US5592004A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries
Assignee: Denso Corp
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Filing: 1995-09-28
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Granted: 1997-01-07
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Expires: 2015-09-28
Abstract
Abstract A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si X N Y H Z , where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5×10 4 nm 2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.
Inventors
- 👤 Muneo Tamura
- 👤 Takeshi Yamauchi
- 👤 Katuhide Niwa
- 👤 Takeshi Fukazawa
- 👤 Akira Kuroyanagi
- 👤 Tooru Yamaoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/347; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
84 words
A semiconductor device comprising: a semiconductor element; and a silicon nitride film covering the semiconductor element and being made of Si X N Y H Z , where X, Y, and Z denote atomic fractions of Si, N, and H respectively, the silicon nitride film relating to an optical absorption edge wavelength shorter than 254 nm, wherein a mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5×10 4 nm 2 or more.
Claim 2
Dependent Claim
84 words
A semiconductor device comprising: a semiconductor element; and a silicon nitride film covering the semiconductor element and being made of Si X N Y H Z , where X, Y, and Z denote atomic fractions of Si, N, and H respectively, the silicon nitride film relating to an optical absorption edge wavelength shorter than 254 nm, wherein a mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5×10 4 nm 2 or more.
Claim 3
Dependent Claim
26 words
The semiconductor device of claim 1, wherein the semiconductor element comprises a nonvolatile memory element from which information can be erased by exposure to ultraviolet rays.
Claim 4
Dependent Claim
115 words
A semiconductor device comprising: a substrate; a wiring line provided on the substrate and having a flat portion and an edge; a semiconductor element provided on the substrate; and a silicon nitride film provided on the substrate and covering the wiring line and the semiconductor element, the silicon nitride film relating to an optical absorption edge wavelength shorter than 254 nm; wherein a thickness of the silicon nitride film on the flat portion of the wiring line is denoted by "a", and a smallest thickness of the silicon nitride film which is measured from the edge of the wiring line is denoted by "b", and wherein a ratio "b/a" is equal to 56% or more.
Claim 5
Dependent Claim
115 words
A semiconductor device comprising: a substrate; a wiring line provided on the substrate and having a flat portion and an edge; a semiconductor element provided on the substrate; and a silicon nitride film provided on the substrate and covering the wiring line and the semiconductor element, the silicon nitride film relating to an optical absorption edge wavelength shorter than 254 nm; wherein a thickness of the silicon nitride film on the flat portion of the wiring line is denoted by "a", and a smallest thickness of the silicon nitride film which is measured from the edge of the wiring line is denoted by "b", and wherein a ratio "b/a" is equal to 56% or more.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-07 | 2000-07-08 | 2001-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-07 | 2004-07-08 | 2005-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-07 | 2008-07-08 | 2009-01-07 | $7700.00 | Window Closed / Lapsed |