US5616520A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device and fabrication method thereof
Assignee: Renesas Electronics Corp
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Filing: 1994-12-30
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Granted: 1997-04-01
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Expires: 2014-12-30
Abstract
Abstract A semiconductor device is fabricated by forming first metal balls on electrode pads of a semiconductor chip. The first metal balls each can have a sharp tipped anchor. All of the anchors simultaneously flattened slightly only to the extent of equalizing the height thereof. The first metal balls are bonded to electrodes formed on a substrate with wirings by embedding the anchors into the electrodes. Alternatively, second metal balls can be formed on the electrodes which are then flattened to equalize the height thereof. The first metal balls, either with or without the anchors, are bonded to the second metal balls. The first and second metal balls are preferably heated during the bonding step to soften the second metal balls.
Inventors
- 👤 Masahiko Nishiuma
- 👤 Norio Nakazato
- 👤 Hiroyuki Takahashi
- 👤 Chiyoshi Kamada
- 👤 Motoo Suwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:04
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W40/228; H10W40/70; H10W40/77; H10W44/00; H10W44/20; H10W76/00; H10W76/60; H10W72/00; H10W72/01; H10W72/011; H10W72/012; H10W72/01221; H10W72/01225; H10W72/01251; H10W72/071; H10W72/0711; H10W72/07141; H10W72/07178; H10W72/072; H10W72/07231; H10W72/07232; H10W72/07236; H10W72/07251; H10W72/20; H10W72/221; H10W72/222; H10W72/241; H10W72/251; H10W72/252; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/877; H10W72/90; H10W72/941; H10W72/944; H10W72/9445; H10W72/951; H10W72/952; H10W74/00; H10W90/00; H10W90/701; H10W90/721; H10W90/724; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
167 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes, said substrate having a plurality of leads, each of which is electrically connected to one of other ends of said wirings; forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method; forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and bonding said first gold balls formed on said main surface of said chip to said wiring lands.
Claim 2
Independent Claim
167 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes, said substrate having a plurality of leads, each of which is electrically connected to one of other ends of said wirings; forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method; forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and bonding said first gold balls formed on said main surface of said chip to said wiring lands.
Claim 3
Dependent Claim
39 words
A method of fabricating a semiconductor integrated circuit device according to claim 1, wherein a square frame for surrounding said plurality of lands is formed on said substrate for providing a cavity in which said semiconductor chip is mounted.
Claim 4
Dependent Claim
34 words
A method of fabricating a semiconductor integrated circuit device according to claim 2, further comprising the step of: sealing the semiconductor chip in the cavity by providing a quadrilateral sealing body on the frame.
Claim 5
Dependent Claim
72 words
A method of fabricating a semiconductor integrated circuit device according to claim 2, further comprising the step of: bonding heat conductive means made of a metal to one surface of a quadrilateral sealing body, and sealing the semiconductor chip in the cavity by attaching the sealing body to the frame so that the heat conductive means contacts a back surface of the semiconductor chip facing the main surface of the semiconductor chip.
Claim 6
Dependent Claim
21 words
A method of fabricating a semiconductor integrated circuit device according to claim 4, wherein the heat conductive means are gold ribbons.
Claim 7
Dependent Claim
21 words
A method of fabricating a semiconductor integrated circuit device according to claim 4, wherein the heat conductive means are gold wires.
Claim 8
Dependent Claim
21 words
A method of fabricating a semiconductor integrated circuit device according to claim 4, wherein the heat conductive means are gold bumps.
Claim 9
Dependent Claim
74 words
A method of fabricating a semiconductor integrated circuit device according to claim 2, further comprising the step of: bonding a plurality of heat conductive means of metallic bumps to one surface of a quadrilateral sealing body, and sealing the semiconductor chip in the cavity by attaching the sealing body to the frame so that the heat conductive means contacts a back surface of the semiconductor chip facing the main surface of the semiconductor chip.
Claim 10
Dependent Claim
36 words
A method of fabricating a semiconductor integrated circuit device according to claim 1, further comprising the steps of: forming third gold balls on said first balls formed on said semiconductor chip by said thermo-compression ball-bonding method.
Claim 11
Dependent Claim
30 words
A method of fabricating a semiconductor integrated circuit device according to claim 1, wherein a metallic board is attached to a back surface of the substrate opposite the main surface.
Claim 12
Dependent Claim
27 words
A method of fabricating a semiconductor integrated circuit device according to claim 1, wherein at least one of said first gold balls has a sharp tipped anchor.
Claim 13
Dependent Claim
43 words
A method of fabricating a semiconductor integrated circuit device according to claim 11, further comprising the step of slightly flattening said anchors to equalize the height of the first gold balls prior to bonding said first gold balls to said second gold balls.
Claim 14
Dependent Claim
32 words
A method of fabricating a semiconductor integrated circuit device according to claim 11, further comprising the step of heating said first gold balls and said second gold balls during said bonding step.
Claim 15
Dependent Claim
36 words
A method of fabricating a semiconductor integrated circuit device according to claim 1, wherein said substrate includes a plurality of leads, each of said leads being electrically connected to one of other ends of said wirings.
Claim 16
Independent Claim
172 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first metal balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method, wherein said first metal balls each have an anchor; forming second metal balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second metal balls formed on said substrate by pressing said second metal balls with a flat surface to equalize the height of said second metal balls, said flattened second balls forming wiring lands; and bonding said first metal balls to said wiring lands by embedding the anchors of said first metal balls into said wiring lands.
Claim 17
Independent Claim
172 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first metal balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method, wherein said first metal balls each have an anchor; forming second metal balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second metal balls formed on said substrate by pressing said second metal balls with a flat surface to equalize the height of said second metal balls, said flattened second balls forming wiring lands; and bonding said first metal balls to said wiring lands by embedding the anchors of said first metal balls into said wiring lands.
Claim 18
Dependent Claim
43 words
A method of fabricating a semiconductor integrated circuit device according to claim 15, further comprising the step of slightly flattening said anchors to equalize the height of the first metal balls prior to bonding said first metal balls to said second metal balls.
Claim 19
Dependent Claim
32 words
A method of fabricating a semiconductor integrated circuit device according to claim 15, further comprising the step of heating said first metal balls and said second metal balls during said bonding step.
Claim 20
Dependent Claim
35 words
A method of fabricating a semiconductor integrated circuit device according to claim 15, wherein said first metal balls are heated and softened at a temperature lower than the recrystallization temperature thereof during said bonding step.
Claim 21
Dependent Claim
35 words
A method of fabricating a semiconductor integrated circuit device according to claim 1, wherein said second metal balls are heated and softened at a temperature higher than the recrystallization temperature thereof during said bonding step.
Claim 22
Independent Claim
140 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said substrate main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first metal balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method, wherein said first metal balls each have an anchor; forming second metal balls on said wiring electrodes of said substrate by a thermo-compression ball bonding method; and bonding said first metal balls to said second metal balls by embedding the anchors of said first metal balls into said second metal balls.
Claim 23
Independent Claim
140 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said substrate main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first metal balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method, wherein said first metal balls each have an anchor; forming second metal balls on said wiring electrodes of said substrate by a thermo-compression ball bonding method; and bonding said first metal balls to said second metal balls by embedding the anchors of said first metal balls into said second metal balls.
Claim 24
Independent Claim
146 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method; forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and bonding said first gold balls formed on said main surface of said chip to said wiring lands.
Claim 25
Independent Claim
146 words
A method of fabricating a semiconductor integrated circuit device comprising the steps of: providing a semiconductor chip having a main surface, an integrated circuit and a plurality of electrode pads formed on said main surface; providing a substrate having a main surface, a plurality of wiring electrodes and a plurality of wirings formed on said main surface, one end of each of the wirings electrically connected to the respective wiring electrodes; forming first gold balls on said electrode pads of said semiconductor chip by a thermo-compression ball-bonding method; forming second gold balls on said wiring electrodes of said substrate by said thermo-compression ball-bonding method; simultaneously flattening said second gold balls formed on said substrate by pressing said gold balls with a flat surface to form gold wiring lands; and bonding said first gold balls formed on said main surface of said chip to said wiring lands.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-31 | 2000-09-30 | 2001-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-31 | 2004-09-30 | 2005-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-31 | 2008-09-30 | 2009-04-01 | $7700.00 | Window Closed / Lapsed |