US5589714A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epoxy polymer filled with aluminum nitride-containing polymer and semiconductor devices encapsulated with a thermosetting resin containing aluminum nitride particles
Assignee: Dow Chemical Co
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Filing: 1995-03-24
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Granted: 1996-12-31
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Expires: 2015-03-24
Abstract
Abstract Semiconductor devices are encapsulated in a thermosetting resin filled with aluminum nitride particles. The aluminum nitride particles have an outer layer of Al--O--N, into which is incorporated amorphous Si--O, which renders them hydrolytically stable. The aluminum nitride particles impart very high thermal conductivity to the cured resin. In addition, the cured resin has a CTE similar to that of the encapsulated semiconductor device, and has excellent dielectric properties.
Inventors
- 👤 Kevin E. Howard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 19:59
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/80; C04B41/81; C01; C01B; C01B21/00; C01B21/06; C01B21/072; C01B21/0728; C04B41/45; C04B41/4584; C08; C08K; C08K9/00; C08K9/02; C08K9/04; C08K9/06; C09; C09C; C09C1/00; C09C1/40; C09C3/00; C09C3/006; C01P; C01P2004/00; C01P2004/80; C01P2004/82; C01P2004/84; C01P2004/86
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
An encapsulated semiconductor device, comprising: (a) a semiconductor device, which is encapsulated in (b) a cured thermosetting resin filled with from about 1 to about 90 weight %, based on the combined weight of the resin and aluminum nitride particles, of aluminum nitride particles which have an outer layer of Al--O--N into which amorphous Si--O is incorporated, and which additionally have a layer of Si--O or Si--O--Al on the surface of said Al--O--N layer; and (c) a plurality of conductive leads which are in electrical connection with said semiconductor device and which extend through the cured thermosetting resin.
Claim 2
Dependent Claim
98 words
An encapsulated semiconductor device, comprising: (a) a semiconductor device, which is encapsulated in (b) a cured thermosetting resin filled with from about 1 to about 90 weight %, based on the combined weight of the resin and aluminum nitride particles, of aluminum nitride particles which have an outer layer of Al--O--N into which amorphous Si--O is incorporated, and which additionally have a layer of Si--O or Si--O--Al on the surface of said Al--O--N layer; and (c) a plurality of conductive leads which are in electrical connection with said semiconductor device and which extend through the cured thermosetting resin.
Claim 3
Dependent Claim
42 words
The encapsulated semiconductor device of claim 1, wherein said cured thermosetting resin is filled with from about 40 to about 85 weight % of said aluminum nitride particles, based on the combined weight of the epoxy resin and the aluminum nitride particles.
Claim 4
Dependent Claim
18 words
The encapsulated semiconductor device of claim 2 which has a thermal conductivity of at least about 2.5 W/mK.
Claim 5
Dependent Claim
15 words
The encapsulated semiconductor device of claim 2 wherein said thermosetting resin is an epoxy resin.
Claim 6
Dependent Claim
29 words
The encapsulated semiconductor device of claim 4 wherein said conductive leads are in the form of a lead frame, and said leads are wire bonded to said semiconductor device.
Claim 7
Dependent Claim
18 words
The encapsulated semiconductor device of claim 5 wherein said wire bonds are encapsulated in said cured thermosetting resin.
Claim 8
Dependent Claim
24 words
The encapsulated semiconductor device of claim 6 wherein said AlN particles additionally have a layer of Si--O--Al on the surface of said Al--O--N layer.
Claim 9
Dependent Claim
45 words
An epoxy polymer filled with an aluminum nitride-containing powder, wherein the powder comprises AlN particles which have an outer layer of Al--O--N in which amorphous Si--O is incorporated, and which additionally have a layer of Si--O or Si--O--Al on the surface of said Al--O--N layer.
Claim 10
Dependent Claim
45 words
An epoxy polymer filled with an aluminum nitride-containing powder, wherein the powder comprises AlN particles which have an outer layer of Al--O--N in which amorphous Si--O is incorporated, and which additionally have a layer of Si--O or Si--O--Al on the surface of said Al--O--N layer.
Claim 11
Dependent Claim
38 words
The filled epoxy polymer of claim 8 which is filled with from about 40 to about 85 weight % of said aluminum nitride particles, based on the combined weight of the epoxy resin and the aluminum nitride particles.
Claim 12
Dependent Claim
24 words
The filled epoxy polymer of claim 8 wherein said AlN particles additionally have a layer of Si--O--Al on the surface of said Al--O--N layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-31 | 2000-07-01 | 2000-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-31 | 2004-07-01 | 2004-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-31 | 2008-07-01 | 2008-12-31 | $7700.00 | Window Closed / Lapsed |