Diamond composite films for protective coatings on metals and method of formation

Claim 1

A method for forming a structure of multiple diamond crystallite composites on a metal or carbon substrate within an electron cyclotron resonance microwave plasma chemical vapor deposition chamber, the method comprising: a first step of reacting the substrate with silane and hydrogen to form a metal silicide on the substrate if the substrate is metal or reacting the substrate with silane, methane and hydrogen to form silicon carbide on the substrate if the substrate is carbon a second step of depositing diamond crystallites onto the metal silicide or silicon carbide layer; a third step of depositing an amorphous layer onto the diamond crystallites and onto exposed portions of the metal silicide or silicon carbide layer; and repeating the first step through the third step at least one time, each iteration creating one diamond crystallite composite.

Claim 2

A method for forming a structure of multiple diamond crystallite composites on a metal or carbon substrate within an electron cyclotron resonance microwave plasma chemical vapor deposition chamber, the method comprising: a first step of reacting the substrate with silane and hydrogen to form a metal silicide on the substrate if the substrate is metal or reacting the substrate with silane, methane and hydrogen to form silicon carbide on the substrate if the substrate is carbon a second step of depositing diamond crystallites onto the metal silicide or silicon carbide layer; a third step of depositing an amorphous layer onto the diamond crystallites and onto exposed portions of the metal silicide or silicon carbide layer; and repeating the first step through the third step at least one time, each iteration creating one diamond crystallite composite.

Claim 4

A method for forming a structure of multiple diamond crystallite composites on a metal substrate within an electron cyclotron resonance microwave plasma chemical vapor deposition chamber , the steps of forming the structure comprising: depositing an amorphous silicon film on a surface of the metal substrate by mixing hydrogen with silane at a temperature less than 100 degrees Celsius within the chamber; heating the amorphous silicon to 800 degrees Celsius to form an interlayer in a bottom portion of the amorphous silicon film through a chemical reaction of the surface with the silicon film; forming an interlayer of silicon carbide in a top portion of the amorphous silicon film through a chemical reaction of methane with the silicon film at about 800 degrees Celsius; nucleating and depositing diamond crystallites on the silicon carbide interlayer by mixing methane and hydrogen at about 800 degrees Celsius; depositing an amorphous layer of diamond-like carbon, titanium carbide, titanium dioxide pr titanium nitride onto the diamond crystallites and onto exposed portions of the silicon carbide interlayer; and repeating the above steps at least one time, each iteration creating one diamond crystallite composite.

Claim 5

A method for forming a structure of multiple diamond crystallite composites on a metal substrate within an electron cyclotron resonance microwave plasma chemical vapor deposition chamber , the steps of forming the structure comprising: depositing an amorphous silicon film on a surface of the metal substrate by mixing hydrogen with silane at a temperature less than 100 degrees Celsius within the chamber; heating the amorphous silicon to 800 degrees Celsius to form an interlayer in a bottom portion of the amorphous silicon film through a chemical reaction of the surface with the silicon film; forming an interlayer of silicon carbide in a top portion of the amorphous silicon film through a chemical reaction of methane with the silicon film at about 800 degrees Celsius; nucleating and depositing diamond crystallites on the silicon carbide interlayer by mixing methane and hydrogen at about 800 degrees Celsius; depositing an amorphous layer of diamond-like carbon, titanium carbide, titanium dioxide pr titanium nitride onto the diamond crystallites and onto exposed portions of the silicon carbide interlayer; and repeating the above steps at least one time, each iteration creating one diamond crystallite composite.