US5597766A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for detaching chips from a wafer
Assignee: Infineon Technologies AG
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Filing: 1994-05-20
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Granted: 1997-01-28
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Expires: 2014-05-20
Abstract
Abstract Method for detaching chips in the silicon layer of a SOI substrate, wherein trenches are etched between the chips down to the insulating layer of the SOI substrate. Spacers for the passivation of SiO 2 layers of the chips are produced. Finally, the chips are detached by etching the insulating layer off.
Inventors
- 👤 Franz Neppl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:20
CPC Classifications
H; H10; H10P; H10P54/00; Y; Y10; Y10S; Y10S148/00; Y10S148/028; Y10S148/05; Y10S148/135; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
74 words
Method for detaching chips produced in a silicon layer of an SOI substrate wafer from said wafer, comprising the steps of: etching trenches between said chips proceeding from a side of said wafer on which said chips are disposed to remove material that carries said chips, said trenches extending down to an insulating layer of said SOI substrate; and selectively etching said insulating layer, thereby removing same to detach said chips from one another.
Claim 2
Dependent Claim
74 words
Method for detaching chips produced in a silicon layer of an SOI substrate wafer from said wafer, comprising the steps of: etching trenches between said chips proceeding from a side of said wafer on which said chips are disposed to remove material that carries said chips, said trenches extending down to an insulating layer of said SOI substrate; and selectively etching said insulating layer, thereby removing same to detach said chips from one another.
Claim 3
Dependent Claim
41 words
Method according to claim 1, further comprising the step of covering uncovered surfaces of said chips with a passivation layer so that said insulating layer can be selectively etched and such that said trenches are not filled with said passivation layer.
Claim 4
Dependent Claim
30 words
Method according to claim 2, wherein said step of covering the uncovered surfaces of said chips with a passivation layer is further defined by providing SiN for said passivation layer.
Claim 5
Dependent Claim
49 words
Method according to claims 1, further comprising the steps of: filling said trenches with the same material as said insulating layer before selectively etching said insulating layer; and removing said SOI substrate down to said insulating layer at the side of said insulating layer facing away from said chips.
Claim 6
Dependent Claim
37 words
Method according to claim 4, wherein said step of filling said trenches with the same material as said insulating layer before selectively etching said insulating layer is further defined by filling said trenches with SiO 2 .
Claim 7
Dependent Claim
38 words
Method according to claim 1, further comprising the step of removing said material carrying said chips to thin said wafer from a side lying opposite said chips to uncover said trenches from said side lying opposite said chips.
Claim 8
Dependent Claim
23 words
Method according to claim 6, further comprising the steps of: filling said etched trenches with filler; thinning said wafer; and removing said filler.
Claim 9
Dependent Claim
26 words
Method according to claim 7, wherein said step of filling said etched trenches with filler is further defined by filling said trenches with SiO 2 .
Claim 10
Dependent Claim
21 words
Method according to claim 7, wherein said step of thinning said wafer is further defined by thinning said wafer by thin-grinding.
Claim 11
Dependent Claim
15 words
Method according to claim 1, further comprising the step of thinning said wafer by thin-grinding.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |