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US5483097A Expired / Lapsed US ⏱️ 0.0 years remaining

Device protecting layer

Assignee: Denso Corp
•
Filing: 1994-01-13
•
Granted: 1996-01-09
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Expires: 2014-01-13
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Abstract

Abstract A device protecting film having a UV transmissible SiN film, wherein the film is formed by a plasma CVD process in such a manner that a composition ratio Si/N falls within the range of 0.75 to 0.87, a Si-H bond concentration Z (cm-3) in the SiN film has a value near the value Z expressed by the following formula in accordance with a value X of Si/N: Z=1.58x1022X-9.94x1021 and, at the same time, a hydrogen bond concentration Y (cm-3) determining the Si-H bond concentration has a value near the value Y expressed by the following formula in accordance with X: Y=1.01x1022X+0.54x1022 The resulting SiN film transmits ultraviolet rays having a wavelength of 254 nm, reduces a stress inside the film, and has high moisture resistance.

Inventors

  • 👤 Hiroshi Ohtsuki
  • 👤 Fumio Ohara
  • 👤 Shoji Toyoshima

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 08:52
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/481; H10W74/10; H10W74/131; H10W74/137

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 97 words
A device protecting film made of hydrogen-containing silicon nitride, wherein a hydrogen bond concentration Y (cm -3 ) and a ratio Si/N of silicon to nitrogen, X satisfy the following formula: 1.01×10.sup.22 X+α<Y<1.01×10.sup.22 X+β, where α=4.9×10.sup.21, β=5.9×10.sup.21 ; (1) and in said hydrogen bond concentration Y (cm -3 ), the hydrogen-silicon bond concentration Z (cm -3 ) satisfies the following formula with respect to said Si/N ratio X: 1.58×10.sup.22 X-δ<Z<1.58×10.sup.22 -δ, where γ=10.6×10.sup.21, δ=9.2×10.sup.21 ( 2) wherein said hydrogen bond concentration (Y) and hydrogen-silicon bond concentration (Z) serve to reduce the internal stress of said protective film.
Claim 2
Independent Claim 97 words
A device protecting film made of hydrogen-containing silicon nitride, wherein a hydrogen bond concentration Y (cm -3 ) and a ratio Si/N of silicon to nitrogen, X satisfy the following formula: 1.01×10.sup.22 X+α<Y<1.01×10.sup.22 X+β, where α=4.9×10.sup.21, β=5.9×10.sup.21 ; (1) and in said hydrogen bond concentration Y (cm -3 ), the hydrogen-silicon bond concentration Z (cm -3 ) satisfies the following formula with respect to said Si/N ratio X: 1.58×10.sup.22 X-δ<Z<1.58×10.sup.22 -δ, where γ=10.6×10.sup.21, δ=9.2×10.sup.21 ( 2) wherein said hydrogen bond concentration (Y) and hydrogen-silicon bond concentration (Z) serve to reduce the internal stress of said protective film.
Claim 3
Dependent Claim 17 words
A device protecting film according to claim 1, wherein said Si/N ratio is not greater than 0.87.
Claim 4
Dependent Claim 16 words
A device protecting film according to claim 1, wherein said Si/N ratio is at least 0.75.
Claim 5
Dependent Claim 16 words
A device protecting film according to claim 2, wherein said Si/N ratio is at least 0.75.
Claim 6
Dependent Claim 15 words
A device protecting film according to claim 1, wherein said device is a semiconductor device.
Claim 7
Dependent Claim 22 words
A semiconductor device having said protecting film according to claim 1 formed on a semiconductor substrate having a semiconductor element formed thereon.
Claim 8
Dependent Claim 24 words
A semiconductor device according to claim 6, wherein said device protecting film is in direct contact with a metal wiring of said semiconductor element.

References Cited (Backward Citations)

JPS6021531A Cited
JPS62501600A Cited
JPS6353703A Cited
JPH01134935A Cited
JPH02162773A Cited
JPH03129734A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-01-08 1999-07-10 2000-01-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-01-08 2003-07-10 2004-01-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-01-08 2007-07-10 2008-01-09 $7700.00 Window Closed / Lapsed

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