Device protecting layer
Abstract
Abstract A device protecting film having a UV transmissible SiN film, wherein the film is formed by a plasma CVD process in such a manner that a composition ratio Si/N falls within the range of 0.75 to 0.87, a Si-H bond concentration Z (cm-3) in the SiN film has a value near the value Z expressed by the following formula in accordance with a value X of Si/N: Z=1.58x1022X-9.94x1021 and, at the same time, a hydrogen bond concentration Y (cm-3) determining the Si-H bond concentration has a value near the value Y expressed by the following formula in accordance with X: Y=1.01x1022X+0.54x1022 The resulting SiN film transmits ultraviolet rays having a wavelength of 254 nm, reduces a stress inside the film, and has high moisture resistance.
Inventors
- 👤 Hiroshi Ohtsuki
- 👤 Fumio Ohara
- 👤 Shoji Toyoshima
Bibliographic Details
Claims Analysis
Total Claims: 8References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2003-01-08 | 2003-07-10 | 2004-01-09 | $3760.00 | Window Closed / Lapsed |
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