US4216036A
Expired / Lapsed
US
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Self-terminating thermal oxidation of Al-containing group III-V compound layers
Assignee: AT&T Inc
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Filing: 1978-08-28
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Granted: 1980-08-05
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Expires: 1998-08-28
Abstract
Abstract An oxide layer (16') is formed on a GaAs body (14) by epitaxially growing a layer (12) of Al x Ga 1-x As layer on a major surface (18) of the body and then thermally oxidizing the Al x Ga 1-x As layer for a time period effective to convert it to an oxide. The oxidizing process is essentially self-terminating at the major surface 18. The application of this process to the fabrication of MOS capacitors and IGFETs is described.
Inventors
- 👤 Won-Tien Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01358; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; Y; Y10; Y10S; Y10S438/00; Y10S438/936
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
65 words
A method of forming an oxide layer (16') on a major surface of non-Al-containing Group III-V compound body (14) characterized by the steps of: (a) forming an Al-containing Group III-V compound layer (16) on said major surface; and (b) thermally oxidizing said Al-containing layer for a time period sufficient to convert said layer to an oxide layer, said oxidizing being essentially selfterminating at said surface.
Claim 2
Independent Claim
65 words
A method of forming an oxide layer (16') on a major surface of non-Al-containing Group III-V compound body (14) characterized by the steps of: (a) forming an Al-containing Group III-V compound layer (16) on said major surface; and (b) thermally oxidizing said Al-containing layer for a time period sufficient to convert said layer to an oxide layer, said oxidizing being essentially selfterminating at said surface.
Claim 3
Dependent Claim
37 words
The method of claim 1 wherein said forming step (a) is further characterized by grading the Al composition of said layer so that the Al content near said surface is smaller than that farther from said surface.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein said oxidizing step (b) is performed in the presence of water vapor.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein said oxidizing step (b) is performed in the absence of water vapor.
Claim 6
Independent Claim
67 words
A method of forming an oxide layer on a major surface of a non-Al-containing Group III-V compound body characterized by the steps of: (a) forming an Al x Ga 1-x As layer on said major surface; and (b) thermally oxidizing said Al x Ga 1-x As for a time period sufficient to convert said layer to an oxide layer, said oxidizing being essentially self-terminating at said surface.
Claim 7
Independent Claim
67 words
A method of forming an oxide layer on a major surface of a non-Al-containing Group III-V compound body characterized by the steps of: (a) forming an Al x Ga 1-x As layer on said major surface; and (b) thermally oxidizing said Al x Ga 1-x As for a time period sufficient to convert said layer to an oxide layer, said oxidizing being essentially self-terminating at said surface.
Claim 8
Dependent Claim
41 words
The method of claim 5 wherein said forming step (a) is further characterized by grading the Al composition of said Al x Ga 1-x As layer so that the value of x near said surface is smaller than that farther therefrom.
Claim 9
Dependent Claim
17 words
The method of claim 6 wherein said compositions is graded from x≃0.35-0.40 near said surface to x≃1.0.
Claim 10
Dependent Claim
23 words
The method of claim 7 wherein said forming step (a) includes forming an AlAs layer on said Al x Ga 1-x As layer.
Claim 11
Independent Claim
22 words
The method of claims 5, 6, 7 or 8 wherein said oxidizing step (b) is performed in the presence of water vapor.
Claim 12
Dependent Claim
21 words
The method of claim 9 wherein said oxidizing step is performed in a flowing gas mixture of nitrogen and predominantly oxygen.
Claim 13
Independent Claim
22 words
The method of claims 5, 6, 7 or 8 wherein said oxidizing step (b) is performed in the absence of water vapor.
Claim 14
Dependent Claim
21 words
The method of claim 11 wherein said oxidizing step is performed in a flowing gas mixture of nitrogen and predominantly oxygen.
Claim 15
Dependent Claim
43 words
The method of claim 5 wherein said oxide layer is to have a thickness d ox and said forming step (a) is effective to epitaxially grow said Al x Ga 1-x As layer to a thickness of approximately d ox /1.8 when x≃1.0.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-08-05 | 1984-02-04 | 1984-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-08-05 | 1988-02-04 | 1988-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-08-05 | 1992-02-04 | 1992-08-05 | $7700.00 | Window Closed / Lapsed |