Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make the insulating film of gate oxide film, etc., to be formed on the surface of a substrate to have no defect when field oxide films are to be formed according to the selective oxidation method by a method wherein a polycrystalline silicon film is put between silicon nitride films to be used as the non- oxidizable film. CONSTITUTION:A silicon oxide film 2 is formed on the P type silicon substrate 1, and the first silicon nitride film 4 of the degree of 1,000Angstrom thickness, the polycrystalline silicon film 5 of 1,000Angstrom thickness and the second silicon nitride film 6 of 500Angstrom thickness are deposited in order to constitute the non-oxidizable film 3 according to the CVD method, for example. Then boron ion implanted layers 8 are formed in the substrate 1 of the field regions. After a resist film 7 is removed in succession, oxidation is performed in the wet oxygen atmosphere at 1,000 deg.C using the non-oxidizable film 3 as the mask to make the field oxide films 9 of 1.0mum thickness to grow. At this time, an oxidizing agent, namely steam and oxygen, or ammonia and nitrogen generated by reaction of the oxidizing agent and the silicon nitride film 4 are made to react with polycrystalline silicon 5 to prevent the substrate 1 from formation of a nitride on the surface.

Inventors

• 👤 Kikuo Yamabe
• 👤 紀久夫 山部

Bibliographic Details