Semiconductor device

Abstract

Abstract PURPOSE:To acquire the semiconductor device of stable performance characteristics by obtaining a boundary condition of the physicochemical characteristics of a silicon nitride film prepared through a plasma CVD method. CONSTITUTION:The silicon nitride film is formed through the plasma CVD method at a temperature of 500 deg.C or less. I=Ioe<-alphat> is formed when the intensity of transmitted light is I, the intensity of incident light Io, the thickness of the silicon nitride film t and an optical absorption coefficient alpha, and a wavelength of I=0.1XIo is used as an optical absorption end when alpha is 10<4>/loge. A wavelength of the optical absorption end is made 235nm or less at that time. An infrared absorption coefficient based on a Si-H union is made 450cm<-1> or less in an infrared absorption spectrum close to 2,150cm<-1>. The silicon nitride film having such physical properties is used as the final protective film or inter-layer insulating film of the semiconductor device.

Inventors

• 👤 Tsunehisa Ueno
• 👤 上野　恒久
• 👤 Shinji Miyazaki
• 👤 伸治 宮崎
• 👤 Riichiro Aoki
• 👤 利一郎 青木

Bibliographic Details