Differential analog transistors constructed from digital transistors

Claim 2

An electronic integrated circuit, comprising: a differential amplifier, including at least four Field-Effect Transistors (FETs) of digital type, at least two of the FETs (i) having their respective channels interconnected by connecting a drain of one FET to a source of another FET, (ii) and having their respective gates interconnected, to form at least one composite channel having a longer channel than the individual FETs.

Claim 3

The electronic integrated circuit of claim 1 further having the respective channels interconnected to form that at least one composite channel having a wider channel than the individual FETs.

Claim 4

An electronic integrated circuit, comprising: a differential amplifier, including at least four Field-Effect Transistors (FETs) of digital type, having at least two of their respective channels interconnected by connecting a drain of one FET to a source of another FET, to form at least one composite channel having a longer channel than the individual FETs, in which the FETs of the digital type form a plurality of arrays, each array having a respective centroid, and all respective centroids having a common centroid.

Claim 5

An electronic integrated circuit, comprising: a differential amplifier, including at least four Field-Effect Transistors (FETs) of digital type, having at least two of their respective channels interconnected by connecting a drain of one FET to a source of another FET, to form at least one composite channel having a longer channel than the individual FETs, in which the FETs of the digital type form a plurality of arrays, each array having a respective centroid, and all respective centroids having a common centroid.

Claim 6

An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.

Claim 7

An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.

Claim 8

An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, wherein at least two of the groups are connected in parallel to form the at least one composite channel having a wider channel than the individual FETs, and wherein the FETs in each respective group have their gates commonly connected together.

Claim 9

An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, wherein at least two of the groups are connected in parallel to form the at least one composite channel having a wider channel than the individual FETs, and wherein the FETs in each respective group have their gates commonly connected together.

Claim 10

An electronic integrated circuit, comprising: a differential amplifier comprising at least two groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.

Claim 11

An electronic integrated circuit, comprising: a differential amplifier comprising at least two groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.