CMOS structure with parasitic channel prevention

Claim 2

A semiconductor device, comprising: an integrated circuit having complementary type metal insulator semiconductor transistors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, the semiconductor single crystal silicon layer having at least a first region where an N-type MIS transistor is formed and a second region where a P-type MIS transistor is formed, wherein a thickness of the first region is different from a thickness of the second region in the semiconductor single crystal silicon layer.

Claim 3

The semiconductor device according to claim 1; wherein the thickness of the first region is larger than the thickness of the second region in the semiconductor single crystal silicon layer.

Claim 4

The semiconductor device according to claim 1; wherein the N-type MIS transistor has a source region and a drain region, and at least one of the bottoms of the source region and the drain region is separated from the electrically insulating layer by a predetermined distance to prevent the formation of a parasitic channel.

Claim 5

The semiconductor device according to claim 1; further comprising a thick silicon oxide layer for isolation formed around a P-type impurity region of the semiconductor single crystal silicon layer in which the N-type MIS transistor is formed, and a single crystal silicon layer interposed between the thick silicon oxide layer and the electrically insulating layer.

Claim 6

The semiconductor device according to claim 4; wherein an impurity concentration in the single crystal silicon layer is higher than that in the semiconductor single crystal silicon layer around which the thick silicon oxide is formed.

Claim 7

The semiconductor device according to claim 5; wherein an impurity in the single crystal silicon layer is a P-type impurity.

Claim 8

The semiconductor device according to claim 1; further comprising means for applying a negative voltage to the first region of the semiconductor single crystal silicon layer so as to prevent electrical interference between the complementary type metal insulator semiconductor transistors.

Claim 9

The semiconductor device according to claim 1; wherein the electrically insulating layer comprises a silicon oxide.

Claim 10

The semiconductor device according to claim 1; further comprising a single crystal silicon substrate provided on the electrically insulating layer so as to be opposite to the semiconductor single crystal silicon layer through the electrically insulating layer, wherein a thickness of the single crystal silicon substrate is larger than a thickness of the semiconductor single crystal silicon layer.

Claim 11

The semiconductor device according to claim 1; wherein the thickness of the semiconductor single crystal silicon layer is not larger than 4 μm.

Claim 12

The semiconductor device according to claim 1; wherein a semiconductor substrate having a structure which has thin single crystal silicon at the upper side with respect to the electrically insulating layer and thick single crystal silicon at the lower side is a bonded semiconductor substrate comprising two single crystal silicon wafers wherein one or both surfaces of the two single crystal silicon wafers is subjected to thermal oxidation to form a silicon oxide for bonding the two single crystal silicon wafers together, and one of the two single crystal silicon wafers is thinned to a desired thickness.

Claim 13

The semiconductor device according to claim 1; further comprising an insulating film formed on the semiconductor single crystal silicon layer being provided on the electrically insulating layer to form an isolation region for isolating the N-type MIS transistor and the P-type MIS transistor from each other, and an electrode made of at least one of polycrystalline and metal provided on the insulating film for applying an electric voltage to the electrode so as to prevent an inversion region from being formed in the semiconductor single crystal silicon layer.

Claim 14

The semiconductor device according to claim 1; further comprising an insulating film formed on the semiconductor single crystal silicon layer provided on the electrically insulating layer to form an isolation region for isolating the N-type MIS transistor and the P-type MIS transistor from each other, wherein a thickness of the semiconductor single crystal silicon layer is at least 0.1 μm.

Claim 15

A semiconductor device comprising: an integrated circuit having complementary type metal insulator semiconductor transistors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, the semiconductor single crystal silicon layer having at least a first region where an N-type MIS transistor is formed and a second region where a P-type MIS transistor is formed, wherein a thickness of the first region is the same as a thickness of the second region of the semiconductor single crystal silicon layer, the P-type MIS transistor has a source region and a drain region, the bottoms of both the source region and the drain region of the P-type MIS transistor being in contact with the electrically insulating layer, the N-type MIS transistor has a source region and a drain region, and the bottoms of both the source region and the drain region of the N-type MIS transistor being separated from the electrically insulating layer by a predetermined distance effective to prevent formation of a parasitic channel.

Claim 16

A semiconductor device comprising: an integrated circuit having complementary type metal insulator semiconductor transistors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, the semiconductor single crystal silicon layer having at least a first region where an N-type MIS transistor is formed and a second region where a P-type MIS transistor is formed, wherein a thickness of the first region is the same as a thickness of the second region of the semiconductor single crystal silicon layer, the P-type MIS transistor has a source region and a drain region, the bottoms of both the source region and the drain region of the P-type MIS transistor being in contact with the electrically insulating layer, the N-type MIS transistor has a source region and a drain region, and the bottoms of both the source region and the drain region of the N-type MIS transistor being separated from the electrically insulating layer by a predetermined distance effective to prevent formation of a parasitic channel.

Claim 17

The semiconductor device according to claim 14; further comprising a thick silicon oxide layer for isolation formed around a P-type impurity region of the semiconductor single crystal silicon layer in which the N-type MIS transistor is formed, and a single crystal silicon layer interposed between the thick silicon oxide layer and the electrically insulating layer.

Claim 18

The semiconductor device according to claim 15; wherein an impurity concentration in the single crystal silicon layer is higher than that in the semiconductor single crystal silicon layer around which the thick silicon oxide is formed.

Claim 19

The semiconductor device according to claim 16; wherein an impurity in the single crystal silicon layer is a P-type impurity.

Claim 20

The semiconductor device according to claim 14; wherein the electrically insulating layer comprises a silicon oxide.

Claim 21

The semiconductor device according to claim 14; further comprising a single crystal silicon substrate provided on the electrically insulating layer so as to be opposite to the semiconductor single crystal silicon layer through the electrically insulating layer, wherein a thickness of the single crystal silicon substrate is larger than a thickness of the semiconductor single crystal silicon layer.

Claim 22

The semiconductor device according to claim 14; wherein the thickness of the semiconductor single crystal silicon layer is not larger than 4 μm.

Claim 23

The semiconductor device according to claim 14; wherein a semiconductor substrate having a structure which has thin single crystal silicon at the upper side with respect to the electrically insulating layer and thick single crystal silicon at the lower side is a bonded semiconductor substrate comprising two single crystal silicon wafers wherein one or both surfaces of the two single crystal silicon wafers is subjected to thermal oxidation to form a silicon oxide .for bonding the two single crystal silicon wafers together, and one of the two single crystal silicon wafers is thinned to a desired thickness.

Claim 24

The semiconductor device according to claim 14; further comprising an insulating film formed on the semiconductor single crystal silicon layer provided on the electrically insulating layer to form an isolation region for isolating the N-type MIS transistor and the P-type MIS transistor from each other, wherein a thickness of the semiconductor single crystal silicon layer is at least 0.1 μm.

Claim 25

A semiconductor device comprising: an integrated circuit having complementary type metal insulator semiconductor transistors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, the semiconductor single crystal silicon layer having at least a first region where an N-type MIS transistor is formed and a second region where a P-type MIS transistor is formed, wherein a thickness of the first region is the same as a thickness of the second region of the semiconductor single crystal silicon layer, the N-type MIS transistor has a source region and a drain region, the bottoms of both the source region and the drain region being separated from the electrically insulating layer by a predetermined distance effective to prevent formation of a parasitic channel; and means for applying a negative voltage to the first type region of the semiconductor single crystal silicon layer so as to prevent electrical interference between the complementary type metal insulator semiconductor transistors.

Claim 26

A semiconductor device comprising: an integrated circuit having complementary type metal insulator semiconductor transistors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, the semiconductor single crystal silicon layer having at least a first region where an N-type MIS transistor is formed and a second region where a P-type MIS transistor is formed, wherein a thickness of the first region is the same as a thickness of the second region of the semiconductor single crystal silicon layer, the N-type MIS transistor has a source region and a drain region, the bottoms of both the source region and the drain region being separated from the electrically insulating layer by a predetermined distance effective to prevent formation of a parasitic channel; and means for applying a negative voltage to the first type region of the semiconductor single crystal silicon layer so as to prevent electrical interference between the complementary type metal insulator semiconductor transistors.

Claim 27

A semiconductor device, comprising: at least one integrated circuit having complementary type metal insulator semiconductors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, wherein a thickness of the semiconductor single crystal silicon layer in an isolation region is smaller than a thickness of the semiconductor single crystal silicon layer surrounded by the isolation region; and wherein an impurity concentration in the semiconductor single crystal silicon layer in the isolation region is higher than that in the semiconductor single crystal silicon layer surrounded by the isolation region effective to prevent a flow of current through the isolation region.

Claim 28

A semiconductor device, comprising: at least one integrated circuit having complementary type metal insulator semiconductors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, wherein a thickness of the semiconductor single crystal silicon layer in an isolation region is smaller than a thickness of the semiconductor single crystal silicon layer surrounded by the isolation region; and wherein an impurity concentration in the semiconductor single crystal silicon layer in the isolation region is higher than that in the semiconductor single crystal silicon layer surrounded by the isolation region effective to prevent a flow of current through the isolation region.

Claim 29

The semiconductor device according to claim 24; wherein the isolation region comprises an insulating film formed on the semiconductor single crystal silicon layer and an electrode formed on the insulating film for applying an electric voltage to prevent an inversion region from being formed in the semiconductor single crystal silicon layer.

Claim 30

The semiconductor device according to claim 24; wherein a thickness of the semiconductor single crystal silicon layer in the isolation region is at least 0.1 μm.

Claim 31

A semiconductor device, comprising: an integrated circuit having complementary type metal insulator semiconductor transistors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, the semiconductor single .crystal silicon layer having at least a first region where an N-type MIS transistor is formed and a second region where a P-type MIS transistor is formed, wherein a thickness of the first region is the same as a thickness of the second region of the semiconductor single crystal silicon layer, the N-type MIS transistor has a source region and a drain region, the bottoms of both the source region and the drain region being separated from the electrically insulating layer by a predetermined distance effective to prevent formation of a parasitic channel; an insulating film formed on the semiconductor single crystal silicon layer being provided on the electrically insulating layer to form an isolation region for isolating the N-type MIS transistor and the P-type MIS transistor from each other; a first electrode provided on the insulating film over the first region for applying a first electric voltage; and a second electrode provided on the insulating film over the second region for applying a second electric voltage having opposite polarity to the first electric voltage so as to prevent an inversion region from being formed in the semiconductor single crystal silicon layer.

Claim 32

A semiconductor device, comprising: an integrated circuit having complementary type metal insulator semiconductor transistors, the integrated circuit being formed in a semiconductor single crystal silicon layer provided on an electrically insulating layer, the semiconductor single .crystal silicon layer having at least a first region where an N-type MIS transistor is formed and a second region where a P-type MIS transistor is formed, wherein a thickness of the first region is the same as a thickness of the second region of the semiconductor single crystal silicon layer, the N-type MIS transistor has a source region and a drain region, the bottoms of both the source region and the drain region being separated from the electrically insulating layer by a predetermined distance effective to prevent formation of a parasitic channel; an insulating film formed on the semiconductor single crystal silicon layer being provided on the electrically insulating layer to form an isolation region for isolating the N-type MIS transistor and the P-type MIS transistor from each other; a first electrode provided on the insulating film over the first region for applying a first electric voltage; and a second electrode provided on the insulating film over the second region for applying a second electric voltage having opposite polarity to the first electric voltage so as to prevent an inversion region from being formed in the semiconductor single crystal silicon layer.