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US5604153A
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Process for thin film formation
Assignee: Individual
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Filing: 1995-06-07
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Granted: 1997-02-18
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Expires: 2015-06-07
Abstract
Abstract A process for thin film formation comprises selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to thereby form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.
Inventors
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:51
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
86 words
A process for forming a thin film on a substrate, which comprises the steps: (a) treating a surface of the substrate to provide hydrogen atoms thereon; (b) selectively irradiating the surface with an energy beam to form an irradiated region and a non-irradiated region on the surface; (c) subjecting the surface to an oxidizing atmosphere to oxidize the irradiated region; and (d) selectively forming a thin film on the non-irradiated region by chemical vapor deposition, wherein the chemical vapor deposition is conducted with alkylaluminumhydride and hydrogen.
Claim 2
Dependent Claim
86 words
A process for forming a thin film on a substrate, which comprises the steps: (a) treating a surface of the substrate to provide hydrogen atoms thereon; (b) selectively irradiating the surface with an energy beam to form an irradiated region and a non-irradiated region on the surface; (c) subjecting the surface to an oxidizing atmosphere to oxidize the irradiated region; and (d) selectively forming a thin film on the non-irradiated region by chemical vapor deposition, wherein the chemical vapor deposition is conducted with alkylaluminumhydride and hydrogen.
Claim 3
Dependent Claim
15 words
The process according to claim 1, wherein the energy beam is an oxygen ion beam.
Claim 4
Dependent Claim
25 words
The process according to claim 1, wherein the steps (b) and (c) are performed by conducting irradiation of the energy beam in an oxidizing atmosphere.
Claim 5
Dependent Claim
23 words
The process according to claim 1, wherein the oxidizing atmosphere comprises at least one selected from oxygen, ozone and moisture in the atmosphere.
Claim 6
Dependent Claim
20 words
A process for thin film formation according to claim 1, wherein the surface treatment is carried out with hydrofluoric acid.
Claim 7
Dependent Claim
22 words
A process for thin film formation according to claim 1, wherein the energy beam is an electron beam or an ion beam.
Claim 8
Dependent Claim
17 words
A process for thin film formation according to claim 1, wherein the substrate is a semiconductor substrate.
Claim 9
Dependent Claim
17 words
A process for thin film formation according to claim 1, wherein the alkylaluminum hydride is dimethylaluminum hydride.
References Cited (Backward Citations)
US4460618A
Cited
JPH02137313A
Cited
EP0425084A1
Cited
US5179042A
Cited
US5196372A
Cited
US5091210A
Cited
US5180687A
Cited
US5217756A
Cited
US5208187A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-18 | 2000-08-19 | 2001-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-18 | 2004-08-19 | 2005-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-18 | 2008-08-19 | 2009-02-18 | $7700.00 | Window Closed / Lapsed |