US4282543A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor substrate and method for the preparation of the same
Assignee: Fujitsu Ltd
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Filing: 1979-11-19
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Granted: 1981-08-04
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Expires: 1999-11-19
Abstract
Abstract An improved semiconductor substrate comprises at least one insulating layer comprising (a) a thin film of amorphous silicon dioxide formed on a base plate comprising single crystal silicon and (b) a thin film of single crystal sapphire superimposed on the silicon dioxide film. A semiconductor substrate may be prepared by forming a first thin film of single crystal sapphire on a base plate comprising single crystal silicon, converting, if desired, the upper surface layer of the silicon base plate into a first thin film of amorphous silicon dioxide by thermal oxidation through the sapphire film, forming a second thin film comprising single crystal silicon on the first sapphire film, forming a second thin film comprising single crystal sapphire on the second silicon film, and then thermally oxidizing the second silicon film through the second sapphire film to form a second film comprising amorphous silicon dioxide.
Inventors
- 👤 Masaru Ihara
- 👤 Masayuki Jifuku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:30
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/698; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/043; Y10S148/118
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
109 words
A semiconductor substrate suitable for a semiconductor device, said substrate comprising a base plate of single crystal silicon, at least one insulating layer located on said base plate, each said insulating layer comprising a lower film comprising amorphous silicon dioxide facing said base plate and an upper film comprising single crystal sapphire located on said amorphous silicon dioxide lower film, said upper film having an epitaxial relation with said base plate, and a layer comprising single crystal silicon on the uppermost one of said at least one upper film, said single crystal silicon layer having an epitaxial relation with said uppermost one of said at least one upper film.
Claim 2
Dependent Claim
109 words
A semiconductor substrate suitable for a semiconductor device, said substrate comprising a base plate of single crystal silicon, at least one insulating layer located on said base plate, each said insulating layer comprising a lower film comprising amorphous silicon dioxide facing said base plate and an upper film comprising single crystal sapphire located on said amorphous silicon dioxide lower film, said upper film having an epitaxial relation with said base plate, and a layer comprising single crystal silicon on the uppermost one of said at least one upper film, said single crystal silicon layer having an epitaxial relation with said uppermost one of said at least one upper film.
Claim 3
Dependent Claim
25 words
The substrate of claim 1 comprising a film of single crystal sapphire located between said base plate and said insulating layer on said base plate.
Claim 4
Dependent Claim
60 words
The substrate of claim 1, wherein said amorphous silicon dioxide lower film of said insulating layer on said base plate comprises an upper surface portion of said silicon base plate, which upper surface portion was converted into a film comprising amorphous silicon dioxide by oxidation through said single crystal sapphire upper film of said insulating layer on said base plate.
Claim 5
Dependent Claim
19 words
The substrate of claim 1, wherein each said insulating layer has a dielectric constant of from 3 to 4.
Claim 6
Dependent Claim
18 words
The substrate of claim 1, wherein each said sapphire film has a thickness of up to 20,000 A.
Claim 7
Dependent Claim
26 words
The substrate of claim 1, wherein at least one of said at least one silicon dioxide films has a thickness of from 1,000 to 20,000 A.
Claim 8
Dependent Claim
23 words
The substrate of claim 1, wherein at least one of said at least one amorphous silicon dioxide lower films has a predetermined pattern.
Claim 9
Dependent Claim
29 words
The substrate of claim 1 comprising a selectively patterned layer of single crystal silicon on the uppermost one of said at least one upper film of single crystal sapphire.
Claim 10
Dependent Claim
22 words
The substrate of claim 8, wherein said selectively patterned layer of single crystal silicon has a thickness between 0.3 to 3.0 microns.
Claim 11
Dependent Claim
29 words
The substrate of claim 1, wherein at least one of said at least one lower films of amorphous silicon dioxide has a dielectric constant of from 3 to 4.
Claim 12
Dependent Claim
27 words
The substrate of claim 1, wherein at least one of said single crystal sapphire films has a dielectric constant in the approximate range from 9 to 10.
Claim 13
Dependent Claim
48 words
The substrate of claim 1, wherein each said upper layer of amorphous silicon dioxide is the result of oxidation of a respective layer of single crystal silicon through a respective upper layer of single crystal sapphire formed on the respective single crystal silicon layer prior to said oxidation.
Claim 14
Dependent Claim
30 words
The substrate of claim 1, said epitaxial relation comprising said base plate, each said sapphire layer, and said layer of silicon crystal silicon having a respective crystal structure and orientation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-03 | 1985-02-02 | 1985-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-03 | 1989-02-02 | 1989-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-03 | 1993-02-02 | 1993-08-04 | $7700.00 | Window Closed / Lapsed |