US4884118A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double metal HCMOS compacted array
Assignee: LSI Corp
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Filing: 1988-02-12
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Granted: 1989-11-28
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Expires: 2008-02-12
Abstract
Abstract A gate array is provided in which active areas within the substrate are arranged in alternating columns of opposite conductivity type and symmetrical about the center lines through each column so that CMOS devices can be advantageously formed by allocating only small increments of active area to metal routing. The substrate and well taps are also symmetrical about the column center line. The active area symmetry allows p-channel and n-channel transistors to be combined where the p-channel transistor is on either the right or left, thus increasing the flexibility in placing the elements within the integrated circuit chip.
Inventors
- 👤 Alex C. Hui
- 👤 Anthony Y. Wong
- 👤 Conrad J. Dell'Oca
- 👤 Daniel Wong
- 👤 Roger Szeto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:17
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/903; H10D84/907
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
332 words
An integrated circuit gate array structure comprising: a semiconductor substrate in which are located columns of semiconductor material of a first conductivity type alternating with and adjacent to columns of semiconductor material of a second conductivity type thereby to leave no intervening area for metal routing, said columns comprising an array of elements, the elements in successive columns of said array being aligned into rows; active areas formed within said columns to which can be connected conductive material, thereby forming active devices, each of said active areas comprising: a first source/drain region; a second source/drain region; a third source/drain region; a first channel region between said first and second source/drain regions; a gate formed above said first channel region to control the conductivity of said first channel region; a second channel region between said second and third source/drain regions; and a gate formed above said second channel region to control the conductivity of said second channel region; tap regions formed within said columns such that tap regions of subsequent columns are aligned into rows, said tap regions having the same conductivity type as the columns in which they are formed and to which can be connected conductive material, said tap regions being more heavily doped than their respective columns thereby to allow current and voltage characteristics of said columns to be controlled; said active areas and said tap regions in each column being symmetrical about a center line running the length of each of said columns, thus allowing one of said active areas to be paired with another of said active areas in an adjacent column on either side of said one of said active areas; wherein said active areas and said tap regions within one of said columns are placed so as to form a plurality of adjacent cells, each cell consisting of one active area followed by one tap region followed by one active area such that an active area directly abuts an active area in the next adjacent cell.
Claim 2
Dependent Claim
332 words
An integrated circuit gate array structure comprising: a semiconductor substrate in which are located columns of semiconductor material of a first conductivity type alternating with and adjacent to columns of semiconductor material of a second conductivity type thereby to leave no intervening area for metal routing, said columns comprising an array of elements, the elements in successive columns of said array being aligned into rows; active areas formed within said columns to which can be connected conductive material, thereby forming active devices, each of said active areas comprising: a first source/drain region; a second source/drain region; a third source/drain region; a first channel region between said first and second source/drain regions; a gate formed above said first channel region to control the conductivity of said first channel region; a second channel region between said second and third source/drain regions; and a gate formed above said second channel region to control the conductivity of said second channel region; tap regions formed within said columns such that tap regions of subsequent columns are aligned into rows, said tap regions having the same conductivity type as the columns in which they are formed and to which can be connected conductive material, said tap regions being more heavily doped than their respective columns thereby to allow current and voltage characteristics of said columns to be controlled; said active areas and said tap regions in each column being symmetrical about a center line running the length of each of said columns, thus allowing one of said active areas to be paired with another of said active areas in an adjacent column on either side of said one of said active areas; wherein said active areas and said tap regions within one of said columns are placed so as to form a plurality of adjacent cells, each cell consisting of one active area followed by one tap region followed by one active area such that an active area directly abuts an active area in the next adjacent cell.
Claim 3
Dependent Claim
109 words
An integrated circuit gate array structure as in claim 1 further comprising lines of conductive material formed above said semiconductor substrate, said lines being formed in a plurality of layers, comprising first line in one of said plurality of layers running parallel to said columns and second lines in another of said plurality of layers running perpendicular to said columns; and in which a plurality of said second lines are located above at least one of said active areas which directly abuts an active area in the next adjacent cell and that active area in the next adjacent cell abutted by said at least one of said active areas.
Claim 4
Dependent Claim
49 words
An integrated circuit gate array structure as in claim in which said columns of said first conductivity type are identical to each other and said columns of said second conductivity type are identical to each other and of a different width from said columns of said first conductivity type.
Claim 5
Dependent Claim
42 words
An integrated circuit gate array structure as in claim 2 in which said lines can be patterned both to form macrocells which implement isolated logic functions in portions of said structure and to connect said macrocells, thereby implementing a complex logic function.
Claim 6
Dependent Claim
49 words
An integrated circuit gate array structure as in claim 4 in which said macrocells are placed on said gate array structure starting at one of said columns of either conductivity type, thereby allowing portions of said substrate to be allocated to said lines in units of a single columns.
Claim 7
Dependent Claim
30 words
An integrated circuit gate array structure as in claim 5 in which up to six of said lines running parallel to said columns are placed above each of said columns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-27 | 1993-05-29 | 1993-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-27 | 1997-05-29 | 1997-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-27 | 2001-05-29 | 2001-11-28 | $7700.00 | Window Closed / Lapsed |