US5610429A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Differential analog transistors constructed from digital transistors
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1995-08-22
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Granted: 1997-03-11
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Expires: 2015-08-22
Abstract
Abstract The invention concerns approaches to interconnecting individual field-effect transistors (FETs) in integrated circuits (ICs), in order to provide a larger, composite transistor. In one approach, the individual FETs are positioned symmetrically about centroids, which are themselves distributed symmetrically over the IC. The invention allows individual digital transistors to be connected into a larger, composite, analog transistor.
Inventors
- 👤 Harold S. Crafts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:43
CPC Classifications
H; H10; H10D; H10D89/00; Y; Y10; Y10S; Y10S257/00; Y10S257/919
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
65 words
An electronic integrated circuit, comprising: a differential amplifier, including at least four Field-Effect Transistors (FETs) of digital type, at least two of the FETs (i) having their respective channels interconnected by connecting a drain of one FET to a source of another FET, (ii) and having their respective gates interconnected, to form at least one composite channel having a longer channel than the individual FETs.
Claim 2
Dependent Claim
65 words
An electronic integrated circuit, comprising: a differential amplifier, including at least four Field-Effect Transistors (FETs) of digital type, at least two of the FETs (i) having their respective channels interconnected by connecting a drain of one FET to a source of another FET, (ii) and having their respective gates interconnected, to form at least one composite channel having a longer channel than the individual FETs.
Claim 3
Dependent Claim
29 words
The electronic integrated circuit of claim 1 further having the respective channels interconnected to form that at least one composite channel having a wider channel than the individual FETs.
Claim 4
Dependent Claim
82 words
An electronic integrated circuit, comprising: a differential amplifier, including at least four Field-Effect Transistors (FETs) of digital type, having at least two of their respective channels interconnected by connecting a drain of one FET to a source of another FET, to form at least one composite channel having a longer channel than the individual FETs, in which the FETs of the digital type form a plurality of arrays, each array having a respective centroid, and all respective centroids having a common centroid.
Claim 5
Dependent Claim
82 words
An electronic integrated circuit, comprising: a differential amplifier, including at least four Field-Effect Transistors (FETs) of digital type, having at least two of their respective channels interconnected by connecting a drain of one FET to a source of another FET, to form at least one composite channel having a longer channel than the individual FETs, in which the FETs of the digital type form a plurality of arrays, each array having a respective centroid, and all respective centroids having a common centroid.
Claim 6
Dependent Claim
94 words
An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.
Claim 7
Dependent Claim
94 words
An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.
Claim 8
Dependent Claim
98 words
An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, wherein at least two of the groups are connected in parallel to form the at least one composite channel having a wider channel than the individual FETs, and wherein the FETs in each respective group have their gates commonly connected together.
Claim 9
Dependent Claim
98 words
An electronic integrated circuit, comprising: a differential amplifier comprising at least four groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, wherein at least two of the groups are connected in parallel to form the at least one composite channel having a wider channel than the individual FETs, and wherein the FETs in each respective group have their gates commonly connected together.
Claim 10
Dependent Claim
94 words
An electronic integrated circuit, comprising: a differential amplifier comprising at least two groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.
Claim 11
Dependent Claim
94 words
An electronic integrated circuit, comprising: a differential amplifier comprising at least two groups of transistors, each group having at least two Field-Effect Transistors (FETs) having channel lengths less than about 1.5 microns, wherein the FETs in each respective group have their channels serially interconnected to form a composite channel having a longer channel than the individual FETs, whereby the composite channel is characterized by either blocking current flow, or allowing current flow, in a consistent manner through each individual FET channel, wherein the FETs in each respective group have their gates commonly connected together.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-10 | 2000-09-09 | 2001-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-10 | 2004-09-09 | 2005-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-10 | 2008-09-09 | 2009-03-11 | $7700.00 | Window Closed / Lapsed |