US4116722A
Expired / Lapsed
US
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Method for manufacturing compound semiconductor devices
Assignee: Toshiba Corp
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Filing: 1977-08-18
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Granted: 1978-09-26
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Expires: 1997-08-18
Abstract
Abstract A method for manufacturing compound semiconductor devices includes a step of forming a first oxidized film on a GaAs body and heating it at a high temperature. A second oxidized film is thereafter formed on the body which includes the first oxidized film so as to change it properties, for example, to be easily etched with an etchant.
Inventors
- 👤 Kiyoo Kamei
- 👤 Toshiaki Ikoma
- 👤 Hirokuni Tokuda
- 👤 Jeffrey Frey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:47
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10D; H10D30/00; H10D30/80; H10D30/87; H10P14/61; H10P14/6324
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
58 words
A method for manufacturing a semiconductor device comprising a step of preparing a compound semiconductor body, forming an oxidized film on a surface of said body by oxidizing said surface, heating said body with said oxidized film formed thereon, and forming an anodized film including said oxidized film on the surface of said body by anodizing said surface.
Claim 2
Independent Claim
58 words
A method for manufacturing a semiconductor device comprising a step of preparing a compound semiconductor body, forming an oxidized film on a surface of said body by oxidizing said surface, heating said body with said oxidized film formed thereon, and forming an anodized film including said oxidized film on the surface of said body by anodizing said surface.
Claim 3
Dependent Claim
25 words
A method according to claim 1 further comprising a step of removing said anodized film from said compound semiconductor body by etching with an etchant.
Claim 4
Dependent Claim
56 words
A method according to claim 1 wherein said step for forming said oxidizing film is a process for forming an oxidized film selectively on said surface of said compound semiconductor body, and said heating step is a process for creating a diffused area by diffusing impurities in said body with said oxidized film as a mask.
Claim 5
Dependent Claim
67 words
A method according to claim 3 wherein said step of preparing said compound semiconductor body includes preparing a compound semiconductor substrate and forming an electrode layer on one side of said substrate, and said step of forming said oxidized film is a process for forming an anodized film selectively on the opposite side of the substrate by the anodic oxidation method with said substrate as an electrode.
Claim 6
Dependent Claim
59 words
A method according to claim 1 wherein said step of forming said oxidized film is a process for forming an insulating film selectively on one surface of said compound semiconductor body by the anodic oxidation method, and which further includes a step of providing an area by injecting impurity-ions in said body with said insulating film as a mask.
Claim 7
Dependent Claim
28 words
A method according to claim 1 wherein said step of preparing said compound semiconductor body includes preparing a GaAs substrate with a (100) surface as the principal surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-25 | 1982-03-27 | 1982-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-25 | 1986-03-27 | 1986-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-25 | 1990-03-27 | 1990-09-26 | $7700.00 | Window Closed / Lapsed |