Abstract A method for forming an element isolation insulating film of semiconductor devices, by which junction leakage current can be greatly reduced, comprising the steps of: forming a pad oxide film and a first insulating film on a semiconductor substrate, in sequence; patterning the pad oxide film and the first insulating film to expose an inactive region of the semiconductor device; constructing a spacer with a second insulating film at the side wall of the patterned first insulating film; etching the semiconductor substrate at a certain depth, to form a trench, the patterned first insulating film and the second insulating film spacer serving as a mask; implanting germanium impurities in the trench at a predetermined dose under a predetermined energy, to form an amorphous region to remove the lattice defective occurring upon forming the trench, the patterned first insulating film and the second insulating film spacer serving as a mask; crystallizing the amorphous region by a solid phase epitaxy process; and constructing an element isolation insulating film in the trench by thermal oxidation.
A method for forming an element isolation insulating film of semiconductor devices, comprising the steps of: forming a pad oxide film and a first insulating film on a semiconductor substrate, in sequence; patterning the pad oxide film and the first insulating film to expose an inactive region of the semiconductor device; constructing a spacer with a second insulating film at the side wall of the patterned first insulating film; etching the semiconductor substrate at a certain depth, to form a trench, said patterned first insulating film and said second insulating film spacer serving as a mask; implanting germanium impurities in the trench at a predetermined dose under a predetermined energy, to form an amorphous region to remove the lattice defects occurring upon forming the trench, said patterned first insulating film and said second insulating film spacer serving as a mask; crystallizing the amorphous region by a solid phase epitaxy process; and constructing an element isolation insulating film in the trench by thermal oxidation.
Claim 2
Independent Claim
163 words
A method for forming an element isolation insulating film of semiconductor devices, comprising the steps of: forming a pad oxide film and a first insulating film on a semiconductor substrate, in sequence; patterning the pad oxide film and the first insulating film to expose an inactive region of the semiconductor device; constructing a spacer with a second insulating film at the side wall of the patterned first insulating film; etching the semiconductor substrate at a certain depth, to form a trench, said patterned first insulating film and said second insulating film spacer serving as a mask; implanting germanium impurities in the trench at a predetermined dose under a predetermined energy, to form an amorphous region to remove the lattice defects occurring upon forming the trench, said patterned first insulating film and said second insulating film spacer serving as a mask; crystallizing the amorphous region by a solid phase epitaxy process; and constructing an element isolation insulating film in the trench by thermal oxidation.
Claim 3
Dependent Claim
22 words
A method in accordance with claim 1, wherein said first insulating film and said second insulating film are both made of nitride.
Claim 4
Dependent Claim
23 words
A method in accordance with claim 1, wherein said predetermined dose ranges from 9×10 13 /cm 2 to 1.0×10 15 /cm 2 .
Claim 5
Dependent Claim
17 words
A method in accordance with claim 1, wherein said predetermined energy ranges from 10 to 100 KeV.
Claim 6
Dependent Claim
33 words
A method in accordance with claim 1, wherein said solid phase epitaxy process is carried out at a temperature of 500° to 600° C. for 1 to 3 hours under a nitrogen atmosphere.