Method of forming an isolation region in a semiconductor device

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a surface of a semiconductor substrate; providing a masking layer for preventing oxidation of the underlying semiconductor substrate surface, said masking layer comprising a polycrystalline silicon film directly disposed on the insulating film and a silicon nitride film covering upper and side walls of the polycrystalline silicon film, the masking layer being formed by forming the polycrystalline silicon film on the insulating film, forming a first silicon nitride film on the polycrystalline silicon film, successively subjecting the first silicon nitride film, the polycrystalline silicon film and the semiconductor substrate to selective etching, oxidizing the semiconductor substrate to form an oxide film on the sides of the polycrystalline silicon film and the surface of the semiconductor substrate, depositing a second silicon nitride film on the surface of the exposed portion of the semiconductor substrate, and subjecting the second silicon nitride film to anisotropic etching to form side wall spacers of the second silicon nitride film on the sides of the polycrystalline silicon film; subjecting the semiconductor substrate to an oxidation treatment to form an oxide film by selective oxidation of the semiconductor surface parts not masked by the masking layer; and forming an element isolation region defined by the oxide film by removing the masking layer and the insulating film; wherein the extent to which the semiconductor substrate is etched during formation of the masking layer is from 0.4 to 0.6 of the thickness of the oxide film which defines the element isolation region.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a surface of a semiconductor substrate; providing a masking layer for preventing oxidation of the underlying semiconductor substrate surface, said masking layer comprising a polycrystalline silicon film directly disposed on the insulating film and a silicon nitride film covering upper and side walls of the polycrystalline silicon film, the masking layer being formed by forming the polycrystalline silicon film on the insulating film, forming a first silicon nitride film on the polycrystalline silicon film, successively subjecting the first silicon nitride film, the polycrystalline silicon film and the semiconductor substrate to selective etching, oxidizing the semiconductor substrate to form an oxide film on the sides of the polycrystalline silicon film and the surface of the semiconductor substrate, depositing a second silicon nitride film on the surface of the exposed portion of the semiconductor substrate, and subjecting the second silicon nitride film to anisotropic etching to form side wall spacers of the second silicon nitride film on the sides of the polycrystalline silicon film; subjecting the semiconductor substrate to an oxidation treatment to form an oxide film by selective oxidation of the semiconductor surface parts not masked by the masking layer; and forming an element isolation region defined by the oxide film by removing the masking layer and the insulating film; wherein the extent to which the semiconductor substrate is etched during formation of the masking layer is from 0.4 to 0.6 of the thickness of the oxide film which defines the element isolation region.

Claim 3

A method of manufacturing a semiconductor device comprising the steps of: providing a silicon semiconductor substrate; forming an insulating film on a surface of the substrate; disposing a polycrystalline silicon film directly on a portion of the insulating film and disposing a silicon nitride film covering an upper surface and side walls of the polycrystalline silicon film to mask the substrate surface thereunder during oxidation, the mask being formed by forming the polycrystalline silicon film on the insulating film, forming a first silicon nitride film on the polycrystalline silicon film, successively subjecting the first silicon nitride film, the polycrystalline silicon film and the semiconductor substrate to selective etching, oxidizing the semiconductor substrate to form an oxide film on the sides of the polycrystalline silicon film and the surface of the semiconductor substrate, depositing a second silicon nitride film on the surface of the exposed portion of the semiconductor substrate, and subjecting the second silicon nitride film to an anisotropic etching to form side wall spacers of the second silicon nitride film on the sides of the polycrystalline silicon film; oxidizing the semiconductor substrate by an oxidation treatment to selectively oxidize portions of the unmasked substrate surface; and forming an element isolation region defined by one of the oxidized portions by removing the mask and the insulating film; wherein the extent to which the semiconductor substrate is etched during formation of the mask is from 0.4 to 0.6 of the thickness of the oxidized portion which defines the element isolation region.

Claim 4

A method of manufacturing a semiconductor device comprising the steps of: providing a silicon semiconductor substrate; forming an insulating film on a surface of the substrate; disposing a polycrystalline silicon film directly on a portion of the insulating film and disposing a silicon nitride film covering an upper surface and side walls of the polycrystalline silicon film to mask the substrate surface thereunder during oxidation, the mask being formed by forming the polycrystalline silicon film on the insulating film, forming a first silicon nitride film on the polycrystalline silicon film, successively subjecting the first silicon nitride film, the polycrystalline silicon film and the semiconductor substrate to selective etching, oxidizing the semiconductor substrate to form an oxide film on the sides of the polycrystalline silicon film and the surface of the semiconductor substrate, depositing a second silicon nitride film on the surface of the exposed portion of the semiconductor substrate, and subjecting the second silicon nitride film to an anisotropic etching to form side wall spacers of the second silicon nitride film on the sides of the polycrystalline silicon film; oxidizing the semiconductor substrate by an oxidation treatment to selectively oxidize portions of the unmasked substrate surface; and forming an element isolation region defined by one of the oxidized portions by removing the mask and the insulating film; wherein the extent to which the semiconductor substrate is etched during formation of the mask is from 0.4 to 0.6 of the thickness of the oxidized portion which defines the element isolation region.