Patent US5604374A successfully refreshed from Google Patents.
US5604374A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and manufacturing method thereof
Assignee: Toshiba Corp
•
Filing: 1995-03-07
•
Granted: 1997-02-18
•
Expires: 2015-03-07
Abstract
Abstract A semiconductor device comprises a semiconductor substrate having a main surface, a first semiconductor region of a first conductive type, formed on the main surface of the semiconductor substrate, a surrounding of the first semiconductor region is buried with a first insulation film, a second semiconductor region of a second conductive type, formed on the first insulation film and the first semiconductor region, a second insulation film, formed on the second semiconductor region, an end portion of the second insulation film is positioned above the first insulation film, and having an opening at a central portion thereof to be positioned above the first semiconductor region, and a third semiconductor region of a first conductivity type formed on a surface of the second semiconductor region exposed through the opening of the second insulation film.
Inventors
- 👤 Kazumi Inou
- 👤 Yasuhiro Katsumata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:08
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10D10/40
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
137 words
A semiconductor device comprising: a semiconductor substrate having a main surface; a first semiconductor region of a first conductivity type, formed on said main surface of said semiconductor substrate, said first semiconductor region being surrounded with a first insulation film; a second semiconductor region of a second conductivity type, formed on said first insulation film and said first semiconductor region by an epitaxial growth technique; a second insulation film, formed on said second semiconductor region, an end portion of said second insulation film being positioned just above said first insulation film, and having an opening at a central portion thereof to be positioned just above said first semiconductor region; and a third semiconductor region of a first conductivity type formed on a surface of said second semiconductor region exposed through said opening of said second insulation film.
Claim 2
Dependent Claim
137 words
A semiconductor device comprising: a semiconductor substrate having a main surface; a first semiconductor region of a first conductivity type, formed on said main surface of said semiconductor substrate, said first semiconductor region being surrounded with a first insulation film; a second semiconductor region of a second conductivity type, formed on said first insulation film and said first semiconductor region by an epitaxial growth technique; a second insulation film, formed on said second semiconductor region, an end portion of said second insulation film being positioned just above said first insulation film, and having an opening at a central portion thereof to be positioned just above said first semiconductor region; and a third semiconductor region of a first conductivity type formed on a surface of said second semiconductor region exposed through said opening of said second insulation film.
Claim 3
Dependent Claim
36 words
The semiconductor device according to claim 1, wherein said first semiconductor region is a collector, said second semiconductor region is a base, and said third semiconductor region is an emitter, whereby a bipolar transistor is formed.
Claim 4
Dependent Claim
56 words
The semiconductor device according to claim 1, wherein said second semiconductor region comprises a monocrystal semiconductor layer formed on said first semiconductor region and a polycrystalline semiconductor layer formed on said first insulation film, and at least one part of a boundary between said monocrystal region and said polycrystalline region just under said second insulation film.
Claim 5
Dependent Claim
26 words
The semiconductor device according to claim 1, wherein a width of said first semiconductor region is substantially the same as that of said third semiconductor region.
Claim 6
Dependent Claim
28 words
The semiconductor device according to claim 1, wherein a surface portion of said second insulation film is formed of one of an oxide film and a nitride film.
Claim 7
Dependent Claim
43 words
The semiconductor device according to claim 1, wherein said second insulation film is an oxide film containing an impurity material whose conductivity type is the same as that of an impurity material included in said second semiconductor region of the second conductivity type.
Claim 8
Dependent Claim
41 words
The semiconductor device according to claim 1, further comprising a fourth semiconductor region of a second conductivity type, whose impurity concentration is higher than that of said second semiconductor region, in said second semiconductor region just under said second insulation film.
Claim 9
Dependent Claim
176 words
A semiconductor device comprising: a semiconductor substrate having a main surface; a first semiconductor region of a first conductivity type, formed on said main surface of said semiconductor substrate, said first semiconductor region being surrounded with a first insulation film; a second semiconductor region of a second conductivity type, formed on said first insulation film and said first semiconductor region by an epitaxial growth technique; a second insulation film, formed on said second semiconductor region, an end portion of said second insulation film being positioned just above said first insulation film, and having an opening at a central portion thereof to be positioned just above said first semiconductor region; a third semiconductor region of a first conductivity type formed on a surface of said second semiconductor region exposed through said opening of said second insulation film; and a conductive layer formed on at least one portion of a peripheral portion of said second insulation film and on said second semiconductor region other than a region covered by said second insulation film and said third semiconductor region.
Claim 10
Dependent Claim
176 words
A semiconductor device comprising: a semiconductor substrate having a main surface; a first semiconductor region of a first conductivity type, formed on said main surface of said semiconductor substrate, said first semiconductor region being surrounded with a first insulation film; a second semiconductor region of a second conductivity type, formed on said first insulation film and said first semiconductor region by an epitaxial growth technique; a second insulation film, formed on said second semiconductor region, an end portion of said second insulation film being positioned just above said first insulation film, and having an opening at a central portion thereof to be positioned just above said first semiconductor region; a third semiconductor region of a first conductivity type formed on a surface of said second semiconductor region exposed through said opening of said second insulation film; and a conductive layer formed on at least one portion of a peripheral portion of said second insulation film and on said second semiconductor region other than a region covered by said second insulation film and said third semiconductor region.
Claim 11
Dependent Claim
22 words
The semiconductor device according to claim 8, wherein said conductive layer is formed of a semiconductor layer of a second conductive type.
Claim 12
Dependent Claim
18 words
The semiconductor device according to claim 8, wherein said conductive layer is formed of a high melting point.
Claim 13
Dependent Claim
36 words
The semiconductor device according to claim 8, wherein said first semiconductor region is a collector, said second semiconductor region is a base, and said third semiconductor region is an emitter, whereby a bipolar transistor is formed.
Claim 14
Dependent Claim
57 words
The semiconductor device according to claim 8, wherein said second semiconductor region comprises a monocrystal semiconductor layer formed on said first semiconductor region and a polycrystalline semiconductor layer formed on said first insulation film, and at least one part of a boundary between said monocrystal region and said polycrystalline region exists just under said second insulation film.
Claim 15
Dependent Claim
26 words
The semiconductor device according to claim 8, wherein a width of said first semiconductor region is substantially the same as that of said third semiconductor region.
Claim 16
Dependent Claim
28 words
The semiconductor device according to claim 8, wherein a surface portion of said second insulation film is formed of one of an oxide film and a nitride film.
Claim 17
Dependent Claim
42 words
The semiconductor device according to claim 8, wherein said second insulation film is an oxide film containing an impurity material whose conductivity type is the same as that of an impurity material forming said second semiconductor region of the second conductivity type.
Claim 18
Dependent Claim
41 words
The semiconductor device according to claim 9, further comprising a fourth semiconductor region of a second conductivity type, whose impurity concentration is higher than that of said second semiconductor region, in said second semiconductor region just under said second insulation film.
References Cited (Backward Citations)
US4252581A
Cited
US4860086A
Cited
US4824799A
Cited
JPS6384156A
Cited
US4853342A
Cited
US4851362A
Cited
JPH01187864A
Cited
US4974045A
Cited
JPH0240923A
Cited
US5198689A
Cited
JPH02151037A
Cited
US5234845A
Cited
US5485034A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-18 | 2000-08-19 | 2001-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-18 | 2004-08-19 | 2005-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-18 | 2008-08-19 | 2009-02-18 | $7700.00 | Window Closed / Lapsed |