US5234845A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor IC using selective poly and EPI silicon growth
Assignee: Hitachi Ltd
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Filing: 1992-03-30
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Granted: 1993-08-10
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Expires: 2012-03-30
Abstract
Abstract Herein disclosed is an improved bipolar transistor manufacturing method which adopts an EBT (Epitaxial Base Transistor) structure using an SPESG (Selective Poly-and-Epitaxial-Silicon Growth) technique. Specifically, the method of manufacturing a bipolar transistor according to the present invention comprises the steps of: forming an isolation oxide layer to enclose an active region of a single crystal semiconductor substrate and to have a lower surface than that of the substrate of said active region; simultaneously forming a single crystal silicon layer over the substrate surface of said active region and a polycrystal silicon layer to become integral with said single crystal silicon layer over the surface of said isolation oxide layer by simultaneously growing silicon films over the substrate surface of said active region and the surface of said isolation oxide layer; and forming an active region of a semiconductor element in said single crystal silicon layer.
Inventors
- 👤 Atsumi Aoki
- 👤 Hizuru Yamaguchi
- 👤 Nobuo Owada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:09
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10D10/40; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; Y; Y10; Y10S; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
135 words
A method of manufacturing a semiconductor integrated circuit device having a bipolar transistor, comprising the steps of: forming an isolation oxide layer to enclose an active region of a single crystal semiconductor substrate and to have a lower surface than that of the substrate of said active region; simultaneously forming a single crystal silicon layer over the substrate surface of said active region and a polycrystal silicon layer to become integral with said single crystal silicon layer over the surface of said isolation oxide layer by simultaneously growing silicon films over the substrate surface of said active region and the surface of said isolation oxide layer; and forming an operative region of said bipolar transistor in said single crystal silicon layer and turning said polycrystal silicon layer into a lead-out layer of said operative region.
Claim 2
Independent Claim
135 words
A method of manufacturing a semiconductor integrated circuit device having a bipolar transistor, comprising the steps of: forming an isolation oxide layer to enclose an active region of a single crystal semiconductor substrate and to have a lower surface than that of the substrate of said active region; simultaneously forming a single crystal silicon layer over the substrate surface of said active region and a polycrystal silicon layer to become integral with said single crystal silicon layer over the surface of said isolation oxide layer by simultaneously growing silicon films over the substrate surface of said active region and the surface of said isolation oxide layer; and forming an operative region of said bipolar transistor in said single crystal silicon layer and turning said polycrystal silicon layer into a lead-out layer of said operative region.
Claim 3
Dependent Claim
73 words
A method according to claim 1, wherein the step of forming the operative region of said bipolar transistor includes the sub-steps of: forming a base region of a first conductivity type by doping said single crystal silicon layer with an impurity of the first conductivity type; and forming an emitter region of a second conductivity type by doping the principal face of said base region with an impurity of the second conduction type.
Claim 4
Dependent Claim
62 words
A method according to claim 2, wherein the step of turning said polycrystal silicon layer into the lead-out layer of said operative region includes the sub-steps of: forming a base lead-out layer by doping said polycrystal silicon layer with an impurity of the first conductivity type; and connecting said base lead-out layer electrically with said base region of the first conductivity type.
Claim 5
Dependent Claim
56 words
A method according to claim 1, wherein the step of forming said isolation oxide layer includes the sub-steps of: etching the principal face of said single crystal semiconductor substrate in a manner of enclosing the active region of said single crystal semiconductor substrate; and thermally oxidizing the surface of the etched single crystal semiconductor substrate selectively.
Claim 6
Independent Claim
121 words
A method of manufacturing a semiconductor integrated circuit device having a bipolar transistor, comprising the steps of: forming an isolation oxide layer to enclose an active region of a single crystal semiconductor substrate and to have a lower surface than that of the substrate of said active region; simultaneously forming a single crystal silicon layer over the substrate surface of said active region and a polycrystal silicon layer to become integral with said single crystal silicon layer over the surface of said isolation oxide layer by simultaneously growing silicon films over the substrate surface of said active region and the surface of said isolation oxide layer; and forming an active region of a semiconductor element in said single crystal silicon layer.
Claim 7
Independent Claim
121 words
A method of manufacturing a semiconductor integrated circuit device having a bipolar transistor, comprising the steps of: forming an isolation oxide layer to enclose an active region of a single crystal semiconductor substrate and to have a lower surface than that of the substrate of said active region; simultaneously forming a single crystal silicon layer over the substrate surface of said active region and a polycrystal silicon layer to become integral with said single crystal silicon layer over the surface of said isolation oxide layer by simultaneously growing silicon films over the substrate surface of said active region and the surface of said isolation oxide layer; and forming an active region of a semiconductor element in said single crystal silicon layer.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1996-08-09 | 1997-02-08 | 1997-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-09 | 2001-02-08 | 2001-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-09 | 2005-02-08 | 2005-08-10 | $7700.00 | Window Closed / Lapsed |