Semiconductor memory and semiconductor device having SOI structure

Claim 2

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; and a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being supplied with a predetermined potential; wherein the potential supplied to said third impurity region is given, via at least one of said first and said second impurity region, to the body regions of the transistor regions of at least one of the two conductivity types, one conductivity type being that of said N-channel transistor regions, the other conductivity type being that of said P-channel transistor regions.

Claim 3

A semiconductor device according to claim 1, wherein at least one of said N-channel transistor regions and said first field shield region are surrounded by at least one of said P-channel transistor regions and by said second field shield region.

Claim 4

A semiconductor device according to claim 1, wherein at least one of said P-channel transistor regions and said second field shield region are surrounded by at least one of said N-channel transistor regions and by said first field shield region.

Claim 5

A semiconductor device according to claim 1, wherein a conductor is formed on each of said source and said drain region as well as on said third impurity region.

Claim 6

A semiconductor device according to claim 1, wherein a silicide layer is formed on each of said source and said drain region as well as on said third impurity region.

Claim 7

A semiconductor device according to claim 1, wherein said third impurity region is disposed to surround at least one of said first and said second field shield region.

Claim 8

A semiconductor device according to claim 6, wherein, of said N-channel transistor regions, of said P-channel transistor regions and of said first and said second field shield regions isolating the transistor regions from one another, those surrounded by said third impurity region constitute a memory cell array region.

Claim 9

A semiconductor device according to claim 1, wherein the periphery of said SOI substrate is formed by one of said first and said second field shield region.

Claim 10

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; a third and a fourth impurity region formed a predetermined distance apart in said SOI active layer between said first and said second impurity region, one of said third and said fourth impurity region being in contact with said first impurity region, the other of said third and said fourth impurity region being in contact with said second impurity region, said third and said fourth impurity region having a different conductivity type each; and a third field shield region composed of a fifth impurity region formed in said SOI active layer between said third and said fourth impurity region and of a third field shield gate electrode formed over said fifth impurity region, said third field shield region isolating said third impurity region from said fourth impurity region.

Claim 11

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; a third and a fourth impurity region formed a predetermined distance apart in said SOI active layer between said first and said second impurity region, one of said third and said fourth impurity region being in contact with said first impurity region, the other of said third and said fourth impurity region being in contact with said second impurity region, said third and said fourth impurity region having a different conductivity type each; and a third field shield region composed of a fifth impurity region formed in said SOI active layer between said third and said fourth impurity region and of a third field shield gate electrode formed over said fifth impurity region, said third field shield region isolating said third impurity region from said fourth impurity region.

Claim 12

A semiconductor device according to claim 9, wherein said third and said fourth impurity region are supplied with different potentials, at least one of said different potentials being given via at least one of said first and said second impurity region to the body regions of the transistor regions of at least one of the two conductivity types, one conductivity type being that of said N-channel transistor regions, the other conductivity type being that of said P-channel transistor regions.

Claim 13

A semiconductor device according to claim 9, wherein at least one of said N-channel transistor regions and said first field shield region are surrounded by at least one of said P-channel transistor regions and by said second field shield region.

Claim 14

A semiconductor device according to claim 9, wherein at least one of said P-channel transistor regions and said second field shield region are surrounded by at least one of said N-channel transistor regions and by said first field shield region.

Claim 15

A semiconductor device according to claim 9, wherein a conductor is formed on each of said source and said drain region as well as on said third and said fourth impurity region.

Claim 16

A semiconductor device according to claim 9, wherein a silicide layer is formed on each of said source and said drain region as well as on said third and said fourth impurity region.

Claim 17

A semiconductor device according to claim 9, wherein at least one of said third and said fourth impurity region is disposed to surround at least one of said first and said second field shield region.

Claim 18

A semiconductor device according to claim 15, wherein, of said N-channel transistor regions, of said P-channel transistor regions and of said first and said second field shield regions isolating the transistor regions from one another, those surrounded by at least said third and said fourth impurity region constitute a memory cell array region.

Claim 19

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; and a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being a region of one conductivity type, wherein said third impurity region is supplied with a predetermined potential, and wherein said predetermined potential fed to said third impurity region is given, via one of said first and said second impurity region, to the body regions of the transistor regions of at least one of the two conductivity types.

Claim 20

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; and a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being a region of one conductivity type, wherein said third impurity region is supplied with a predetermined potential, and wherein said predetermined potential fed to said third impurity region is given, via one of said first and said second impurity region, to the body regions of the transistor regions of at least one of the two conductivity types.

Claim 21

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; and a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being a region of one conductivity type, wherein at least one of aid N-channel transistor regions and said first field shield region are surrounded by at least one of said P-channel transistor regions and by said second field shield region.

Claim 22

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; and a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being a region of one conductivity type, wherein at least one of aid N-channel transistor regions and said first field shield region are surrounded by at least one of said P-channel transistor regions and by said second field shield region.

Claim 23

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; and a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being a region of one conductivity type, wherein at least one of said P-channel transistor regions and said second field shield region are surrounded by at least one of said N-channel transistor regions and by said first field shield region.

Claim 24

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; and a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being a region of one conductivity type, wherein at least one of said P-channel transistor regions and said second field shield region are surrounded by at least one of said N-channel transistor regions and by said first field shield region.

Claim 25

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being supplied with a first potential; and a fourth impurity region different in conductivity type from said third impurity region and formed in said SOI active region so that one of said first and said second field shield region is disposed between said third and said fourth impurity region, said fourth impurity region being supplied with a second potential; wherein said second potential supplied to said fourth impurity region is given, via the impurity region of one of said first and said second field shield region disposed between said third and said fourth impurity region, to the body regions of those transistor regions of one conductivity type which are isolated from one another by that one field shield region; and wherein said first potential supplied to said third impurity region is given, via the impurity region of the other one of said first and said second field shield region, to the body regions of the transistor regions of the other conductivity type.

Claim 26

A semiconductor device formed on an SOI substrate having an SOI active layer over an oxide film, said semiconductor device comprising: a plurality of N-channel transistor regions each having an N-channel transistor formed therein; and a plurality of P-channel transistor regions each having a P-channel transistor formed therein; wherein said N-channel transistor regions and said P-channel transistor regions each comprise: a pair of a source and a drain region formed a predetermined distance apart in said SOI active layer; and a body region formed between said source and said drain region in said SOI active layer; said semiconductor device further comprising: a first field shield region composed of a first impurity region formed in said SOI active layer and of a first field shield gate electrode formed over said first impurity region, said first field shield region isolating said N-channel transistor regions from one another; a second field shield region composed of a second impurity region formed in said SOI active layer and of a second field shield gate electrode formed over said second impurity region, said second field shield region isolating said P-channel transistor regions from one another; a third impurity region formed in said SOI active layer between said first and said second impurity region, said third impurity region being supplied with a first potential; and a fourth impurity region different in conductivity type from said third impurity region and formed in said SOI active region so that one of said first and said second field shield region is disposed between said third and said fourth impurity region, said fourth impurity region being supplied with a second potential; wherein said second potential supplied to said fourth impurity region is given, via the impurity region of one of said first and said second field shield region disposed between said third and said fourth impurity region, to the body regions of those transistor regions of one conductivity type which are isolated from one another by that one field shield region; and wherein said first potential supplied to said third impurity region is given, via the impurity region of the other one of said first and said second field shield region, to the body regions of the transistor regions of the other conductivity type.

Claim 27

A semiconductor device according to claim 20, wherein at least one of said N-channel transistor regions and said first field shield region are surrounded by at least one of said P-channel transistor regions and by said second field shield region.

Claim 28

A semiconductor device according to claim 20, wherein at least one of said P-channel transistor regions and said second field shield region are surrounded by at least one of said N-channel transistor regions and by said first field shield region.