US3844904A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Anodic oxidation of gallium phosphide
Assignee: AT&T Inc
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Filing: 1974-02-07
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Granted: 1974-10-29
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Expires: 1994-02-07
Abstract
Abstract A process is described for producing passivating and insulating layers on GaP and related compounds. The process involves anodic oxidation under conditions which permit the use of high current densities without detrimental effects on layer properties.
Inventors
- 👤 J Yahalom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:41
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; C; C25; C25D; C25D11/00; C25D11/02; C25D11/32; H10P14/6324
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
51 words
A PROCESS FOR THE ANODIC OXIDATION OF III-V SEMICONDUCTOR COMPOUNDS CARRIED OUT IN AN ELECTROLYTE WITH AN ANODIZING CURRENT CHARACTERIZED IN THAT THE ANODIZING CURRENT IS GREATER THAN ONE MA/CM2 THE ELECTROLYTE IS BUFFERED WITH A BUFFER CONCENTRATION OF BETWEEN 0.01M AND 1.0M AND THE PH IS BETWEEN 4 AND 7.
Claim 2
Dependent Claim
51 words
A PROCESS FOR THE ANODIC OXIDATION OF III-V SEMICONDUCTOR COMPOUNDS CARRIED OUT IN AN ELECTROLYTE WITH AN ANODIZING CURRENT CHARACTERIZED IN THAT THE ANODIZING CURRENT IS GREATER THAN ONE MA/CM2 THE ELECTROLYTE IS BUFFERED WITH A BUFFER CONCENTRATION OF BETWEEN 0.01M AND 1.0M AND THE PH IS BETWEEN 4 AND 7.
Claim 3
Dependent Claim
13 words
ProceSs of claim 1 in which the buffer concentration is 0.03M to .3M.
Claim 4
Dependent Claim
19 words
Process of claim 1 in which the semiconductor compound is GaP1 xAsx with x ranging from 0 to 1.
Claim 5
Dependent Claim
10 words
Process of claim 3 where the semiconductor compound is GaP.
Claim 6
Dependent Claim
14 words
Process of claim 1 in which the anodizing current is greater than 5 mA/cm2.
Claim 7
Dependent Claim
14 words
Process of claim 1 in which hydrogen phthalate ions are used as the buffer.
Claim 8
Dependent Claim
14 words
Process of claim 6 in which potassium hydrogen phthalate is used as the buffer.
Claim 9
Dependent Claim
16 words
Process of claim 1 in which buffering is provided by dihydrogen phosphate-hydrogen phosphate ion buffering system.
References Cited (Backward Citations)
US3264201A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-10-28 | 1978-04-29 | 1978-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-10-28 | 1982-04-29 | 1982-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-10-28 | 1986-04-29 | 1986-10-29 | $7700.00 | Window Closed / Lapsed |