US5591668A — Laser annealing method for a semiconductor thin f…

Claim 1

Independent Claim 81 words

A laser annealing method for a semiconductor thin film, for irradiating the semiconductor thin film with a laser beam having a section whose outline consists of a plurality of straight-line portions which form sides of a square or a rectangle, so as to change the crystallinity of the semiconductor thin film, wherein the semiconductor thin film is overlap-irradiated with the laser beam while the laser beam is shifted in a direction different from all directions along the plurality of straight-line portions.

Claim 2

Dependent Claim 81 words

A laser annealing method for a semiconductor thin film, for irradiating the semiconductor thin film with a laser beam having a section whose outline consists of a plurality of straight-line portions which form sides of a square or a rectangle, so as to change the crystallinity of the semiconductor thin film, wherein the semiconductor thin film is overlap-irradiated with the laser beam while the laser beam is shifted in a direction different from all directions along the plurality of straight-line portions.

Claim 3

Dependent Claim 48 words

A method according to claim 1, wherein the semiconductor thin film is irradiated with the laser beam while the laser beam is shifted in a direction inclined by 45±30° with regard to one of the straight-line portions included in the outline of the section of the laser beam.

Claim 4

Dependent Claim 37 words

A method according to claim 1, wherein the laser beam is obtained by optically splitting laser light emitted from a laser light source into a plurality of beam elements and re-synthesizing the plurality of split beam elements.

Claim 5

Dependent Claim 25 words

A method according to claim 3, wherein the intensity of the laser beam exhibits a substantially trapezoidal distribution across the section of the laser beam.

Claim 6

Dependent Claim 29 words

A method according to claim 1, wherein the straight-line portion included in the outline of the section of the laser beam has a length of 5 mm or more.

Claim 7

Dependent Claim 17 words

A method according to claim 1, wherein the semiconductor thin film is a non-singlecrystalline silicon thin film.

Claim 8

Dependent Claim 17 words

A method according to claim 1, wherein the laser beam is a beam from an excimer laser.

Claim 9

Dependent Claim 177 words

A laser annealing method for a semiconductor thin film, for irradiating the semiconductor thin film with a pulsed laser beam, so as to change the crystallinity of the semiconductor thin film, wherein when a region of the semiconductor thin film whose area corresponds to a cross-sectional area of the laser beam is irradiated with at least four consecutive laser pulses while the laser beam is shifted in a line, a sub-region of the semiconductor thin film which is initially irradiated with a peripheral portion of the laser beam having a beam intensity that is weaker than a central portion of said laser beam is subsequently irradiated with the peripheral portion of the laser beam for three or less consecutive times, wherein the laser beam has a section whose outline consists of a plurality of straight-line portions which form the sides of a square or a rectangle, and wherein a direction of shifting in said straight line is different from all directions of the plurality of straight-line portions which form the sides of the square or the rectangle.

Claim 10

Dependent Claim 177 words

A laser annealing method for a semiconductor thin film, for irradiating the semiconductor thin film with a pulsed laser beam, so as to change the crystallinity of the semiconductor thin film, wherein when a region of the semiconductor thin film whose area corresponds to a cross-sectional area of the laser beam is irradiated with at least four consecutive laser pulses while the laser beam is shifted in a line, a sub-region of the semiconductor thin film which is initially irradiated with a peripheral portion of the laser beam having a beam intensity that is weaker than a central portion of said laser beam is subsequently irradiated with the peripheral portion of the laser beam for three or less consecutive times, wherein the laser beam has a section whose outline consists of a plurality of straight-line portions which form the sides of a square or a rectangle, and wherein a direction of shifting in said straight line is different from all directions of the plurality of straight-line portions which form the sides of the square or the rectangle.

Claim 11

Dependent Claim 36 words

A method according to claim 8, wherein the intensity distribution of the laser beam is substantially flat in the central portion of the laser beam, and sharply changes in the peripheral portion of the laser beam.

Claim 12

Dependent Claim 31 words

A method according to claim 9, wherein the beam intensity of the peripheral portion of the laser beam is not sufficiently strong for the semiconductor thin film to be completely melted.

Claim 13

Dependent Claim 22 words

A method according to claim 10, wherein the width of the peripheral portion of the laser beam is 2 mm or less.

Claim 14

Dependent Claim 37 words

A method according to claim 8, wherein the laser beam is obtained by optically splitting laser light emitted from a laser light source into a plurality of beam elements and re-synthesizing the plurality of split beam elements.

Claim 15

Dependent Claim 151 words

A laser annealing method for a semiconductor thin film, comprising irradiating the semiconductor thin film with a pulsed laser began, wherein when said pulsed laser beam is scanned in a straight line, a region of the semiconductor thin film whose area corresponds to a total cross-sectional area of the laser beam has a first subregion which is irradiated with at least four consecutive laser pulses, while no other subregion of said first region is irradiated with a peripheral portion of the laser beam more than three consecutive times, the peripheral portion having a beam intensity that is weaker than the central portion of said laser began, wherein the laser beam has a section whose outline consists of a plurality of straight-line portions which form the sides of a square or a rectangle, and wherein a direction of said straight line is different from all directions of the plurality of straight-line portions.

Claim 16

Dependent Claim 151 words

A laser annealing method for a semiconductor thin film, comprising irradiating the semiconductor thin film with a pulsed laser began, wherein when said pulsed laser beam is scanned in a straight line, a region of the semiconductor thin film whose area corresponds to a total cross-sectional area of the laser beam has a first subregion which is irradiated with at least four consecutive laser pulses, while no other subregion of said first region is irradiated with a peripheral portion of the laser beam more than three consecutive times, the peripheral portion having a beam intensity that is weaker than the central portion of said laser began, wherein the laser beam has a section whose outline consists of a plurality of straight-line portions which form the sides of a square or a rectangle, and wherein a direction of said straight line is different from all directions of the plurality of straight-line portions.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2000-01-07	2000-07-08	2001-01-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2004-01-07	2004-07-08	2005-01-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2008-01-07	2008-07-08	2009-01-07	$7700.00	Window Closed / Lapsed

Laser annealing method for a semiconductor thin film

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