US3264201A
Expired / Lapsed
US
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Method of producing a silicon semiconductor device
Assignee: Siemens Schuckertwerke AG
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Filing: 1962-08-15
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Granted: 1966-08-02
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Expires: 1982-08-15
Abstract
No abstract record available.
Inventors
- 👤 Schink Norbert
- 👤 Stoiber Rupert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6324; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
62 words
IN THE METHOD OF TREATING A SUBSTANTIALLY MONOCRYSTALLINE SILICON SEMICONDUCTOR BODY HAVING AT LEAST ONE P-N JUNCTION AND HAVING A SURFACE AT WHICH A P-N JUNCTION EMERGES, THE IMPROVEMENT WHICH COMPRISES ANODICALLY TREATING THE SEMICONDUCTOR IN AN ELECTROLYTE PREPARED BY BOILING A MIXTURE OF SUBSTANTIALLY EQUAL MOLES OF BORIC ACID, ETHYLENE GLYCOL AND AQUEOUS AMMONIA, TO FORM A DENSE PROTECTIVE INSULATING COATING.
Claim 2
Dependent Claim
62 words
IN THE METHOD OF TREATING A SUBSTANTIALLY MONOCRYSTALLINE SILICON SEMICONDUCTOR BODY HAVING AT LEAST ONE P-N JUNCTION AND HAVING A SURFACE AT WHICH A P-N JUNCTION EMERGES, THE IMPROVEMENT WHICH COMPRISES ANODICALLY TREATING THE SEMICONDUCTOR IN AN ELECTROLYTE PREPARED BY BOILING A MIXTURE OF SUBSTANTIALLY EQUAL MOLES OF BORIC ACID, ETHYLENE GLYCOL AND AQUEOUS AMMONIA, TO FORM A DENSE PROTECTIVE INSULATING COATING.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-01 | 1970-01-31 | 1970-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-01 | 1974-01-31 | 1974-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-01 | 1978-01-31 | 1978-08-02 | $7700.00 | Window Closed / Lapsed |