Semiconductor memory device with reduced consumption power for bit line precharge

Claim 1

A semiconductor memory device comprising: a memory cell array including a plurality of word lines, a plurality of bit lines, and a plurality of memory cells connected to each of the word lines and bit lines, respectively; a word line selector connected to said word lines for selecting one of said word lines in accordance with a row address signal; a bit line selector connected to said bit lines for selecting one of said bit lines in accordance with a column address signal; a precharger for setting the potential of each of said bit lines to a potential before data is read out onto the bit lines from said memory cells; and a controller responsive to said row address signal to activate said precharger to precharge said bit lines, when different word lines are selected in succession by said word line selector in response to a change in said row address signal; an address buffer for maintaining address signals including the row address signal and the column address signal, such that said row address signal is supplied to said word line selector and said controller and said column address signal is supplied to said bit line selector; a memory cell array including a plurality of word lines, a plurality of bit lines, and a plurality of memory cells connected to each of the word lines and bit lines, respectively; a word line selector connected to said word lines for selecting one of said word lines in accordance with an address signal; a bit line selector connected to said bit lines for selecting one of said bit lines in accordance with an address signal; a precharger for setting the potential of each of said bit lines to a potential before data is read out onto the bit lines from said memory cells; a controller responsive to said address signal to activate said precharger when different word lines are selected in succession by said word line selector, further comprising an address buffer for maintaining said address signal, wherein said address signal includes a row address signal and a column address signal maintained by said address buffer, said row address signal being supplied by the address buffer to said word line selector and said column address signal being supplied by the address buffer to said bit line selector; an address latch for latching a plurality of primary row address bit signals and outputting them as secondary row address signals; a discriminator for determining whether or not said secondary row address signal and said primary row address signal match, and for outputting a discrimination signal in response thereto; and an output circuit for receiving the output signal from the discriminator, and for outputting a signal to activate said precharger when the primary and secondary signals do not match; wherein said address latch comprises a plurality of flip-flops supplied with said primary row address bit signals, wherein said discriminator comprises a plurality of exclusive OR circuits supplied with the output from said flip-flops; and wherein said output circuit comprises an OR circuit to which the output signal from each of said exclusive OR circuits is input, said semiconductor memory device further comprising a clock generator for supplying the clock signal to said flip-flops and address buffer, to control the latching of said primary row address signals by said flip-flops.