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US5605599A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of generating plasma having high ion density for substrate processing operation

Assignee: Novellus Systems Inc
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Filing: 1995-02-17
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Granted: 1997-02-25
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Expires: 2015-02-17
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Abstract

Abstract An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil in an expanding spiral pattern about the vacuum chamber containing a semiconductor wafer supported by a platen. The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source having a frequency of about 450 KHz and a power in the range of 200-2000 Watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source independently adjusts the bias voltage on the wafer.

Inventors

  • 👤 Jeffrey C. Benzing
  • 👤 Eliot K. Broadbent
  • 👤 J. Kirkwood H. Rough

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:51
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/3211; H01J37/32431; H01J37/3244; H01J37/32458; H01J37/32467; H01J37/32715; H05; H05H; H05H1/00; H05H1/24; H05H1/46; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 230 words
A method of generating a high density of ions for a substrate processing operation, comprising: placing a substrate in a process chamber; introducing a process gas into the process chamber; generating a bias voltage on the substrate; providing an oscillating current to an induction coil defining in conjunction with the substrate a column of the process gas, the oscillating current in the induction coil establishing a strong axial time-varying magnetic field in the process gas column that accelerates electrons azimuthally inside of and proximate to the induction coil, the accelerated electrons creating a high electric field region in the process gas column inside of and proximate to the induction coil and mostly canceling the axial magnetic field inside of the high electric field region, thereby creating a low electric field region in the process gas column inside of the high electric field region; and maintaining the process gas in the process gas column at a pressure so that electron collisions in the high and low electric field regions ignite a plasma and cause an ion current to fall on the substrate, the induction coil being shaped so that portions of the substrate nearer to the induction coil receive a greater contribution of ion current from ionization in the high electric field region than portions of the substrate farther from the induction coil to equalize ion current falling across the substrate.
Claim 2
Independent Claim 230 words
A method of generating a high density of ions for a substrate processing operation, comprising: placing a substrate in a process chamber; introducing a process gas into the process chamber; generating a bias voltage on the substrate; providing an oscillating current to an induction coil defining in conjunction with the substrate a column of the process gas, the oscillating current in the induction coil establishing a strong axial time-varying magnetic field in the process gas column that accelerates electrons azimuthally inside of and proximate to the induction coil, the accelerated electrons creating a high electric field region in the process gas column inside of and proximate to the induction coil and mostly canceling the axial magnetic field inside of the high electric field region, thereby creating a low electric field region in the process gas column inside of the high electric field region; and maintaining the process gas in the process gas column at a pressure so that electron collisions in the high and low electric field regions ignite a plasma and cause an ion current to fall on the substrate, the induction coil being shaped so that portions of the substrate nearer to the induction coil receive a greater contribution of ion current from ionization in the high electric field region than portions of the substrate farther from the induction coil to equalize ion current falling across the substrate.
Claim 3
Dependent Claim 29 words
A method as in claim 1 wherein the maintaining step comprises maintaining the process gas in the process gas column at a pressure of about one milliTorr or less.
Claim 4
Dependent Claim 29 words
A method as in claim 1 wherein the maintaining step comprises maintaining the process gas in the process gas column at a pressure of about 0.6 milliTorr or less.
Claim 5
Dependent Claim 32 words
A method as in claim 1 wherein the oscillating current is a low frequency oscillating current, and the bias voltage generating step comprises applying high frequency radio frequency power to the substrate.
Claim 6
Dependent Claim 42 words
A method as in claim 4 wherein: the substrate processing operation is an ion sputter process; the process gas is an inert gas; and the pressure maintaining step comprises maintaining the process gas in the process gas column at a low pressure.
Claim 7
Dependent Claim 55 words
A method as in claim 4, wherein: the substrate processing operation is a chemical etching procedure; the process gas introducing step comprises introducing a reactive gas to the substrate from multiple gas sources arranged radially symmetrical thereabout; and the maintaining step comprises maintaining the process gas in the process gas column at a high pressure.
Claim 8
Dependent Claim 26 words
A method as in claim 1, wherein: the substrate processing operation is a plasma-enhanced chemical vapor deposition procedure; and the process gas is a reactive gas.
Claim 9
Dependent Claim 25 words
A method as in claim 7 wherein the pressure maintaining step comprises maintaining the process gas in the process gas column at a high pressure.
Claim 10
Dependent Claim 28 words
A method as in claim 8, wherein the process gas introducing step comprises introducing the reactive gas to the substrate from multiple gas sources arranged radially symmetrical thereabout.
Claim 11
Dependent Claim 27 words
A method as in claim 1, further comprising the step of evacuating the chamber to a pressure less than atmospheric pressure prior to the pressure maintaining step.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-02-25 2000-08-26 2001-02-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-02-25 2004-08-26 2005-02-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-02-25 2008-08-26 2009-02-25 $7700.00 Window Closed / Lapsed

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