inter-atom bond between surfaces of said second substrate and said functional member to be contacted with each other.
Claim 5
Dependent Claim
34 words
A method of processing a piezoelectric device as in claim 1, wherein said piezoelectric material is composed of quartz crystal, lithium tantalate, lithium niobate, lithium borate, lead zirconate titanate, or lead lanthanum zirconate titanate.
Claim 6
Dependent Claim
21 words
A method of processing a piezoelectric device as in claim 1, wherein said first substrate is composed of glass or silicon.
Claim 7
Dependent Claim
25 words
A method of processing a piezoelectric device as in claim 1, wherein said second substrate is composed of the same material as said first substrate.
Claim 8
Dependent Claim
25 words
A method of processing a piezoelectric device as in claim 1, wherein said second substrate is composed of the same material as said functional member.
Claim 9
Dependent Claim
36 words
A method of processing a piezoelectric device as in claim 1, wherein said second substrate is composed of quartz crystal, lithium tantalate, lithium niobate, lithium borate, lead zirconate titanate, lead lanthanum zirconate titanate glass, or silicon.
Claim 10
Independent Claim
138 words
A method of processing a piezoelectric device comprising the steps of: (a) forming a thin film of uniform thickness on a surface of a first substrate, (b) joining a functional member and said first substrate together by creating an inter-atom bond such that a strong covalent bond is formed between a first flat surface of said functional member and said surface of said first substrate, which is provided with said thin film, said inter-atom bond created by polishing said first flat surface and said one flat surface of said first substrate, subjecting said surfaces to a hydrophiliticization treatment, and heating at a high temperature, (c) fixing a second substrate to a second flat surface of said functional member, and (d) removing said first substrate from said functional member, with said second substrate being fixed to said functional member.
Claim 11
Independent Claim
138 words
A method of processing a piezoelectric device comprising the steps of: (a) forming a thin film of uniform thickness on a surface of a first substrate, (b) joining a functional member and said first substrate together by creating an inter-atom bond such that a strong covalent bond is formed between a first flat surface of said functional member and said surface of said first substrate, which is provided with said thin film, said inter-atom bond created by polishing said first flat surface and said one flat surface of said first substrate, subjecting said surfaces to a hydrophiliticization treatment, and heating at a high temperature, (c) fixing a second substrate to a second flat surface of said functional member, and (d) removing said first substrate from said functional member, with said second substrate being fixed to said functional member.
Claim 12
Dependent Claim
40 words
A method of processing a piezoelectric device as in claim 9 further including a step of adjusting the thickness of said functional member by removing a part of said functional member after said joining step but before said fixing step.
Claim 13
Dependent Claim
46 words
A method of processing a piezoelectric device as in claim 9 wherein in said fixing step said second substrate is fixed to said functional member by creating an inter-atom bond between surfaces of said second substrate and said functional member to be contacted with each other.
Claim 14
Dependent Claim
26 words
A method of processing a piezoelectric device as in claim 9, wherein in said removing step said first substrate is removed by etching said thin film.
Claim 15
Dependent Claim
33 words
A method of processing a piezoelectric device as in claim 9 wherein in said removing step said first substrate is removed either by means of mechanical polishing or by means of chemical processing.
Claim 16
Dependent Claim
21 words
A method of processing a piezoelectric device as in claim 9 wherein said functional member is composed of a piezoelectric material.
Claim 17
Dependent Claim
43 words
A method of processing a piezoelectric device as in claim 9, wherein said functional member is composed of a piezoelectric material, said piezoelectric material is composed of quartz crystal, lithium tantalate, lithium niobate, lithium borate, lead zirconate titanate, or lead lanthanum zirconate titanate.
Claim 18
Dependent Claim
36 words
A method of processing a piezoelectric device as in claim 9, wherein said first substrate is composed of quartz crystal, lithium tantalate, lithium niobate, lithium borate, lead zirconate titanate, lead lanthanum zirconate titanate, glass, or silicon.
Claim 19
Dependent Claim
25 words
A method of processing a piezoelectric device as in claim 9, wherein said second substrate is composed of the same material as said first substrate.
Claim 20
Dependent Claim
25 words
A method of processing a piezoelectric device as in claim 9, wherein said second substrate is composed of the same material as said functional member.
Claim 21
Dependent Claim
36 words
A method of processing a piezoelectric device as in claim 9, wherein said second substrate is composed of quartz crystal, lithium tantalate, lithium niobate, lithium borate, lead zirconate titanate, lead lanthanum zirconate titanate, glass, or silicon.
Claim 22
Dependent Claim
22 words
A method of processing a piezoelectric device as in claim 9, wherein said thin film is composed of silicon or silicon dioxide.
Claim 23
Dependent Claim
59 words
A method of processing a piezoelectric device as in either claim 1 or claim 9, wherein said bonding of said functional member and said first substrate through inter-atom bonding is performed by subjecting surfaces of said functional member and said first substrate to be contacted with each other to a hydrophilicitization treatment and then to an ultraviolet illumination treatment.
Claim 24
Dependent Claim
43 words
A method of processing a piezoelectric device as in either claim 1 or claim 9 further including a step of performing a piezoelectric device subdivision with the functional member and the second substrate being joined together, after all the steps have been completed.
Claim 25
Dependent Claim
57 words
A method of processing a piezoelectric device as in either claim 1 or claim 9, wherein in said fixing step said second substrate is fixed to said functional member with an adhesive agent and said method further includes a step of separating said second substrate from said functional member after all of said steps have been completed.
Claim 26
Independent Claim
103 words
A method of processing a piezoelectric device comprising the steps of: (a) joining a functional member composed of a piezoelectric material and a first substrate together by creating an inter-atom bond such that a strong covalent bond is formed between a first flat surface of said functional member and one surface of said first substrate, (b) fixing a second substrate to a second flat surface of said functional member, and (c) removing said first substrate from said first flat surface of said functional member, with said functional member and said second substrate being joined together and said first substrate being destroyed when removed.
Claim 27
Independent Claim
103 words
A method of processing a piezoelectric device comprising the steps of: (a) joining a functional member composed of a piezoelectric material and a first substrate together by creating an inter-atom bond such that a strong covalent bond is formed between a first flat surface of said functional member and one surface of said first substrate, (b) fixing a second substrate to a second flat surface of said functional member, and (c) removing said first substrate from said first flat surface of said functional member, with said functional member and said second substrate being joined together and said first substrate being destroyed when removed.
References Cited (Backward Citations)
US3123953A
Cited
US4112147A
Cited
US4396895A
Cited
EP0136050A1
Cited
US4983251A
Cited
US4760358A
Cited
JPS63127610A
Cited
US5028558A
Cited
US5160560A
Cited
US4883215A
Cited
US5169472A
Cited
US5232870A
Cited
JPH04367111A
Cited
US5374581A
Cited
JPH05121985A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-14 | 2001-01-13 | 2001-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-14 | 2005-01-13 | 2005-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-14 | 2009-01-13 | 2009-07-15 | $7700.00 | Window Closed / Lapsed |