US4668970A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1985-12-02
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Granted: 1987-05-26
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Expires: 2005-12-02
Abstract
Abstract In a semiconductor device which includes an insulation film through which a charge can tunnel, a gate insulation film of a material different from the material of said insulation film or having a thickness different from that of said insulation film, and a floating gate extending over said tunnelable insulation film, the improvement wherein at least two sides of said tunnelable region are bounded by a device separation oxide film.
Inventors
- 👤 Yuji Yatsuda
- 👤 Takaaki Hagiwara
- 👤 Masatada Horiuchi
- 👤 Shinichi Minami
- 👤 Toru Kaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:49
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
248 words
A semiconductor device comprising: a substrate having a first conductivity type and having first and second main surfaces opposite to one another; source and drain regions of a second conductivity type formed within the first main surface of said substrate and separated from one another by a predetermined portion of said substrate; an impurity region of said second conductivity type formed within said first main surface of said substrate in electrical contact with one of said source and drain regions; a gate insulating film formed on said first main surface of said substrate and over said pedetermined portion of said substrate between said source and drain regions; a thick device separating oxide film formed by a LOCOS process over a first portion of said impurity region, and having a bottom surface which is below said first main surface of said substrate; a thin insulating film through which charges can tunnel to thereby form a tunnelable region, said thin insulating film being formed on a second portion of said impurity region so that said tunnelable region is bounded on at least two sides thereof by said thick device separating oxide film; a floating gate electrode formed over both said gate insulating film and said thin insulating film; and a control gate electrode formed over an insulator formed over said floating gate electrode, wherein said impurity region extends under said thick device separating oxide film to electrically connect said tunnelable region with said one of said source and drain regions.
Claim 2
Dependent Claim
248 words
A semiconductor device comprising: a substrate having a first conductivity type and having first and second main surfaces opposite to one another; source and drain regions of a second conductivity type formed within the first main surface of said substrate and separated from one another by a predetermined portion of said substrate; an impurity region of said second conductivity type formed within said first main surface of said substrate in electrical contact with one of said source and drain regions; a gate insulating film formed on said first main surface of said substrate and over said pedetermined portion of said substrate between said source and drain regions; a thick device separating oxide film formed by a LOCOS process over a first portion of said impurity region, and having a bottom surface which is below said first main surface of said substrate; a thin insulating film through which charges can tunnel to thereby form a tunnelable region, said thin insulating film being formed on a second portion of said impurity region so that said tunnelable region is bounded on at least two sides thereof by said thick device separating oxide film; a floating gate electrode formed over both said gate insulating film and said thin insulating film; and a control gate electrode formed over an insulator formed over said floating gate electrode, wherein said impurity region extends under said thick device separating oxide film to electrically connect said tunnelable region with said one of said source and drain regions.
Claim 3
Dependent Claim
240 words
A semiconductor device comprising: a substrate having a first conductivity type and having first and second main surfaces opposite to one another; source and drain regions of a second conductivity type formed within the first main surface of said substrate and separated from one another by a predetermined portion of said substrate; an impurity region of said second conductivity type formed within said first main surface of said substrate in electrical contact with one of said source and drain regions; a gate insulating film formed on said first main surface of said substrate and over said predetermined portion of said substrate between said source and drain regions; a thick device separating oxide film formed by a LOCOS process over a first portion of said impurity region, and having a bottom surface which is below said first main surface of said substrate; a thin insulating film through which charges can tunnel to thereby form a tunnelable region, said thin insulating film being formed on a second portion of said impurity region so that said tunnelable region is bounded on at least two sides thereof by said thick device separating oxide film; a floating gate electrode formed over both said gate insulating film and said thin insulating film; and a control gate electrode formed over an insulator formed over said floating gate electrode, wherein the entire peripheral edge of said tunnelable region is in contact with the thick device separating oxide film.
Claim 4
Dependent Claim
240 words
A semiconductor device comprising: a substrate having a first conductivity type and having first and second main surfaces opposite to one another; source and drain regions of a second conductivity type formed within the first main surface of said substrate and separated from one another by a predetermined portion of said substrate; an impurity region of said second conductivity type formed within said first main surface of said substrate in electrical contact with one of said source and drain regions; a gate insulating film formed on said first main surface of said substrate and over said predetermined portion of said substrate between said source and drain regions; a thick device separating oxide film formed by a LOCOS process over a first portion of said impurity region, and having a bottom surface which is below said first main surface of said substrate; a thin insulating film through which charges can tunnel to thereby form a tunnelable region, said thin insulating film being formed on a second portion of said impurity region so that said tunnelable region is bounded on at least two sides thereof by said thick device separating oxide film; a floating gate electrode formed over both said gate insulating film and said thin insulating film; and a control gate electrode formed over an insulator formed over said floating gate electrode, wherein the entire peripheral edge of said tunnelable region is in contact with the thick device separating oxide film.
Claim 5
Dependent Claim
31 words
A semiconductor device according to claim 1, further comprising an additional gate insulating film formed over said floating electrode and a second gate electrode formed over said additional gate insulating film.
Claim 6
Dependent Claim
31 words
A semiconductor device according to claim 2, further comprising an additional gate insulating film formed over said floating electrode and a second gate electrode formed over said additional gate insulating film.
Claim 7
Dependent Claim
243 words
A semiconductor device comprising: a substrate having a first conductivity type and having first and second main surfaces opposite to one another; source and drain regions of a second conductivity type formed within the first main surface of said substrate and separated from one another by a predetermined portion of said substrate; an impurity region of said second conductivity type formed within said first main surface of said substrate in electrical contact with one of said source and drain regions; a gate insulating film formed on said first main surface of said substrate and over said predetermined portion of said substrate between said source and drain regions; a thick device separating oxide film formed by a LOCOS process over a first portion of said impurity region, and having a bottom surface which is below said first main surface of said substrate; a thin insulating film through which charges can tunnel to thereby form a tunnelable region, said thin insulating film being formed on a second portion of said impurity region so that said tunnelable region is bounded on at least two sides thereof by said thick device separating oxide film; a floating gate electrode formed over both said gate insulating film and said thin insulating film; and a control gate electrode formed over an insulator formed over said floating gate electrode, wherein said impurity region is a diffused region formed deeper from the surface of said substrate than said source and drain regions.
Claim 8
Dependent Claim
243 words
A semiconductor device comprising: a substrate having a first conductivity type and having first and second main surfaces opposite to one another; source and drain regions of a second conductivity type formed within the first main surface of said substrate and separated from one another by a predetermined portion of said substrate; an impurity region of said second conductivity type formed within said first main surface of said substrate in electrical contact with one of said source and drain regions; a gate insulating film formed on said first main surface of said substrate and over said predetermined portion of said substrate between said source and drain regions; a thick device separating oxide film formed by a LOCOS process over a first portion of said impurity region, and having a bottom surface which is below said first main surface of said substrate; a thin insulating film through which charges can tunnel to thereby form a tunnelable region, said thin insulating film being formed on a second portion of said impurity region so that said tunnelable region is bounded on at least two sides thereof by said thick device separating oxide film; a floating gate electrode formed over both said gate insulating film and said thin insulating film; and a control gate electrode formed over an insulator formed over said floating gate electrode, wherein said impurity region is a diffused region formed deeper from the surface of said substrate than said source and drain regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-25 | 1990-11-24 | 1991-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-25 | 1994-11-24 | 1995-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-25 | 1998-11-24 | 1999-05-26 | $7700.00 | Window Closed / Lapsed |