US5430330A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device, resin for sealing same and method of fabricating same
Assignee: Mitsubishi Electric Corp
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Filing: 1993-06-18
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Granted: 1995-07-04
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Expires: 2013-06-18
Abstract
Abstract A semiconductor device where electrode terminals (2), elements (6) and wires (7) are disposed on a base plate (5) of a case (4) filled with only epoxy resin (1). The epoxy resin (1) contains impurities such as halogen and alkaline metallic salts in an amount of not more than 5 ppm and has a linear expansion coefficient of 5x10-6 to 25x10-6 when hardened. The semiconductor device provides for direct sealing of the components, its size and cost are therefore reduced.
Inventors
- 👤 Shinobu Takahama
- 👤 Akinobu Tamaki
- 👤 Satoshi Hirakawa
- 👤 Hitoshi Yamano
- 👤 Teruki Hyougatani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 21:03
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/473; H10W74/01; H10W76/00; H10W76/40; H10W76/42; H10W76/47; H05; H05K; H05K3/00; H05K3/22; H05K3/28; H05K3/285; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5524; H10W72/851; H10W72/874; H10W72/884
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
206 words
A semiconductor device comprising: a box-shaped case having a bottom; electronic components provided on an inner surface of said bottom; and a resin, filled and hardened in said box-shaped case for directly sealing said electronic components, said resin containing 10 to 30 percent by weight of an epoxy resin ingredient containing 100 parts of epoxy resin which contains only at least one material selected from the group consisting of bisphenol A, cycloaliphatic epoxy, and bisphenol F, 0 to 100 parts of acid anhydride, and 0.1 to 10 parts of a catalyst, and 90 to 70 percent by weight of a filler ingredient in the form of particles containing at least one material selected from the group consisting of fused quartz including crushed particles and spherical particles, quartz, alumina, and aluminum nitride, wherein said spherical particles of said fused quartz include smaller particles having diameters of less than 3 μm and larger particles having diameters in the range of 20-300 μm, preferably 30-150 μm, mixed together, and said crushed particles of said fused quartz have a diameter in the range of 3 to 30 μm, and wherein a linear expansion coefficient of said resin when hardened is in the range of 5×10 -6 to 25×10 -6 /°C.
Claim 2
Dependent Claim
206 words
A semiconductor device comprising: a box-shaped case having a bottom; electronic components provided on an inner surface of said bottom; and a resin, filled and hardened in said box-shaped case for directly sealing said electronic components, said resin containing 10 to 30 percent by weight of an epoxy resin ingredient containing 100 parts of epoxy resin which contains only at least one material selected from the group consisting of bisphenol A, cycloaliphatic epoxy, and bisphenol F, 0 to 100 parts of acid anhydride, and 0.1 to 10 parts of a catalyst, and 90 to 70 percent by weight of a filler ingredient in the form of particles containing at least one material selected from the group consisting of fused quartz including crushed particles and spherical particles, quartz, alumina, and aluminum nitride, wherein said spherical particles of said fused quartz include smaller particles having diameters of less than 3 μm and larger particles having diameters in the range of 20-300 μm, preferably 30-150 μm, mixed together, and said crushed particles of said fused quartz have a diameter in the range of 3 to 30 μm, and wherein a linear expansion coefficient of said resin when hardened is in the range of 5×10 -6 to 25×10 -6 /°C.
Claim 3
Dependent Claim
19 words
The semiconductor device of claim 1, further comprising a heat sink provided on an outer surface of said bottom.
Claim 4
Dependent Claim
23 words
The semiconductor device of claim 1, wherein said linear expansion coefficient is in the range of 10×10 -6 to 22×10 -6 /° C.
Claim 5
Dependent Claim
32 words
The semiconductor device of claim 1, wherein said epoxy resin ingredient contains 100 parts of epoxy resin; 50 to 100 parts of acid anhydride; and 0.5 to 5 parts of a catalyst.
Claim 6
Dependent Claim
14 words
The semiconductor device of claim 1, wherein said epoxy resin essentially contains cycloaliphatic epoxy.
Claim 7
Dependent Claim
19 words
The semiconductor device of claim 5, wherein a ratio of bisphenol A to cycloaliphatic epoxy is 0-100:100 by weight.
Claim 8
Dependent Claim
28 words
The semiconductor device of claim 1, wherein said acid anhydride contains at least one material selected from the group consisting of methyl THPA, methyl MMPA, MNA, and DDSA.
Claim 9
Dependent Claim
25 words
The semiconductor device of claim 7, wherein said acid anhydride contains at least one material selected from the group consisting of methyl THPA and MNA.
Claim 10
Dependent Claim
27 words
The semiconductor device of claim 7, wherein said catalyst contains at least one material selected from the group consisting of imidazole derivatives, tertiary amine, and metallic salts.
Claim 11
Dependent Claim
25 words
The semiconductor device of claim 9, wherein said catalyst contains at least one material selected from the group consisting of imidazole derivatives and metallic salts.
Claim 12
Dependent Claim
25 words
The semiconductor device of claim 1, wherein said filler ingredient contains at least one material selected from the group consisting of fused quartz and alumina.
Claim 13
Dependent Claim
32 words
The semiconductor device of claim 1, wherein said resin further contains 3 to 10% by weight of a fire retardant ingredient selected from the group consisting of antimony trioxide and bromine compounds.
Claim 14
Dependent Claim
26 words
The semiconductor device of claim 12, wherein said fire retardant ingredient is at least one material selected from the group consisting of antimony trioxide and HBB.
Claim 15
Dependent Claim
27 words
The semiconductor device of claim 12, wherein a total amount of halogen and an alkaline metal ingredient contained in said resin is not more than 10 PPM.
Claim 16
Dependent Claim
27 words
The semiconductor device of claim 14, wherein said total amount of halogen and an alkaline metal ingredient contained in said resin is not more than 3 PPM.
Claim 17
Dependent Claim
24 words
The semiconductor device of claim 14, wherein a thermal conductivity of said resin when hardened is in the range of 0.5 to 20 Kcal/m.h.°C.
Claim 18
Dependent Claim
26 words
The semiconductor device of claim 16, wherein wherein said thermal conductivity of said resin when hardened is in the range of 0.7 to 2.0 Kcal/m.h.° C.
Claim 19
Dependent Claim
28 words
The semiconductor device of claim 16, wherein an adhesive strength under shear of said resin when hardened is in the range of 100 to 250 Kg/cm 2 (Fe/Fe).
Claim 20
Dependent Claim
26 words
The semiconductor device of claim 18, wherein said adhesive strength under shear of said resin when hardened is in the range of 150-250 Kg/cn 2 (Fe/Fe).
Claim 21
Dependent Claim
27 words
The semiconductor device of claim 18, wherein a transverse rupturing strength of said resin when hardened is in the range of 7 to 20 Kg/mm 2 .
Claim 22
Dependent Claim
24 words
The semiconductor device of claim 20, wherein said transverse rupturing strength of said resin when hardened is in the range of 10-20Kg/mm 2 .
Claim 23
Dependent Claim
27 words
The semiconductor device of claim 20, wherein a viscosity of said resin is in the range of 5,000 to 100,000 cps at a temperature of 25° C.
Claim 24
Dependent Claim
27 words
The semiconductor device of claim 22, wherein said viscosity of said resin is in the range of 5,000 to 50,000 cps at a temperature of 25° C.
Claim 25
Dependent Claim
28 words
The semiconductor device of claim 22, wherein a hardening time of said resin is in the range of 0.1 to 5 hours at a temperature of 125° C.
Claim 26
Dependent Claim
28 words
The semiconductor device of claim 24, wherein said hardening time of said resin is in the range of 0.1 to 3 hours at a temperature of 125° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-03 | 1999-01-02 | 1999-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-03 | 2003-01-02 | 2003-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-03 | 2007-01-02 | 2007-07-04 | $7700.00 | Window Closed / Lapsed |