Patent JPS58824A successfully refreshed from Google Patents.
Patent US5585012A successfully refreshed from Google Patents.
US5585012A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-cleaning polymer-free top electrode for parallel electrode etch operation
Assignee: Applied Materials Inc
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Filing: 1994-12-15
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Granted: 1996-12-17
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Expires: 2014-12-15
Abstract
Abstract A plasma etch reactor and a related method of its operation to provide self-cleaning of its top electrode, which is subject to being coated by polymer deposits during normal operation. In one form of the invention, radio-frequency (rf) power is applied to the top electrode on a continuous basis, but at a much lower power level than that of a primary rf power source used to supply power through a lower electrode, to generate and sustain a plasma in the reactor. The small rf power applied through the top electrode is selected to be of such a level as to remove deposits from the electrode continuously, as they are formed, but without removing any significant amount of electrode material. In another form of the invention, power is applied to the top electrode periodically during cleaning periods and power supply to the lower electrode is suspended during the cleaning periods. The two cleaning approaches may also be combined, with continuous cleaning being supplemented with occasional or periodic dry cleaning while etch processing is suspended.
Inventors
- 👤 Robert Wu
- 👤 Hyman J. Levinstein
- 👤 Hongching Shan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:27
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H01J37/32009; H01J37/32082; H01J37/32532; Y; Y10; Y10S; Y10S156/00; Y10S156/916; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
100 words
A method of operation of a plasma etch reactor having first and second electrodes supporting the plasma, the method comprising the steps of: supplying process gases to a plasma etch reactor chamber; supplying high-frequency power to the second electrode in the chamber, in support of a plasma in the chamber; and pumping used process gases from the chamber; and applying high-frequency power to the first electrode simultaneously with the step of supplying high-frequency power to the second electrode, to clean deposits from the first electrode and to reduce or eliminate the need for off-line dry cleaning of the first electrode.
Claim 2
Independent Claim
100 words
A method of operation of a plasma etch reactor having first and second electrodes supporting the plasma, the method comprising the steps of: supplying process gases to a plasma etch reactor chamber; supplying high-frequency power to the second electrode in the chamber, in support of a plasma in the chamber; and pumping used process gases from the chamber; and applying high-frequency power to the first electrode simultaneously with the step of supplying high-frequency power to the second electrode, to clean deposits from the first electrode and to reduce or eliminate the need for off-line dry cleaning of the first electrode.
Claim 3
Dependent Claim
78 words
A method as defined in claim 1, and further comprising the steps of: connecting power to the first electrode from a separate high-frequency power source of any selected frequency and of substantially lower power than is used to supply power to said one electrode; and wherein the power applied to the first electrode increases ion energy in the plasma and is selected to produce continuous cleaning of deposits from the first electrode without significant removal of electrode material.
Claim 4
Dependent Claim
33 words
The method of claim 1, in which the high-frequency power supplied to the first electrode to clean deposits is of a significantly lower frequency than the high-frequency power supplied to the second electrode.
Claim 5
Dependent Claim
59 words
The method of claim 1, in which the second electrode is supplied by one output of a first high-frequency source, with the other output of said first high-frequency source being grounded; and the first electrode is supplied by one output of a second high-frequency source through a capacitance, with the other output of said second high-frequency source being grounded.
Claim 6
Dependent Claim
31 words
The method of claim 4, which includes the further step of electrically isolating both the first and second electrodes from the walls of the chamber prior to supplying said high-frequency power.
Claim 7
Dependent Claim
47 words
The method of claim 1, in which the high-frequency power in support of the plasma is of a first high frequency applied between the second electrode and ground, and the first electrode is grounded via a capacitance chosen to exhibit low impedance to the first high frequency.
Claim 8
Independent Claim
107 words
A method of plasma processing of substrates in a reactor having a pair of spaced electrodes, comprising the steps of: establishing a plasma within the reactor to process a substrate within the reactor and supplying high-frequency power to one electrode in support of said plasma; and simultaneously supplying high-frequency power to the other electrode to clean deposits therefrom, so that processing downtime for electrode cleaning is reduced or eliminated; wherein the high-frequency power supplied to said other electrode to clean deposits is of a significantly lower frequency than the high-frequency power supplied to said one electrode; and wherein the power for cleaning of deposits is increased periodically.
Claim 9
Independent Claim
107 words
A method of plasma processing of substrates in a reactor having a pair of spaced electrodes, comprising the steps of: establishing a plasma within the reactor to process a substrate within the reactor and supplying high-frequency power to one electrode in support of said plasma; and simultaneously supplying high-frequency power to the other electrode to clean deposits therefrom, so that processing downtime for electrode cleaning is reduced or eliminated; wherein the high-frequency power supplied to said other electrode to clean deposits is of a significantly lower frequency than the high-frequency power supplied to said one electrode; and wherein the power for cleaning of deposits is increased periodically.
Claim 10
Dependent Claim
30 words
The method of claim 7, in which the power in support of the plasma is periodically reduced during the times at which the power for cleaning of deposits is increased.
Claim 11
Dependent Claim
161 words
A plasma etch reactor, comprising: a reactor chamber; an upper electrode located in the chamber; a lower electrode spaced apart from the first electrode, for supporting a workpiece to be processed in the reactor chamber; at least one inlet port for supplying process gases to the reactor chamber; at least one outlet port for evacuating gases from the chamber; a high-frequency power source connected between the lower electrode and ground, to generate and sustain a plasma in the reactor chamber; and a second high-frequency power source of much lower power than the first-recited high-frequency power source and a circuit for connecting the second high-frequency power source to the upper electrode while the plasma etch reactor is in normal operation and is receiving power from the first recited high-frequency power source; wherein the second high-frequency power source performs continuous cleaning of the upper electrode during normal operation and periodic additional cleaning may be performed by applying power to the upper electrode only.
Claim 12
Dependent Claim
161 words
A plasma etch reactor, comprising: a reactor chamber; an upper electrode located in the chamber; a lower electrode spaced apart from the first electrode, for supporting a workpiece to be processed in the reactor chamber; at least one inlet port for supplying process gases to the reactor chamber; at least one outlet port for evacuating gases from the chamber; a high-frequency power source connected between the lower electrode and ground, to generate and sustain a plasma in the reactor chamber; and a second high-frequency power source of much lower power than the first-recited high-frequency power source and a circuit for connecting the second high-frequency power source to the upper electrode while the plasma etch reactor is in normal operation and is receiving power from the first recited high-frequency power source; wherein the second high-frequency power source performs continuous cleaning of the upper electrode during normal operation and periodic additional cleaning may be performed by applying power to the upper electrode only.
References Cited (Backward Citations)
JPS6376434A
Cited
JPS63221620A
Cited
US4786392A
Cited
JPS64925A
Cited
JPH01253238A
Cited
US5006192A
Cited
US5259922A
Cited
US5269881A
Cited
US5252178A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-17 | 2008-06-17 | 2008-12-17 | $7700.00 | Window Closed / Lapsed |