Patent US5583369A successfully refreshed from Google Patents.
US5583369A
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US
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Semiconductor device and method for forming the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-03-12
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Granted: 1996-12-10
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Expires: 2016-03-12
Abstract
Abstract Thin-film semiconductor devices such as TFTs (thin-film transistors) and methods of fabricating the same. TFTs are formed on an insulating substrate. First, a substantially amorphous semiconductor coating is formed on the substrate. A protective coating transparent to laser radiation is formed on the semiconductor coating. The laminate is irradiated with laser radiation to improve the crystallinity of the semiconductor coating. Then, the protective coating is removed to expose the surface of the semiconductor coating. A coating for forming a gate-insulating film is formed. Subsequently, gate electrodes are formed. Another method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a first coating consisting mainly of aluminum nitride, a second coating consisting principally of silicon oxide is formed. Semiconductor devices such as TFTs or semiconductor circuits are built on the second coating serving as a base layer.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hongyong Zhang
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:28
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6725; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6758; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10D86/411; H10D86/421; H10D86/471; H10D86/60; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
89 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer formed on said upper surface of the substrate; an insulated gate field effect transistor formed over said upper surface of the substrate with said first blocking layer interposed therebetween, wherein said lower surface of the substrate is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 2
Dependent Claim
89 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer formed on said upper surface of the substrate; an insulated gate field effect transistor formed over said upper surface of the substrate with said first blocking layer interposed therebetween, wherein said lower surface of the substrate is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 3
Dependent Claim
28 words
The semiconductor device of claim 1 further comprising a third blocking layer comprising silicon oxide interposed between said insulated gate field effect transistor and said first blocking layer.
Claim 4
Dependent Claim
30 words
The semiconductor device of claim 2 wherein said insulated gate field effect transistor has a non-single crystalline semiconductor layer as a channel thereof which directly contacts said third blocking layer.
Claim 5
Dependent Claim
83 words
A semiconductor device comprising: a substrate; a first blocking layer formed on a surface of said substrate; a second blocking layer formed on said first blocking layer; and an insulated gate field effect transistor formed on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4, said second blocking layer comprises silicon oxide and said substrate has a blocking layer only on the upper surface of said substrate.
Claim 6
Dependent Claim
83 words
A semiconductor device comprising: a substrate; a first blocking layer formed on a surface of said substrate; a second blocking layer formed on said first blocking layer; and an insulated gate field effect transistor formed on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4, said second blocking layer comprises silicon oxide and said substrate has a blocking layer only on the upper surface of said substrate.
Claim 7
Dependent Claim
80 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 8
Dependent Claim
80 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 9
Dependent Claim
81 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 10
Dependent Claim
81 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 11
Dependent Claim
82 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 12
Dependent Claim
82 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 13
Dependent Claim
82 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 14
Dependent Claim
82 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 15
Dependent Claim
62 words
A semiconductor device comprising: an insulating substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 16
Dependent Claim
62 words
A semiconductor device comprising: an insulating substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 17
Dependent Claim
71 words
A semiconductor device comprising: a soda-lime glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4 and said second blocking layer comprises silicon oxide.
Claim 18
Dependent Claim
71 words
A semiconductor device comprising: a soda-lime glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4 and said second blocking layer comprises silicon oxide.
Claim 19
Dependent Claim
70 words
A semiconductor device comprising: a glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4, and said second blocking layer comprises silicon oxide.
Claim 20
Dependent Claim
70 words
A semiconductor device comprising: a glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4, and said second blocking layer comprises silicon oxide.
Claim 21
Dependent Claim
98 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 22
Dependent Claim
98 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 23
Dependent Claim
101 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4 after nitride.
Claim 24
Dependent Claim
101 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4 after nitride.
Claim 25
Dependent Claim
99 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 26
Dependent Claim
99 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride having an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 27
Dependent Claim
91 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other, a first blocking layer formed on said upper surface of the substrate; an insulating gate field effect transistor formed over said upper surface of the substrate with said first blocking layer interposed therebetween, wherein said lower surface of the substrate is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 28
Dependent Claim
91 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other, a first blocking layer formed on said upper surface of the substrate; an insulating gate field effect transistor formed over said upper surface of the substrate with said first blocking layer interposed therebetween, wherein said lower surface of the substrate is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 29
Dependent Claim
90 words
A Semiconductor device comprising: a substrate; a first blocking layer formed on a surface of said substrate; a second blocking layer formed on said first blocking layer; and all insulated gate field effect transistor formed on said second blocking layer, wherein said first blocking layer comprises aluminum nitride, said second blocking layer comprises silicon oxide and said substrate has a blocking layer only on the upper surface of said substrate, and wherein said first blocking layer contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 30
Dependent Claim
90 words
A Semiconductor device comprising: a substrate; a first blocking layer formed on a surface of said substrate; a second blocking layer formed on said first blocking layer; and all insulated gate field effect transistor formed on said second blocking layer, wherein said first blocking layer comprises aluminum nitride, said second blocking layer comprises silicon oxide and said substrate has a blocking layer only on the upper surface of said substrate, and wherein said first blocking layer contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 31
Dependent Claim
82 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 32
Dependent Claim
82 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and the first and second blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 33
Dependent Claim
83 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and said first and second blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 34
Dependent Claim
83 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, wherein said lower surface is coated with a second blocking layer, and said first and second blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 35
Dependent Claim
84 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 36
Dependent Claim
84 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 37
Dependent Claim
84 words
A semiconductor device comprising; an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 38
Dependent Claim
84 words
A semiconductor device comprising; an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer interposed therebetween, a second blocking layer provided on said lower surface, wherein said second blocking layer and said first blocking layer comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 39
Dependent Claim
64 words
A semiconductor device comprising: an insulating substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride and contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 40
Dependent Claim
64 words
A semiconductor device comprising: an insulating substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride and contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 41
Dependent Claim
77 words
A semiconductor device comprising: a soda-lime glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride and said second blocking layer comprises silicon oxide and said first blocking layer contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 42
Dependent Claim
77 words
A semiconductor device comprising: a soda-lime glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride and said second blocking layer comprises silicon oxide and said first blocking layer contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 43
Dependent Claim
76 words
A semiconductor device comprising: a glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride, and said second blocking layer comprises silicon oxide and said first blocking layer contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 44
Dependent Claim
76 words
A semiconductor device comprising: a glass substrate; a first blocking layer provided on a surface of said substrate; a second blocking layer provided on said first blocking layer; and an insulated gate field effect transistor provided on said second blocking layer, wherein said first blocking layer comprises aluminum nitride, and said second blocking layer comprises silicon oxide and said first blocking layer contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 45
Dependent Claim
100 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 46
Dependent Claim
100 words
A semiconductor device comprising: a substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 47
Dependent Claim
100 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise nitride and contain an element selected form the group consisting of boron, silicon, carbon and oxygen.
Claim 48
Dependent Claim
100 words
A semiconductor device comprising: an insulating substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise nitride and contain an element selected form the group consisting of boron, silicon, carbon and oxygen.
Claim 49
Dependent Claim
101 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 50
Dependent Claim
101 words
A semiconductor device comprising: a glass substrate having an upper surface and a lower surface opposite with each other; a first blocking layer provided on said upper surface; a second blocking layer comprising silicon oxide provided on said first blocking layer; and an insulated gate field effect transistor provided over said upper surface with said first blocking layer and said second blocking layer interposed therebetween, wherein said lower surface is coated with a third blocking layer, and the first and third blocking layers comprise aluminum nitride and contain an element selected from the group consisting of boron, silicon, carbon and oxygen.
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