US5604153A
Expired / Lapsed
US
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Process for thin film formation
Assignee: Individual
•
Filing: 1995-06-07
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Granted: 1997-02-18
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Expires: 2015-06-07
Abstract
Abstract A process for thin film formation comprises selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to thereby form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.
Inventors
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:45
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
86 words
A process for forming a thin film on a substrate, which comprises the steps: (a) treating a surface of the substrate to provide hydrogen atoms thereon; (b) selectively irradiating the surface with an energy beam to form an irradiated region and a non-irradiated region on the surface; (c) subjecting the surface to an oxidizing atmosphere to oxidize the irradiated region; and (d) selectively forming a thin film on the non-irradiated region by chemical vapor deposition, wherein the chemical vapor deposition is conducted with alkylaluminumhydride and hydrogen.
Claim 2
Dependent Claim
86 words
A process for forming a thin film on a substrate, which comprises the steps: (a) treating a surface of the substrate to provide hydrogen atoms thereon; (b) selectively irradiating the surface with an energy beam to form an irradiated region and a non-irradiated region on the surface; (c) subjecting the surface to an oxidizing atmosphere to oxidize the irradiated region; and (d) selectively forming a thin film on the non-irradiated region by chemical vapor deposition, wherein the chemical vapor deposition is conducted with alkylaluminumhydride and hydrogen.
Claim 3
Dependent Claim
15 words
The process according to claim 1, wherein the energy beam is an oxygen ion beam.
Claim 4
Dependent Claim
25 words
The process according to claim 1, wherein the steps (b) and (c) are performed by conducting irradiation of the energy beam in an oxidizing atmosphere.
Claim 5
Dependent Claim
23 words
The process according to claim 1, wherein the oxidizing atmosphere comprises at least one selected from oxygen, ozone and moisture in the atmosphere.
Claim 6
Dependent Claim
20 words
A process for thin film formation according to claim 1, wherein the surface treatment is carried out with hydrofluoric acid.
Claim 7
Dependent Claim
22 words
A process for thin film formation according to claim 1, wherein the energy beam is an electron beam or an ion beam.
Claim 8
Dependent Claim
17 words
A process for thin film formation according to claim 1, wherein the substrate is a semiconductor substrate.
Claim 9
Dependent Claim
17 words
A process for thin film formation according to claim 1, wherein the alkylaluminum hydride is dimethylaluminum hydride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-18 | 2000-08-19 | 2001-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-18 | 2004-08-19 | 2005-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-18 | 2008-08-19 | 2009-02-18 | $7700.00 | Window Closed / Lapsed |