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US5633527A
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Unitary lens semiconductor device
Assignee: National Technology and Engineering Solutions of Sandia LLC
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Filing: 1995-02-06
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Granted: 1997-05-27
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Expires: 2015-02-06
Abstract
Abstract A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.
Inventors
- 👤 Kevin L. Lear
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:08
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12004; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0267; H01S5/10; H01S5/18; H01S5/183; H01S5/18386; H01S5/18388; H10F; H10F77/00; H10F77/40; H10F77/413; H10H20/814; H10H20/8142; G02B2006/12083; G02B2006/12102; G02B2006/12121; H01S5/18308; H01S5/18311; H01S5/18322; H01S5/18327; H01S5/1833; H01S5/18333; H01S5/18361; H01S5/18369; H01S5/18372; H01S5/20; H01S5/22; H01S5/2205
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
89 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having at least one semiconductor layer thereon, the semiconductor layer having a composition varying Continuously or in discrete steps in a direction normal to an upper surface of the substrate; and (b) a lower-refractive-index portion formed in the semiconductor layer and extending downward below the upper surface of the semiconductor layer to form a lens having a curved shape defined, at least in part, by the variation in composition of the semiconductor layer for redirecting or focusing light rays.
Claim 2
Dependent Claim
89 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having at least one semiconductor layer thereon, the semiconductor layer having a composition varying Continuously or in discrete steps in a direction normal to an upper surface of the substrate; and (b) a lower-refractive-index portion formed in the semiconductor layer and extending downward below the upper surface of the semiconductor layer to form a lens having a curved shape defined, at least in part, by the variation in composition of the semiconductor layer for redirecting or focusing light rays.
Claim 3
Dependent Claim
90 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having an upper surface; (b) at least one semiconductor layer above the substrate, the semiconductor layer having a composition varying continuously or stepwise in a direction normal to the upper surface; and (c) a mesa formed within the semiconductor layer, the mesa having at least one sidewall wherefrom a lower-refractive-index portion of the semiconductor layer extends laterally inward to form a lens having a curved shape defined, at least in part, by the variation in composition of the semiconductor layer.
Claim 4
Dependent Claim
90 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having an upper surface; (b) at least one semiconductor layer above the substrate, the semiconductor layer having a composition varying continuously or stepwise in a direction normal to the upper surface; and (c) a mesa formed within the semiconductor layer, the mesa having at least one sidewall wherefrom a lower-refractive-index portion of the semiconductor layer extends laterally inward to form a lens having a curved shape defined, at least in part, by the variation in composition of the semiconductor layer.
Claim 5
Dependent Claim
24 words
The unitary lens semiconductor device of claim 1 wherein the lens shape is further defined by a patterned mask layer above the lower-refractive-index portion.
Claim 6
Dependent Claim
25 words
The unitary lens semiconductor device of claim 1 wherein the semiconductor layer comprises an aluminum alloy, and the lower-refractive-index portion is an oxide of aluminum.
Claim 7
Dependent Claim
28 words
The unitary lens semiconductor device of claim 4 wherein the aluminum alloy includes at least one element selected from the group consisting of As, Ga, In, and P.
Claim 8
Dependent Claim
22 words
The unitary lens semiconductor device of claim 2 wherein the lens shape is further defined by a shape of the mesa sidewall.
Claim 9
Dependent Claim
25 words
The unitary lens semiconductor device of claim 2 wherein the semiconductor layer comprises an aluminum alloy, and the lower-refractive-index portion is an oxide of aluminum.
Claim 10
Dependent Claim
28 words
The unitary lens semiconductor device of claim 7 wherein the aluminum alloy includes at least one element selected from the group consisting of As, Ga, In, and P.
Claim 11
Dependent Claim
30 words
The unitary lens semiconductor device of claim 2 wherein at least one of the semiconductor layers comprises a plurality of sub-layers, and the semiconductor composition is different in adjacent sub-layers.
Claim 12
Dependent Claim
16 words
The unitary lens semiconductor device of claim 9 wherein the sub-layers are separated by spacer layers.
Claim 13
Dependent Claim
80 words
A unitary lens semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of semiconductor layers grown above the substrate further comprising a light-active region having a semiconductor junction therein and at least one lens-forming region, the lens-forming region having a semiconductor composition varying continuously or stepwise in the growth direction and including a lower-refractive-index portion having a curved shape to define a unitary lens; and (c) electrodes above and below the semiconductor junction for electrically activating the light-active region.
Claim 14
Dependent Claim
80 words
A unitary lens semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of semiconductor layers grown above the substrate further comprising a light-active region having a semiconductor junction therein and at least one lens-forming region, the lens-forming region having a semiconductor composition varying continuously or stepwise in the growth direction and including a lower-refractive-index portion having a curved shape to define a unitary lens; and (c) electrodes above and below the semiconductor junction for electrically activating the light-active region.
Claim 15
Dependent Claim
48 words
The unitary lens semiconductor device of claim 11 further comprising a mesa extending downward at least partially into the lens-forming region, the mesa having at least one sidewall wherefrom the lower-refractive-index portion extends laterally inward, the inward lateral extent of the lower-refractive-index portion varying in the growth direction.
Claim 16
Dependent Claim
31 words
The unitary lens semiconductor device of claim 12 wherein the inward lateral extent of the lower-refractive-index portion is defined at least in part by the semiconductor composition in the lens-forming region.
Claim 17
Dependent Claim
25 words
The unitary lens semiconductor device of claim 11 wherein the lens-forming region comprises an aluminum alloy, and the lower-refractive-index portion is an oxide of aluminum.
Claim 18
Dependent Claim
28 words
The unitary lens semiconductor device of claim 14 wherein the aluminum alloy includes at least one element selected from the group consisting of As, Ga, In, and P.
Claim 19
Dependent Claim
49 words
The unitary lens semiconductor device of claim 11 wherein the lens-forming region comprises at least two of the plurality of semiconductor layers, with the semiconductor layers of the lens-forming region each having a fixed semiconductor composition therein, and the semiconductor composition varying from one layer to an adjacent layer.
Claim 20
Dependent Claim
38 words
The unitary lens semiconductor device of claim 11 wherein one of the electrodes is located on a top surface of the unitary lens, and the unitary lens defines a current channel from the electrode to the light-active region.
Claim 21
Dependent Claim
20 words
The unitary lens semiconductor device of claim 17 wherein the current channel defines a light-active area of the light-active region.
Claim 22
Dependent Claim
42 words
The unitary lens semiconductor device of claim 11 whereto the semiconductor junction is formed from a pair of cladding layers surrounding an active layer, one of the cladding layers having a p-type dopant, and the other cladding layer having an n-type dopant.
Claim 23
Dependent Claim
18 words
The unitary lens semiconductor device of claim 19 wherein the active layer comprises at least one quantum-well layer.
Claim 24
Dependent Claim
31 words
The unitary lens semiconductor device of claim 20 wherein the quantum-well layer is comprised of a compound semiconductor selected from the group consisting of III-V compound semiconductors anti II-VI compound semiconductors.
Claim 25
Dependent Claim
34 words
The unitary lens semiconductor device of claim 21 wherein the quantum-well layer is comprised of a III-V compound semiconductor selected from the group consisting of InGaAs, GaAs, AlGaAs, AlGalnP, InGaP, InGaAsP, AlGaAsP, and InAlGaAs.
Claim 26
Dependent Claim
18 words
The unitary lens semiconductor device of claim 11 wherein the semiconductor junction is forward-biased for generating light therein.
Claim 27
Dependent Claim
20 words
The unitary lens semiconductor device of claim 23 wherein the unitary lens collimates the light generated in the semiconductor junction.
Claim 28
Dependent Claim
25 words
The unitary lens semiconductor device of claim 23 wherein the unitary lens focuses the light generated in the semiconductor junction at a focal point therefrom.
Claim 29
Dependent Claim
23 words
The unitary lens semiconductor device of claim 23 further comprising a pair of stack mirrors surrounding the semiconductor junction forming a resonant cavity.
Claim 30
Dependent Claim
28 words
The unitary lens semiconductor device of claim 26 wherein the resonant cavity surrounding the semiconductor junction in combination with the light active region forms a resonant-cavity light-emitting diode.
Claim 31
Dependent Claim
27 words
The unitary lens semiconductor device of claim 26 wherein the resonant cavity surrounding the semiconductor junction in combination with the light-active region forms a vertical-cavity surface-emitting laser.
Claim 32
Dependent Claim
18 words
The unitary lens semiconductor device or claim 26 wherein the unitary lens is located outside the resonant cavity.
Claim 33
Dependent Claim
18 words
The unitary lens semiconductor device of claim 26 wherein the unitary lens is located within the resonant cavity.
Claim 34
Dependent Claim
22 words
The unitary lens semiconductor device of claim 30 wherein the unitary lens provides means for defining a lateral mode for the light.
Claim 35
Dependent Claim
18 words
The unitary lens semiconductor device of claim 11 wherein the semiconductor junction is reverse-biased for detecting light therein.
Claim 36
Dependent Claim
26 words
The unitary lens semiconductor device of claim 32 further comprising a pair of stack mirrors surrounding the active region and forming in combination a resonant-cavity photodetector.
Claim 37
Dependent Claim
127 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having an upper surface and a lower surface; (b) at least one semiconductor layer above the upper surface of the substrate, the semiconductor layer having a composition varying continuously or stepwise along an optical axis normal to the upper surface and a lower-refractive-index portion extending downward into the semiconductor layer to provide a curved surface that defines at least one unitary lens for redirecting light rays; (c) a light-active region formed below the lower surface of the substrate and having a semiconductor junction therein, the light-active region having at least one light-active area centered about an optical axis of each unitary lens; and (d) electrodes above and below the semiconductor junction for electrically activating the light-active region.
Claim 38
Dependent Claim
127 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having an upper surface and a lower surface; (b) at least one semiconductor layer above the upper surface of the substrate, the semiconductor layer having a composition varying continuously or stepwise along an optical axis normal to the upper surface and a lower-refractive-index portion extending downward into the semiconductor layer to provide a curved surface that defines at least one unitary lens for redirecting light rays; (c) a light-active region formed below the lower surface of the substrate and having a semiconductor junction therein, the light-active region having at least one light-active area centered about an optical axis of each unitary lens; and (d) electrodes above and below the semiconductor junction for electrically activating the light-active region.
Claim 39
Dependent Claim
43 words
The unitary lens semiconductor device of claim 34 further comprising at least one mesa extending downward at least partially into the semiconductor layer, each mesa having at least one sidewall wherefrom the lower-refractive-index portion extends laterally inward to further define the unitary lens.
Claim 40
Dependent Claim
26 words
The unitary lens semiconductor device of claim 35 wherein the inward lateral extent of the lower-refractive-index portion is defined by the composition of the semiconductor layer.
Claim 41
Dependent Claim
25 words
The unitary lens semiconductor device of claim 34 wherein the downward extent of the lower-refractive-index portion is defined by the composition of the semiconductor layer.
Claim 42
Dependent Claim
25 words
The unitary lens semiconductor device of claim 34 wherein the semiconductor layer comprises an aluminum alloy, and the lower-refractive-index portion is an oxide of aluminum.
Claim 43
Dependent Claim
28 words
The unitary lens semiconductor device of claim 38 wherein the aluminum alloy includes at least one element selected from the group consisting of As, Ga, In, and P.
Claim 44
Dependent Claim
17 words
The unitary lens semiconductor device of claim 34 wherein the semiconductor junction is forward-biased for generating light.
Claim 45
Dependent Claim
17 words
The unitary lens semiconductor device of claim 34 wherein the semiconductor junction is reverse-biased for detecting light.
Claim 46
Dependent Claim
66 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having a semiconductor layer thereon; and (b) a lens formed in the semiconductor layer below a substantially planar outer surface of the layer and further having a curved shape defined, at least in part, by a continuous or stepwise variation in composition of the layer in a direction normal to the outer surface of the layer.
Claim 47
Dependent Claim
66 words
A unitary lens semiconductor device comprising: (a) a transparent substrate having a semiconductor layer thereon; and (b) a lens formed in the semiconductor layer below a substantially planar outer surface of the layer and further having a curved shape defined, at least in part, by a continuous or stepwise variation in composition of the layer in a direction normal to the outer surface of the layer.
Claim 48
Dependent Claim
27 words
The unitary lens semiconductor device of claim 42 wherein the shape of the lens is further defined by a patterned mask layer provided above the semiconductor layer.
Claim 49
Dependent Claim
15 words
The unitary lens semiconductor device of claim 42 wherein the lens is a positive lens.
Claim 50
Dependent Claim
15 words
The unitary lens semiconductor device of claim 42 wherein the lens is a negative lens.
Claim 51
Dependent Claim
51 words
A unitary lens semiconductor device comprising: (a) a transparent substrate; and (b) a semiconductor layer disposed on the substrate and including a lower-refractive-index portion therein, the lower-refractive-index portion having an outer surface that is substantially planar and an inner surface that is curved to define a lens within the semiconductor layer.
Claim 52
Dependent Claim
51 words
A unitary lens semiconductor device comprising: (a) a transparent substrate; and (b) a semiconductor layer disposed on the substrate and including a lower-refractive-index portion therein, the lower-refractive-index portion having an outer surface that is substantially planar and an inner surface that is curved to define a lens within the semiconductor layer.
Claim 53
Dependent Claim
17 words
The unitary lens semiconductor device of claim 46 wherein a curvature of the inner surface is continuous.
Claim 54
Dependent Claim
20 words
The unitary lens semiconductor device of claim 46 wherein a curvature of the inner surface comprises a plurality of steps.
Claim 55
Dependent Claim
25 words
The unitary lens semiconductor device of claim 46 wherein the semiconductor layer comprises an aluminum alloy, and the lower-refractive-index portion comprises an oxide of aluminum.
Claim 56
Dependent Claim
28 words
The unitary lens semiconductor device of claim 49 wherein the aluminum alloy includes at least one element selected from the group consisting of As, Ga, In and P.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-05-26 | 2000-11-25 | 2001-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-05-26 | 2004-11-25 | 2005-05-27 | $3760.00 | Window Closed / Lapsed |
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