Semiconductor device

Abstract

Abstract PURPOSE:To increase the transmittance of ultraviolet radiation at the time of bit erasing, and to decrease the reflectivity, by forming an antireflection film on a silicon oxide film in a semiconductor device of ultraviolet radiation erasing type. CONSTITUTION:In a silicon substrate 1, a source drain layer 8 is formed, on the surface of which a floating gate 3, a control gate 4, and a silicon oxide film 2 are formed to make up a semiconductor device of ultraviolet radiation erasing type. In a semiconductor device having a constitution like this, an antireflection film 5 composed of a silicon nitride film or a TiO2 film is formed on the surface of the silicon oxide film 2. By making up a constitution like this, the transmittance of ultraviolet radiation can be increased at the time of bit erasing, and the reflectivity is decreased.

Inventors

• 👤 Eisuke Tanaka

Bibliographic Details