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US5629222A
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Method of forming semiconductor memory device by selectively forming an insulating film on the drain region
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-04-28
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Granted: 1997-05-13
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Expires: 2015-04-28
Abstract
Abstract A semiconductor memory device capable of being electrically written and erased comprising a floating gate, wherein, a silicon nitride film is incorporated between the drain region and the floating gate. Also claimed is a method for forming the same, which comprises forming a drain region on selected portions of a semiconductor substrate; forming a silicon nitride film or a silicon oxinitride film or a silicon carbide film or an aluminum oxide film selectively on the drain region; coating the substrate with a gate oxide film; and establishing a floating gate and thereafter a control gate.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
118 words
A method for forming a semiconductor memory device comprising the steps of: selectively forming a drain region within a semiconductor substrate having a protrusion; selectively forming an insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxinitride, silicon carbide and aluminum oxide on said drain region; forming a gate oxide film on a channel region of said substrate adjacent to said drain region; forming a floating gate over to said drain region with said insulating film interposed therebetween; and forming a control gate over at least said channel region with said gate oxide film interposed therebetween; wherein said drain region is formed in an upper portion of the protrusion of said semiconductor substrate.
Claim 2
Independent Claim
118 words
A method for forming a semiconductor memory device comprising the steps of: selectively forming a drain region within a semiconductor substrate having a protrusion; selectively forming an insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxinitride, silicon carbide and aluminum oxide on said drain region; forming a gate oxide film on a channel region of said substrate adjacent to said drain region; forming a floating gate over to said drain region with said insulating film interposed therebetween; and forming a control gate over at least said channel region with said gate oxide film interposed therebetween; wherein said drain region is formed in an upper portion of the protrusion of said semiconductor substrate.
Claim 3
Dependent Claim
27 words
The method of claim 1 further comprising the step of forming an insulator between said floating gate and said control gate before said control gate forming step.
Claim 4
Independent Claim
106 words
A method for manufacturing a semiconductor memory device comprising the steps of: forming source and drain regions within a semiconductor layer comprising silicon, thereby defining a channel region therebetween, said semiconductor layer having a protrusion; forming a first insulating film comprising silicon nitride selectively on said drain region by a thermal nitriding process; oxidizing a surface of said semiconductor layer by a thermal oxidation so that a second insulating film comprising silicon oxide is formed on said semiconductor layer, wherein said drain region is formed within said protrusion of the semiconductor layer and said first insulating film is located on a side surface of said protrusion.
Claim 5
Independent Claim
106 words
A method for manufacturing a semiconductor memory device comprising the steps of: forming source and drain regions within a semiconductor layer comprising silicon, thereby defining a channel region therebetween, said semiconductor layer having a protrusion; forming a first insulating film comprising silicon nitride selectively on said drain region by a thermal nitriding process; oxidizing a surface of said semiconductor layer by a thermal oxidation so that a second insulating film comprising silicon oxide is formed on said semiconductor layer, wherein said drain region is formed within said protrusion of the semiconductor layer and said first insulating film is located on a side surface of said protrusion.
Claim 6
Dependent Claim
28 words
The method of claim 3 wherein said second insulating film is formed on said semiconductor layer other than the portion on which said first insulating film is formed.
Claim 7
Dependent Claim
90 words
The method of claim 3 further comprising the steps of: forming a floating gate electrode on said first insulating film wherein said floating gate electrode extends over said drain region and at least a part of said channel region; forming a third insulating film on at least said floating gate electrode; and forming a control gate electrode over said channel region with said second insulating film interposed therebetween, wherein said control gate electrode overlaps at least a part of said floating gate electrode with said third insulating film interposed therebetween.
Claim 8
Dependent Claim
23 words
The method of claim 3 wherein said first insulating film comprising silicon nitride has a thickness of from 2 nm to 100 nm.
Claim 9
Dependent Claim
23 words
The method of claim 3 wherein said second insulating film comprising silicon oxide has a thickness of from 10 nm to 50 nm.
Claim 10
Independent Claim
91 words
A method for manufacturing a semiconductor memory device comprising the steps of: forming a drain region within a protrusion of a semiconductor layer comprising silicon; forming a first insulating film on a side surface of said protrusion, said first insulating film comprising a material selected from the group consisting of silicon nitride, aluminum oxide, silicon oxinitride and silicon carbide; and oxidizing a surface of said semiconductor layer except for said side surface by a thermal oxidation so that a second insulating film comprising silicon oxide is formed on said semiconductor layer.
Claim 11
Independent Claim
91 words
A method for manufacturing a semiconductor memory device comprising the steps of: forming a drain region within a protrusion of a semiconductor layer comprising silicon; forming a first insulating film on a side surface of said protrusion, said first insulating film comprising a material selected from the group consisting of silicon nitride, aluminum oxide, silicon oxinitride and silicon carbide; and oxidizing a surface of said semiconductor layer except for said side surface by a thermal oxidation so that a second insulating film comprising silicon oxide is formed on said semiconductor layer.
Claim 12
Dependent Claim
28 words
The method of claim 8 wherein said second insulating film is formed on said semiconductor layer other than the portion on which said first insulating film is formed.
Claim 13
Independent Claim
114 words
A method for manufacturing a semiconductor memory device comprising the steps of: forming a semiconductor layer comprising silicon and having a protrusion wherein an upper portion of said protrusion is added with an impurity of one conductivity type; forming a first insulating film comprising a material selected from the group consisting of silicon nitride, aluminum oxide, silicon oxinitride and silicon carbide on a side surface of said upper portion of said protrusion; thermally oxidizing a surface of said semiconductor layer to form a second insulating film comprising silicon on a portion of said semiconductor layer; and forming a floating gate electrode adjacent to said protrusion with said first and second insulating films interposed therebetween.
Claim 14
Independent Claim
114 words
A method for manufacturing a semiconductor memory device comprising the steps of: forming a semiconductor layer comprising silicon and having a protrusion wherein an upper portion of said protrusion is added with an impurity of one conductivity type; forming a first insulating film comprising a material selected from the group consisting of silicon nitride, aluminum oxide, silicon oxinitride and silicon carbide on a side surface of said upper portion of said protrusion; thermally oxidizing a surface of said semiconductor layer to form a second insulating film comprising silicon on a portion of said semiconductor layer; and forming a floating gate electrode adjacent to said protrusion with said first and second insulating films interposed therebetween.
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| 3.5 Years (Year 4) | 2000-05-12 | 2000-11-11 | 2001-05-13 | $2000.00 | Window Closed / Lapsed |
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