US5262360A
Expired / Lapsed
US
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AlGaAs native oxide
Assignee: University of Illinois System
•
Filing: 1991-06-24
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Granted: 1993-11-16
•
Expires: 2011-06-24
Abstract
Abstract A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 DEG C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
Inventors
- 👤 Nick Holonyak, Jr.
- 👤 John M. Dallesasse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H01; H01S; H01S5/00; H01S5/20; H01S5/2054; H01S5/2059; H01S5/22; H01S5/2205; H01S5/2214; H01S5/2215; H01S5/40; H01S5/4025; H01S5/4031; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/116; Y10S148/117; Y10S148/118
Claims Analysis
Total Claims: 70
Claim 1
Independent Claim
83 words
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material which comprises exposing an aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375° C. to convert at least a portion of said aluminum-bearing Group III-V semiconductor material to a native oxide, the thickness of said native oxide being about 1.1 times the thickness of or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted.
Claim 2
Independent Claim
83 words
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material which comprises exposing an aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375° C. to convert at least a portion of said aluminum-bearing Group III-V semiconductor material to a native oxide, the thickness of said native oxide being about 1.1 times the thickness of or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein the thickness of said native oxide is between about 0.6 to about 1.1 times the thickness of said aluminum-bearing Group III-V semiconductor material thus converted.
Claim 4
Dependent Claim
30 words
The method of claim 2 wherein the thickness of said native oxide is about 0.7 to about 1.0 times the thickness of said aluminum-bearing Group III-V semiconductor material thus converted.
Claim 5
Dependent Claim
30 words
The method of claim 3 wherein the thickness of said native oxide is about 0.8 to about 0.95 times the thickness of said aluminum-bearing Group III-V semiconductor material thus converted.
Claim 6
Dependent Claim
30 words
The method of claim 4 wherein the thickness of said native oxide is about 0.85 to about 0.9 times the thickness of said aluminum-bearing Group III-V semiconductor material thus converted.
Claim 7
Dependent Claim
16 words
The method of claim 1 wherein said water-containing environment comprises water vapor and an inert gas.
Claim 8
Dependent Claim
17 words
The method of claim 6 wherein said water-containing environment comprises nitrogen gas substantially saturated with water vapor.
Claim 9
Dependent Claim
22 words
The method of claim 7 wherein said nitrogen has a flow rate of at least about 0.5 standard cubic feet per hour.
Claim 10
Dependent Claim
20 words
The method of claim 8 wherein said flow rate is about 1.0 to about 2.0 standard cubic feet per hour.
Claim 11
Dependent Claim
16 words
The method of claim 1 wherein said temperature is about 375° C. to about 600° C.
Claim 12
Dependent Claim
16 words
The method of claim 10 wherein said temperature is about 390° C. to about 500° C.
Claim 13
Dependent Claim
16 words
The method of claim 11 wherein said temperature is about 400° C. to about 450° C.
Claim 14
Dependent Claim
34 words
The method of claim 10 wherein said exposing of said aluminum-bearing Group III-V semiconductor material to said water-containing environment and said temperature is for a time of about 0.1 hour to about 6.0 hours.
Claim 15
Dependent Claim
16 words
The method of claim 13 wherein said time is about 0.1 hour to about 5.0 hours.
Claim 16
Dependent Claim
15 words
The method of claim 14 wherein said time is about 2.0 to about 4.0 hours.
Claim 17
Dependent Claim
12 words
The method of claim 15 wherein said time is about 3.0 hours.
Claim 18
Dependent Claim
20 words
The method of claim 1 wherein said temperature is in the range of about 600° C. to about 1100° C.
Claim 19
Dependent Claim
16 words
The method of claim 17 wherein said temperature is about 650° C. to about 1000° C.
Claim 20
Dependent Claim
16 words
The method of claim 18 wherein said temperature is about 700° C. to about 900° C.
Claim 21
Dependent Claim
12 words
The method of claim 19 wherein said temperature is about 800° C.
Claim 22
Dependent Claim
32 words
The method of claim 17 wherein said exposing of said aluminum-bearing Group III-V semiconductor material to said water-containing environment and said temperature is for a time of up to about 120 seconds.
Claim 23
Dependent Claim
16 words
The method of claim 21 wherein said time is about 5 seconds to about 90 seconds.
Claim 24
Dependent Claim
16 words
The method of claim 22 wherein said time is about 10 seconds to about 60 seconds.
Claim 25
Dependent Claim
15 words
The method of claim 23 wherein said time is about 15 to about 30 seconds.
Claim 26
Dependent Claim
15 words
The method of claim 1 wherein the native oxide is substantially free of aluminum hydroxides.
Claim 27
Dependent Claim
16 words
The method of claim 1 wherein the native oxide is comprised primarily of dehydrated aluminum compounds.
Claim 28
Dependent Claim
20 words
The method of claim 26 wherein at least one of said dehydrated aluminum compounds is β-Al 2 O 3 .
Claim 29
Dependent Claim
16 words
The method of claim 26 wherein at least one of said dehydrated aluminum compounds is diaspore.
Claim 30
Dependent Claim
15 words
The method of claim 1 wherein said native oxide is substantially free of aluminum suboxides.
Claim 31
Dependent Claim
16 words
The method of claim 1 wherein said native oxide is substantially free of aluminum oxide hydrates.
Claim 32
Dependent Claim
23 words
The method of claim 1 wherein said aluminum-bearing Group III-V semiconductor material has the formula AlGaAs, AlInP, AlGaP, AlGaAsP, AlGaAsSb, InAlGaP or InAlGaAs.
Claim 33
Dependent Claim
14 words
The method of claim 1 wherein said native oxide is substantially clear and transparent.
Claim 34
Dependent Claim
23 words
The method of claim 1 wherein said aluminum-bearing Group III-V semiconductor material is overlaid on a surface of aluminum-free Group III-V semiconductor substrate.
Claim 35
Dependent Claim
32 words
The method of claim 33 wherein said conversion of said overlaid aluminum-bearing Group III-V semiconductor material to said native oxide substantially terminates at the surface of said aluminum-free Group III-V semiconductor substrate.
Claim 36
Independent Claim
97 words
A method of forming a native oxide from Al x Ga l-x As wherein x is about 0.7 or greater which comprises exposing an Al x Ga l-x As semiconductor material wherein x is about 0.7 or greater to an atmosphere of nitrogen and water vapor and a temperature of between about 400° to about 450° C. to convert at least a portion of said semiconductor material to a native oxide having a thickness substantially the same as or less than the thickness of that portion of said Al x Ga l-x As semiconductor material thus converted.
Claim 37
Independent Claim
97 words
A method of forming a native oxide from Al x Ga l-x As wherein x is about 0.7 or greater which comprises exposing an Al x Ga l-x As semiconductor material wherein x is about 0.7 or greater to an atmosphere of nitrogen and water vapor and a temperature of between about 400° to about 450° C. to convert at least a portion of said semiconductor material to a native oxide having a thickness substantially the same as or less than the thickness of that portion of said Al x Ga l-x As semiconductor material thus converted.
Claim 38
Dependent Claim
32 words
The method of claim 35 wherein said nitrogen is substantially saturated with said water vapor and has a flow rate of between about 1.0 to about 3.0 standard cubic feet per hour.
Claim 39
Dependent Claim
17 words
The method of claim 35 wherein said exposure is for a time period of about 3.0 hours.
Claim 40
Dependent Claim
16 words
The method of claim 35 wherein said native oxide is comprised primarily of dehydrated aluminum compounds.
Claim 41
Independent Claim
111 words
A method of forming a native oxide from Al x Ga l-x As wherein x is about 0.7 or greater which comprises exposing an Al x Ga l-x As semiconductor material wherein x is about 0.7 or greater to an atmosphere of nitrogen and water vapor and a temperature in the range of over about 600° C. to about 1100° C. for a time period of up to about 60 seconds to convert at least a portion of said semiconductor material to a native oxide having a thickness substantially the same as or less than the thickness of that portion of said Al x Ga l-x As semiconductor material thus converted.
Claim 42
Independent Claim
111 words
A method of forming a native oxide from Al x Ga l-x As wherein x is about 0.7 or greater which comprises exposing an Al x Ga l-x As semiconductor material wherein x is about 0.7 or greater to an atmosphere of nitrogen and water vapor and a temperature in the range of over about 600° C. to about 1100° C. for a time period of up to about 60 seconds to convert at least a portion of said semiconductor material to a native oxide having a thickness substantially the same as or less than the thickness of that portion of said Al x Ga l-x As semiconductor material thus converted.
Claim 43
Dependent Claim
31 words
The method of claim 39 wherein said nitrogen is substantially saturated with water vapor and has a flow rate of between about 1.0 to about 3.0 standard cubic feet per hour.
Claim 44
Dependent Claim
16 words
The method of claim 39 wherein said time period is about 15 to about 30 seconds.
Claim 45
Dependent Claim
16 words
The method of claim 39 wherein said native oxide is comprised primarily of dehydrated aluminum compounds.
Claim 46
Dependent Claim
16 words
The method of claim 1 further comprising drying said native oxide in the absence of water.
Claim 47
Dependent Claim
13 words
The method of claim 43 wherein said drying is in dry inert gas.
Claim 48
Dependent Claim
12 words
The method of claim 44 wherein said inert gas is dry nitrogen.
Claim 49
Dependent Claim
21 words
The method of claim 44 wherein said drying is at a temperature range of between about 375° C. and 500° C.
Claim 50
Dependent Claim
17 words
The method of claim 44 wherein said temperature range is between about 400° C. and 450° C.
Claim 51
Dependent Claim
39 words
The method of claim 43 wherein said drying is performed after exposing said aluminum-bearing Group III-V semiconductor material to said water-containing environment and said temperature of at least about 375° C. for a time period of about 0.25 hour.
Claim 52
Dependent Claim
16 words
The method of claim 48 wherein said drying is for a time of about 2 hours.
Claim 53
Dependent Claim
11 words
The method of claim 1 further comprising annealing said native oxide.
Claim 54
Dependent Claim
16 words
The method of claim 50 wherein said native oxide is sealed in an ampoule during annealing.
Claim 55
Dependent Claim
13 words
The method of claim 51 wherein said ampoule has an overpressure of arsenic.
Claim 56
Dependent Claim
13 words
The method of claim 52 wherein said ampoule has an overpressure of phosphorous.
Claim 57
Dependent Claim
31 words
The method of claim 50 wherein said annealing is in the absence of water and is at a temperature in the range of between about 500° C. to about 850° C.
Claim 58
Dependent Claim
16 words
The method of claim 54 wherein said annealing is at a temperature of about 850° C.
Claim 59
Dependent Claim
21 words
The method of claim 50 wherein said annealing is for a time period of about 0.25 hour to about 4 hours.
Claim 60
Dependent Claim
24 words
The method of claim 46 wherein said drying temperature is ramped upward within said range of between about 375° C. to about 500° C.
Claim 61
Dependent Claim
24 words
The method of claim 46 wherein said drying temperature is ramped downward within said range of between about 375° C. to about 500° C.
Claim 62
Dependent Claim
24 words
The method of claim 54 wherein said annealing temperature is ramped upward within said range of between about 500° C. to about 850° C.
Claim 63
Dependent Claim
24 words
The method of claim 54 wherein said annealing temperature is ramped downward within said range of between about 500° C. to about 850° C.
Claim 64
Dependent Claim
31 words
The method of claim 1 wherein said temperature is ramped upward from at least about 375° C. during the exposing of said aluminum-bearing Group III-V semiconductor material to said water-containing environment.
Claim 65
Dependent Claim
34 words
The method of claim 61 wherein said temperature is ramped upward from at least 375° C. to about 600° C. and said exposing is for a time of about 2 to about 4 hours.
Claim 66
Dependent Claim
35 words
The method of claim 61 wherein said temperature is ramped upward from over about 600° C. to about 1100° C. and said exposing is for a time of about 15 seconds to about 30 seconds.
Claim 67
Dependent Claim
27 words
The method of claim 17 further comprising heating said aluminum-bearing Group III-V semiconductor material to said temperature in a heating time of about 2 seconds or less.
Claim 68
Dependent Claim
15 words
The method of claim 64 wherein said heating time is about 1 second or less.
Claim 69
Dependent Claim
13 words
The method of claim 64 wherein said heating starts at about room temperature.
Claim 70
Dependent Claim
25 words
The method of claim 17 wherein said native oxide forms at a rate of about 0.1 μm for about every 15 seconds of said exposing.
References Cited (Backward Citations)
US3914465A
Cited
US3890169A
Cited
US3859178A
Cited
US3969164A
Cited
US4176206A
Cited
US4116722A
Cited
US4172906A
Cited
US4144634A
Cited
EP0008898A1
Cited
US4216036A
Cited
US4291327A
Cited
US4374867A
Cited
JPS642318A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-15 | 2001-05-17 | 2001-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-15 | 2005-05-17 | 2005-11-16 | $7700.00 | Window Closed / Lapsed |